Abstract: A structure includes a dielectric layer, and a metal line in the dielectric layer. The metal line has a first straight edge and a second straight edge extending in a lengthwise direction of the metal line. The first straight edge and the second straight edge are parallel to each other. A via is underlying and joined to the metal line. The via has a third straight edge underlying and vertically aligned to the first straight edge, and a first curved edge and a second curved edge connecting to opposite ends of the third straight edge.

Abstract: A wearable stimulation device includes a wearable member, a stimulation unit, and a driver. The stimulation unit is secured to the wearable member. The stimulation unit includes an immovable end, a stimulation end, and a power element. The power element is connected between the immovable end and the stimulation end for driving the stimulation end to reciprocate relative to the immovable end. The driver is in signal connection with the power element. The driver is configured to output a vibration signal to the power element for the stimulation end to have a stroke of between 8.8 mm and 10.8 mm, a thrust of between 5.6 N and 7.6 N and a reciprocating frequency of between 180 Hz and 220 Hz, thereby stimulating the deep muscles of the abdomen or waist of a human body without affecting the superficial muscles.

Abstract: In some aspects of the present disclosure, a memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

Abstract: A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.

Abstract: The present invention is directed to a composition comprising rapeseed protein, a hydrocolloid, and a vegetable oil, and to the use of such composition in food products such as a beverage.

Abstract: Methods of forming self-aligned vias and devices having self-aligned vias are provided. In some embodiments, a method includes forming a first via on a conductive layer. A mask is formed over the conductive layer, and the mask has an opening overlying a portion of the conductive layer and at least partially overlying the first via. A first line end of the conductive layer is formed by selectively removing the portion of the conductive layer, with the first via being aligned with the first line end of the conductive layer.

Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.

Abstract: A cell activation reactor and a cell activation method are provided. The cell activation reactor includes a body, a rotating part, an upper cover, a microporous film, and multiple baffles. The body has an accommodating space, which is suitable for accommodating multiple cells and multiple magnetic beads. The rotating part is disposed in the accommodating space and includes multiple impellers. The microporous film is disposed in the accommodating space and covers multiple holes of the accommodating space. The baffles are disposed in the body. When the rotating part is driven to rotate, the interaction between the baffles and the impellers separates the cells and the magnetic beads.

Abstract: A portable electronic device including a first body, a second body, a hinge mechanism, a control unit, a sensor unit, a sterilization module, and a shielding module, is provided. The first body has a first inner surface. The second body has a second inner surface. The hinge mechanism is connected between the first body and the second body. The control unit is disposed in the first body or the second body. The sensor unit is disposed in the first body or the second body and coupled to the control unit. The sterilization module is disposed at the hinge mechanism and coupled to the control unit, the sterilization module is configured to generate light for sterilization and disinfection. The shielding module is disposed on the hinge mechanism and the shielding module can move relative to the hinge mechanism.

Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.

Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.

Abstract: An industrial image inspection method includes: generating a test latent vector of a test image; measuring a distance between a training latent vector of a normal image and the test latent vector of the test image; and judging whether the test image is normal or defected according to the distance between the training latent vector of the normal image and the test latent vector of the test image.

Abstract: The current disclosure includes a plasma etching system that includes a movable plasma source and a moveable wafer stage. A relative position between the movable plasma source and the movable wafer stage can be varied to set up an angle along which plasma particles of the plasma hits a wafer positioned on the wafer stage.

Abstract: A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.

Abstract: A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer.

Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.

Abstract: A small area real-time air pollution assessment system includes a databank, a model generation module, an input module and an analysis module. In a small area real-time air pollution assessment method, the model generation module generates a model by analyzing historical tested persons' historical body characteristics data and historical air data in a plurality of monitored areas, which storing in a databank; inputs from an input module to the model a plurality of current tested persons' body characteristics data in a to-be-monitored area to generate air data corresponding to the current tested persons; selects a specified value of each of those air data and converts the specified values into air quality index values; selects a specific value of those air quality index values; and compares the specific value with an air quality health assessment table to generate assessment results. Thus, relatively accurate small area air pollution assessment results can obtainable.

Abstract: A paper material and a flexible packaging material using the same are provided. At least one surface of the paper material is coated with a first coating layer and a second coating layer. The paper has an air permeability greater than 45200 sec and a dyne value less than 40 dyn/cm. The first coating layer includes an inorganic filler and a first water-based heat-sealable coating, and the first water-based heat-sealable coating includes a polyolefin dispersion, an ethylene acrylic acid copolymer, or a styrene acrylate emulsion. The second coating layer includes an inorganic filler and a second water-based heat-sealable coating, and the second water-based heat-sealable coating includes a polyolefin dispersion, an ethylene acrylic acid copolymer, a styrene acrylate emulsion, or polyvinyl alcohol.

Abstract: A coating composition and a paper material are provided. The coating composition has water resistance and oil resistance, and includes 100 parts by weight of acrylic resin and 25 to 200 parts by weight of clay. An aspect ratio of the clay is greater than 20.