Abstract: A controlling method for a wireless communication device is provided. The controlling method for the wireless communication device includes: attaching a first Universal Subscriber Identity Module (USIM) to a Long-Term Evolution (LTE) network; determining whether a second USIM is camped on the LTE network; detecting whether a paging collision is happened, if the second USIM is camped on the LTE network; generating a requested International Mobile Subscriber Identity (IMSI) offset for the second USIM, if the paging collision is happened, wherein the requested IMSI offset is 1 or min(T, nB)?1, T is a default paging period and nB is a number of paging occurrences within the default paging period; transmitting an attach request with the requested IMSI offset to the LTE network for the second USIM; receiving a negotiated IMSI offset from the LTE network; and attaching the second USIM to the LTE network with the negotiated IMSI offset.

Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.

Abstract: The present technology can include a semiconductor device assembly comprising an RDL with a top surface and a side surface intersecting the top surface. The assembly can further comprise a semiconductor device coupled to the top surfaces, and a mold material encasing the semiconductor device (when included) and directly coupled to at least a portion of the top surface and the side surface of the RDL. In other embodiments, the assembly can comprise an RDL with a top surface, a bottom surface opposite thereto, and a sloped side surface extending between the top surface and the bottom surface. The assembly similarly can further comprise a semiconductor device coupled to the top surface, and a mold material encasing the semiconductor device and directly coupled to at least a portion of the top surface and the side surface of the RDL.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A display panel includes a first substrate, pixel structures, a first common pad, a second substrate, a second common electrode, a display medium and a conductive particle. The pixel structures are disposed on an active area of the first substrate. The first common pad is disposed on a peripheral area of the first substrate, and is electrically connected to first common electrodes of the pixel structures. The second common electrode is disposed on the second substrate. The conductive particle is disposed on the first common pad, and is electrically connected to the first common pad and the second common electrode. The conductive particle includes a core and a conductive film disposed on a surface of the core, where the conductive film has a main portion and raised portions, and a film thickness of each of the raised portions is greater than a film thickness of the main portion.

Abstract: A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends of the channel layer; a ferroelectric layer, lying between the gate electrode and the channel layer; and a first insertion layer, extending in between the ferroelectric layer and the channel layer, and comprising a metal carbonitride or a metal nitride.

Abstract: A luminous panel includes a circuit board, a plurality of connecting pads, a chip and two alignment structures. The connecting pads are located on the circuit board. The chip is located on the circuit board and at least partially covers the connecting pads. The two alignment structures are located on the circuit board. The two alignment structures and the connecting pads are at the same level. The two alignment structures are located at two diagonal corners of the chip. At least one part of the two alignment structures protrudes from the outline of the chip.

Abstract: A display panel includes a plurality of sub-pixel structures and a plurality of transfer elements. The sub-pixel structures include a plurality of first sub-pixel structures. A data line of each of the first sub-pixel structures is disposed adjacent to a corresponding transfer element, and a scan line of each of the first sub-pixel structures is electrically connected to the corresponding transfer element. The first sub-pixel structures include a plurality of first-type sub-pixel structures and a plurality of second-type sub-pixel structures. When the display panel displays a grayscale picture, each of the first-type sub-pixel structures has first brightness, each of the second-type sub-pixel structures has second brightness. The first brightness is less than the second brightness. A total number of the first sub-pixel structures of the display panel is A, a number of the first-type sub-pixel structures in the first sub-pixel structures is a, and 50%<(a/A)<100%.

Abstract: A method of forming a semiconductor device is provided. A gate electrode is formed within an insulating layer that overlies a substrate. A gate dielectric layer is formed over the gate electrode. A first oxide semiconductor layer is formed over the gate dielectric layer. A dielectric layer is formed over the first oxide semiconductor layer. The dielectric layer and the first oxide semiconductor layer are patterned, so as to form first and second openings that expose portions of the gate dielectric layer. An interfacial layer is conformally formed on sidewalls and bottoms of the first and second openings. A second oxide semiconductor layer is formed over the interfacial layer in the first and second openings. A metal layer is formed over the second oxide semiconductor layer in the first and second openings.

Abstract: The present invention includes a needle connected to a urine container; a side of the needle is connected to the urine container, and the other side is a blunt end; a holder is mounted on a base, and the urine container is detachably mounted on the holder; a camera unit is mounted on the base, aiming at the blunt end; a light source is mounted on the base, emitting a detection beam; a processor unit is electrically connected to the camera unit; wherein when a sample urine in the urine container drips through the needle and forms a drop of urine, the detection beam passes through the drop of urine and travels into the camera unit; the processor unit receives an image of the drop of urine through the camera unit, and the processor unit instantly calculates a protein concentration of the drop of urine from the image.

Abstract: Disclosed herein is a method for alleviating depression, which includes administering to a subject in need thereof a composition containing TNFAIP3-interacting protein (TNIP) 1. The composition is administered to the CA3 region of the subject's hippocampus.

Abstract: A blind spot detection system with speed detection function and device and method thereof are provided. The system is disposed on the rear portion of the vehicle, and includes a signal transceiving module and a central processing unit. The central processing unit includes a speed calculation module and an object detection module. The device includes a main body in which the signal transceiving module is disposed. A first signal is sent toward a detection area behind the vehicle for acquiring a second signal for blind spot detection. By calculation based on the second signal, a third signal is acquired for identifying the static and moving objects, and the relative speed between the vehicle and the static object is determined as the speed of the vehicle. Therefore, the blind spot detection system has a speed detection function.

Abstract: A pixel array substrate includes data lines, first gate lines, pixel structures, first common lines, and conductive line sets. The conductive line sets are arranged in a first direction. Each of the conductive line sets includes first conductive line groups and a second conductive line group sequentially arranged in the first direction. Each of the first conductive line groups includes second gate lines and a second common line. The second conductive line group includes first auxiliary lines and a second common line. An arrangement order of the second gate lines and the second common line of each of the first conductive line groups in the first direction are the same as an arrangement order of the first auxiliary lines and the second common line of the second conductive line group in the first direction, respectively.

Abstract: A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a reference layer, a tunnel barrier layer disposed over the reference layer, a free layer disposed over the tunnel barrier layer, and a diffusion barrier layer disposed over the free layer. The MTJ element in accordance with the present disclosure exhibits a low resistance desired for a low-power write operation, and a high TMR coefficient desired for a low bit-error-rate (BER) read operation.

Abstract: A pixel array substrate, including scanning line pads, data line pads, scanning lines, data lines, gate transmission lines, pixels, a data line signal chip, and a scanning line signal chip, is provided. The scanning lines extend along a first direction. The data lines and the gate transmission lines extend along a second direction. The data lines are electrically connected to the data line pads. The scanning lines are electrically connected to the scanning line pads through the gate transmission lines. A ratio of a number of rows of pixels arranged in the first direction to a number of rows of pixels arranged in the second direction is X:Y. Each pixel includes m sub-pixels.

Abstract: A display device comprising a plurality of ordinary pixels, an auxiliary pixel, a frame and a driving chip is provided. The auxiliary pixel includes a plurality of first color sub-pixels. The frame is configured to define an active area in a non-rectangular shape. The plurality of ordinary pixels and the auxiliary pixel are arranged in the active area. The driving chip is configured to receive display data, wherein the display data includes a first color grayscale value configured to assign first target luminance of first color light of the auxiliary pixel. The driving chip is configured to generate one or more processed first color grayscale values configured to assign the luminance of the plurality of first color sub-pixels, according to the first color grayscale value, and the sum of the luminance of the plurality of first color sub-pixels is substantially equal to the first target luminance.

Abstract: A semiconductor device includes a substrate, a gate electrode, a gate dielectric layer, a channel layer, a source electrode and a drain electrode. The gate electrode is disposed over the substrate. The gate dielectric layer is disposed over the gate electrode. The channel layer is disposed over the gate dielectric layer. The source electrode and the drain electrode are disposed over the channel layer and beside the gate electrode. In some embodiments, each of the source electrode and the drain electrode includes a glue layer and a metal pattern, and a thickness of the glue layer adjacent to a sidewall of the metal pattern is greater than a thickness of the glue layer adjacent to a bottom of the metal pattern.

Abstract: A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a reference layer, a tunnel barrier layer disposed over the reference layer, a free layer disposed over the tunnel barrier layer, and a diffusion barrier layer disposed over the free layer. The MU element in accordance with the present disclosure exhibits a low resistance desired for a low-power write operation, and a high TIM coefficient desired for a low bit-error-rate (BER) read operation.

Abstract: Provided is a scooter radar detection system for a scooter, including: a control module for controlling operation of the scooter radar detection system; two detection radars flanking a license plate, facing the rear of the scooter, and being in signal connection with the control module; two flash alert units disposed at rear-view mirrors on two sides of the scooter, respectively, and being in signal connection with the control module; and a vibration alert module disposed below a seat and being in signal connection with the control module.

Abstract: An electronic device includes a substrate, multiple transversal signal lines, a first vertical signal line, a second vertical signal line, a shielding wire, and multiple pixel structures. The first vertical signal line is intersected with the transversal signal lines. The second vertical signal line is intersected with the transversal signal lines and connected to one of the transversal signal lines. An orthogonal projection of the shielding wire on the substrate is located between an orthogonal projection of the first vertical signal line and an orthogonal projection of the second vertical signal line on the substrate. One of the pixel structures is surrounded by a corresponding one of the transversal signal lines and the second vertical signal line and includes an active device. A gate and a source of the active device is electrically connected to the corresponding one transversal signal line and the first vertical signal line respectively.