Abstract: A light-emitting diode (LED) chip is provided. The LED chip includes a first semiconductor layer, a second semiconductor layer, a first electrode electrically connected with the first semiconductor layer, and a second electrode electrically connected with the second semiconductor layer. The first electrode is in an annular shape and surrounds the second electrode. The first electrode and the second electrode cooperate to define a first channel therebetween. The first channel is in an annular shape. The first electrode defines at least one second channel therein. The at least one second channel extends through an inner side and an outer side of the first electrode and communicates with the first channel. A communication between the first channel and the second channel facilitates solder volatiles during soldering the LED chip, and potential short circuits can be further avoided. A display panel and an electronic device are further provided.

Abstract: A method for micro-LED epitaxial wafer manufacturing and a micro-LED epitaxial wafer are provided. The method includes the following. For each growth region of a micro-LED chip on a growth substrate, photoresist is applied to the growth region. For each growth region, an epitaxial isolation wall is grown at a boundary of the growth region. For each growth region, the photoresist on the growth substrate is removed with the epitaxial isolation wall remained. For each growth region, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer are grown in the growth region to obtain a micro-LED epitaxial structure. The growth substrate is cut along the epitaxial isolation wall, to obtain at least two micro-LED epitaxial structures.

Abstract: A light emitting diode (LED) chip and a method for manufacturing an LED chip are provided. The LED chip includes a sapphire layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a P electrode, and an N electrode. The N-type semiconductor layer, the light emitting layer, the P-type semiconductor layer, the P electrode are sequentially disposed on a surface of the sapphire layer. The sapphire layer defines multiple preset patterns which extend through the sapphire layer, and the multiple preset patterns are used for reflecting a light of a preset wavelength through a channel defined by the sapphire layer.

Abstract: Systems and methods are provided for generating samples of network traffic and characterizing the samples to easily identify exploits. A first embodiment of the present disclosure can generate traffic between a sample generator and the target computing device based on a particular exploit. The traffic can be a plurality of samples of the exploit using an exploit script. The method can provide for collecting and storing the plurality of samples. These samples can then be used to characterize the exploit by identifying invariant portions and variable portions of the samples. The method can further provide for removing any artifacts from the samples. Regular expressions can be constructed based on the samples. Each regular expression can be tested and ranked according to metrics of efficiency and accuracy.

Abstract: Systems and methods are provided for generating samples of network traffic and characterizing the samples to easily identify exploits. A first embodiment of the present disclosure can generate traffic between a sample generator and the target computing device based on a particular exploit. The traffic can be a plurality of samples of the exploit using an exploit script. The method can provide for collecting and storing the plurality of samples. These samples can then be used to characterize the exploit by identifying invariant portions and variable portions of the samples. The method can further provide for removing any artifacts from the samples. Regular expressions can be constructed based on the samples. Each regular expression can be tested and ranked according to metrics of efficiency and accuracy.

Abstract: An electronic device includes a flexible substrate and a conductive wire. The flexible substrate includes a first bending region and a side region connected to the first bending region. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. A ratio of a total width of the metal portion disposed in the first bending region to a total width of the metal portion disposed in the side region is in a range from 0.8 to 1.2, and a length of one of the openings in the first bending region is less than or equal to a length of one of the openings in the side region.

Abstract: An electronic device includes a top carrier having a first top surface and a first bottom surface, a first electronic element formed on the first top surface, a second electronic element formed on the first bottom surface, a bottom carrier below the top carrier and having a second top surface near the top carrier, and a controller formed on the second top surface.

Abstract: An electronic device includes a top carrier having a first top surface and a first bottom surface, a first electronic element formed on the first top surface, a second electronic element formed on the first bottom surface, a bottom carrier below the top carrier and having a second top surface near the top carrier, and a controller formed on the second top surface.

Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Abstract: An epitaxial wafer as a light emitting diode (LED) comprises a sapphire substrate, a buffer layer, an N-type semiconductor layer, a light emitting active layer, and a P type semiconductor layer. The buffer layer, the N-type semiconductor layer, the light emitting active layer, and the P type semiconductor layer are formed on C-plane of the sapphire substrate in that order. The light-emitting active layer comprises at least one quantum well structure, with a quantum well region, a gradient region, a high-content aluminum region, and a blocking region. The blocking region covers and is connected to the high-content aluminum region, the P-type semiconductor layer of aluminum-doped or indium-doped gallium nitride covers the gradient region. Content of aluminum or indium changes linearly from side close to the N-type semiconductor layer to side furthest from the N-type semiconductor layer.

Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Abstract: Systems and methods are provided for generating samples of network traffic and characterizing the samples to easily identify exploits. A first embodiment of the present disclosure can generate traffic between a sample generator and the target computing device based on a particular exploit. The traffic can be a plurality of samples of the exploit using an exploit script. The method can provide for collecting and storing the plurality of samples. These samples can then be used to characterize the exploit by identifying invariant portions and variable portions of the samples. The method can further provide for removing any artifacts from the samples. Regular expressions can be constructed based on the samples. Each regular expression can be tested and ranked according to metrics of efficiency and accuracy.

Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.

Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.

Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.

Abstract: A display device including a first common electrode, an active device array substrate, a display medium layer and a power system is provided. The active device array substrate includes a plurality of scan lines, a plurality of data lines, a plurality of transistors, a plurality of pixel electrodes and a second common electrode. Each of the transistors is electrically connected to one scan line and one data line, and the pixel electrodes are electrically connected to the transistors, respectively. The second common electrode and the pixel electrodes form a plurality of storage capacitors. The display medium layer is disposed between the first common electrode and the active device array substrate. The power system is electrically connected to the first common electrode and the second common electrode through two separated conductive routes, respectively. A reset method of a display device is also provided.