Abstract: A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure.

Abstract: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 ?m to 2.5 ?m.

Abstract: An LED epitaxial structure includes a substrate, a buffer layer, a functional layer and a light generating layer. The buffer layer is located on a top surface of the substrate. The functional layer includes a plurality of high-temperature epitaxial layers and low-temperature epitaxial layers alternatively arranged between the buffer layer and light generating layer. A textured structure is formed in the low-temperature epitaxial layer. A SiO2 layer including a plurality of convexes is located on the textured structure to increase light extraction efficiency of the LED epitaxial structure. A manufacturing method of the LED epitaxial structure is also disclosed.

Abstract: A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.

Abstract: An LED light bar comprises a housing, a circuit board with a plurality of separated portions located on the housing, a plurality of LED package devices disposed on the circuit board and electrically connecting to the circuit board, and a plurality of power dispensers respectively electrically connecting to the separated portions of the circuit board. The plurality of LED package devices is divided into a plurality of groups respectively on the plurality of separated portions of the circuit board, wherein the plurality of LED package devices of each of the groups forms a closed loop. Each separated portion of the circuit board includes a metal layer on the housing, an insulating layer on the metal layer and a circuit layer on the insulating layer. Each group of the LED package devices is on a corresponding circuit layer.

Abstract: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

Abstract: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

Abstract: An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the bottom of the recess. The encapsulating layer is in the recess and covers the LED die. The LED package further includes a metal layer formed on the second surface and the lateral surface of the substrate. A pair of electrodes is located at the bottom of the recess and extends through the metal layer. An insulated material is filled between the transparent substrate and the electrodes. Light emitted from the LED die is transmitted through the transparent substrate and reflected by the metal layer.

Abstract: A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer.

Abstract: An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer.

Abstract: An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent ele

Abstract: A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure.

Abstract: A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.

Abstract: An epitaxial structure of a light emitting diode (LED) includes a substrate, an epitaxial layer, and a light capturing microstructure. The substrate has a top surface. The epitaxial layer is grown on the top surface of the substrate and has a P-type semiconductor layer, an active layer, and an N-type semiconductor layer in sequence. The light capturing microstructure is positioned on an upper portion of the epitaxial layer which is distant from the substrate. A manufacturing method of an epitaxial structure of an LED is also disclosed. The light capturing microstructure includes at least a concave and an insulating material filled in the at least a concave.

Abstract: An LED module includes an LED and a light-guiding board. The light-guiding board includes a light-incident face facing the LED, a light-emergent face, a light-reflecting face opposite to the light-emergent face, and a light-converting layer containing phosphors therein. Light emitted from the LED sequentially moves the light-incident face, the light-converting layer and the light-emergent face to leave the light-guiding board. The light-converting layer has a uniform thickness.

Abstract: An instant message monitoring and controlling system includes an instant message monitoring and controlling module, a user operation interface and a bluetooth module. The instant message monitoring and controlling module is used for monitoring and controlling plural instant message tools. The user operation interface is used for defining a bluetooth device therevia. The bluetooth module automatically searches the pairing codes required for connection with the bluetooth device. When the instant message monitoring and controlling module receives data from the instant message tools, one of the instant message tools is communicated with the bluetooth device.

Abstract: A semiconductor package includes a substrate, a number of electrodes formed in the substrate, a heat dissipating member fixed on the substrate, and at least one semiconductor chip mounted on the heat dissipating member and electrically connected to the electrodes. The heat dissipating member defines a receiving through hole and includes a conducting portion formed at the bottom of the receiving through hole. The at least one semiconductor chip is mounted on the conducting portion. The conducting portion efficiently conducts the heat generated by the semiconductor chip to the heat dissipating member and improves the heat dissipating efficiency of the semiconductor package.

Abstract: An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the bottom of the recess. The encapsulating layer is in the recess and covers the LED die. The LED package further includes a metal layer formed on the second surface and the lateral surface of the substrate. A pair of electrodes is located at the bottom of the recess and extends through the metal layer. An insulated material is filled between the transparent substrate and the electrodes. Light emitted from the LED die is transmitted through the transparent substrate and reflected by the metal layer.

Abstract: An instant message monitoring and controlling system includes an instant message monitoring and controlling module, a user operation interface and a bluetooth module. The instant message monitoring and controlling module is used for monitoring and controlling plural instant message tools. The user operation interface is used for defining a bluetooth device therevia. The bluetooth module automatically searches the pairing codes required for connection with the bluetooth device. When the instant message monitoring and controlling module receives data from the instant message tools, one of the instant message tools is communicated with the bluetooth device.