Patents by Inventor Yajun Wei
Yajun Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11963519Abstract: The present disclosure provides a kit and method for constructing a long-acting depression animal model. The present disclosure adopts Bacille Calmette-Guerin (BCG) (or Mycobacterium bovis (M bovis)) and low-dose pertussis toxin (PTX) for combined induction, which greatly reduces modeling cost. A mouse model constructed by the method of the present disclosure can clearly distinguish a time interval of pathological behaviors from a time interval of depression-like behaviors and has prominent face validity and predictive validity. The method of the present disclosure is simple and convenient and does not require a large number of tedious daily operations as the depression model construction by chronic unpredictable stress, chronic restraint stress, social defeat, mother-child separation, or the like. The mouse model of the present disclosure can provide a valuable long-term intervention window for research on antidepressant therapy.Type: GrantFiled: August 25, 2022Date of Patent: April 23, 2024Assignee: Northwest Institute of Plateau Biology, CASInventors: Cen Li, Hongxia Yang, Jing Zhao, Lixin Wei, Yuzhi Du, Yuancan Xiao, Hongtao Bi, Zhanjuan Chen, Yajun Qiao, Jianv Wang
-
Patent number: 11587971Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.Type: GrantFiled: March 9, 2021Date of Patent: February 21, 2023Assignee: L3HARRIS CINCINNATI ELECTRONICS CORPORATIONInventors: Steven Allen, Michael Garter, Robert Jones, Joseph Meiners, Yajun Wei, Darrel Endres
-
Patent number: 11515353Abstract: Multicolor, stacked detector devices, focal plane arrays including multicolor, stacked detector devices, and methods of fabricating the same are disclosed. In one embodiment, a stacked multicolor detector device includes a first detector and a second detector. The first detector includes a first detector structure and a first ground plane adjacent the first detector structure. The second detector includes a second detector structure and a second ground plane adjacent the second detector structure. At least one of the first ground plane and the second ground plane is transmissive to radiation in a predetermined spectral band. The first detector and the second detector are in a stacked relationship.Type: GrantFiled: September 11, 2020Date of Patent: November 29, 2022Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventors: Daniel Chmielewski, Yajun Wei, Nansheng Tang, Darrel Endres, Michael Garter, Mark Greiner
-
Patent number: 11411040Abstract: Methods of fabricating multicolor, stacked detector devices and focal plane arrays are disclosed. In one embodiment, a method of fabricating a stacked multicolor device includes forming a first detector by depositing a first detector structure on a first detector substrate, and depositing a first ground plane on the first detector structure, wherein the first ground plane is transmissive to radiation in a predetermined spectral band. The method further includes bonding an optical carrier wafer to the first ground plane, removing the first detector substrate, and forming a second detector. The second detector is formed by depositing a second detector structure on a second detector substrate, and depositing a second ground plane on the second detector structure. The method further includes depositing a dielectric layer on one of the first detector structure and the second ground plane, bonding the first detector to the second detector, and removing the second detector substrate.Type: GrantFiled: September 11, 2020Date of Patent: August 9, 2022Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventors: Yajun Wei, Daniel Chmielewski, Nansheng Tang, Darrel Endres, Michael Garter, Mark Greiner
-
Publication number: 20210217790Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.Type: ApplicationFiled: March 9, 2021Publication date: July 15, 2021Applicant: L3 Cincinnati Electronics CorporationInventors: Steven ALLEN, Michael GARTER, Robert JONES, Joseph MEINERS, Yajun WEI, Darrel ENDRES
-
Patent number: 10978508Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.Type: GrantFiled: October 16, 2019Date of Patent: April 13, 2021Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventors: Steven Allen, Michael Garter, Robert Jones, Joseph Meiners, Yajun Wei, Darrel Endres
-
Publication number: 20210082991Abstract: Multicolor, stacked detector devices, focal plane arrays including multicolor, stacked detector devices, and methods of fabricating the same are disclosed. In one embodiment, a stacked multicolor detector device includes a first detector and a second detector. The first detector includes a first detector structure and a first ground plane adjacent the first detector structure. The second detector includes a second detector structure and a second ground plane adjacent the second detector structure. At least one of the first ground plane and the second ground plane is transmissive to radiation in a predetermined spectral band. The first detector and the second detector are in a stacked relationship.Type: ApplicationFiled: September 11, 2020Publication date: March 18, 2021Applicant: L3 CINCINNATI ELECTRONICS CORPORATIONInventors: Daniel Chmielewski, Yajun Wei, Nansheng Tang, Darrel Endres, Michael Garter, Mark Greiner
-
Publication number: 20210082992Abstract: Methods of fabricating multicolor, stacked detector devices and focal plane arrays are disclosed. In one embodiment, a method of fabricating a stacked multicolor device includes forming a first detector by depositing a first detector structure on a first detector substrate, and depositing a first ground plane on the first detector structure, wherein the first ground plane is transmissive to radiation in a predetermined spectral band. The method further includes bonding an optical carrier wafer to the first ground plane, removing the first detector substrate, and forming a second detector. The second detector is formed by depositing a second detector structure on a second detector substrate, and depositing a second ground plane on the second detector structure. The method further includes depositing a dielectric layer on one of the first detector structure and the second ground plane, bonding the first detector to the second detector, and removing the second detector substrate.Type: ApplicationFiled: September 11, 2020Publication date: March 18, 2021Applicant: L3 CINCINNATI ELECTRONICS CORPORATIONInventors: Yajun Wei, Daniel Chmielewski, Nansheng Tang, Darrel Endres, Michael Garter, Mark Greiner
-
Patent number: 10886325Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength in a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: GrantFiled: May 4, 2018Date of Patent: January 5, 2021Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres, Robert Jones
-
Patent number: 10714531Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength in a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: GrantFiled: May 4, 2018Date of Patent: July 14, 2020Assignee: L3 Cincinnati Electronics CorporationInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres
-
Publication number: 20200119063Abstract: A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.Type: ApplicationFiled: October 16, 2019Publication date: April 16, 2020Inventors: Steven ALLEN, Michael GARTER, Robert JONES, Joseph MEINERS, Yajun WEI, Darrel ENDRES
-
Patent number: 10170675Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.Type: GrantFiled: July 29, 2017Date of Patent: January 1, 2019Assignee: LUMILEDS LLCInventors: Jipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiaffino, Daniel Alexander Steigerwald
-
Patent number: 10170653Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.Type: GrantFiled: November 9, 2017Date of Patent: January 1, 2019Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventor: Yajun Wei
-
Patent number: 10121922Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.Type: GrantFiled: November 9, 2017Date of Patent: November 6, 2018Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventor: Yajun Wei
-
Patent number: 10121921Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.Type: GrantFiled: December 8, 2016Date of Patent: November 6, 2018Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventor: Yajun Wei
-
Publication number: 20180294309Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength is a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: ApplicationFiled: May 4, 2018Publication date: October 11, 2018Applicant: L3 Cincinnati Electronics CorporationInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres
-
Publication number: 20180294301Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength is a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: ApplicationFiled: May 4, 2018Publication date: October 11, 2018Applicant: L3 Cincinnati Electronics CorporationInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres, Robert Jones
-
Publication number: 20180076345Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.Type: ApplicationFiled: November 9, 2017Publication date: March 15, 2018Applicant: L-3 Communications Cincinnati Electronics CorporationInventor: Yajun Wei
-
Publication number: 20180069140Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.Type: ApplicationFiled: November 9, 2017Publication date: March 8, 2018Applicant: L-3 Communications Cincinnati Electronics CorporationInventor: Yajun Wei
-
Patent number: 9887307Abstract: Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.Type: GrantFiled: October 26, 2016Date of Patent: February 6, 2018Assignee: L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATIONInventor: Yajun Wei