Patents by Inventor Yakub Aliyu

Yakub Aliyu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to fabricate a robust and reliable memory device
    Patent number: 6277691
    Abstract: A new method of forming non-volatile memory cells that prevents ion implantation induced damage in the manufacture of an integrated circuit device has been achieved. A tunneling dielectric layer is formed overlying a semiconductor substrate. A first polysilicon layer is deposited. The first polysilicon layer and the tunneling dielectric layer are patterned to form floating gates. An interpoly dielectric layer is deposited. A second polysilicon layer is deposited. The second polysilicon layer and the interpoly dielectric layer are patterned to form control gates overlying said floating gates. A masking layer is deposited overlying the control gates and the semiconductor substrate. The photoresist layer is patterned to form implantation openings in the masking layer for planned heavily doped junctions and to form isolated rings of the masking layer surrounding the implantation openings.
    Type: Grant
    Filed: April 4, 2000
    Date of Patent: August 21, 2001
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Ngo Dinh Quoc, Yakub Aliyu
  • Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes
    Patent number: 6261955
    Abstract: An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
    Type: Grant
    Filed: July 18, 2000
    Date of Patent: July 17, 2001
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Yakub Aliyu, Simon Chooi, Mei Sheng Zhou, John Leonard Sudijono, Subhash Gupta, Sudipto Ranendra Roy, Paul Kwok Keung Ho, Yi Xu
  • Method for forming silicon carbide chrome thin-film resistor
    Patent number: 6211032
    Abstract: A method for forming a thin-film resistor, which is composed of silicon, carbon, and chromium, is disclosed. The resistivity of the thin-film resistor, and therefore the resistance and temperature coefficient of resistance (TCR) of the resistor, are tailored to have specific values by varying the elemental composition of the silicon, carbon, and chromium used to form the resistor.
    Type: Grant
    Filed: November 6, 1998
    Date of Patent: April 3, 2001
    Assignee: National Semiconductor Corporation
    Inventors: Mark Redford, Yakub Aliyu, Chic McGregor, Rikki Boyle, Haydn Gregory
  • Silicon carbide chrome thin-film resistor
    Patent number: 6081014
    Abstract: A thin-film resistor is formed from silicon, carbon, and chromium. The resistivity of the thin-film resistor, and therefore the resistance and temperature coefficient of resistance (TCR) of the resistor, are tailored to have specific values by varying the elemental composition of the silicon, carbon, and chromium used to form the resistor.
    Type: Grant
    Filed: November 6, 1998
    Date of Patent: June 27, 2000
    Assignee: National Semiconductor Corporation
    Inventors: Mark Redford, Rikki Boyle, Yakub Aliyu, Chic McGregor, Haydn Gregory