Abstract: A method for forming a silicon-on-insulator transistor (80) includes forming an active region (82) overlying an insulating layer (122), wherein a portion of the active region provides an intrinsic body region (126). A body tie access region (128) is also formed within the active region, overlying the insulating layer and laterally disposed adjacent the intrinsic body region, making electrical contact to the intrinsic body region. A gate electrode (134) is formed overlying the intrinsic body region for providing electrical control of the intrinsic body region, the gate electrode extending over a portion (137) of the body tie access region. The gate electrode is formed having a substantially constant gate length (88) along its entire width overlying the intrinsic body region and the body tie access region to minimize parasitic capacitance and gate electrode leakage. First and second current electrodes (98,100) are formed adjacent opposite sides of the intrinsic body region.

Abstract: A double gate semiconductor device (2006) is used beneficially as a multiplier (2000). The double gate semiconductor device (2006) has a lateral fin (105) as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure (2106) with alternating source/drain terminals (2120, 2122, 2124, 2126) in which the sources are connected together and the drains are connected together. Gates (2116, 2110) are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier (2000) may also be used as a mixer and further as a phase detector.

Abstract: An integrated circuit capacitor (60) uses multiple electrically conductive stacks (63-68, 70) to optimize capacitance density. A second stack (70) is a first nearest neighbor to a first stack (66). A third stack (65) is a second nearest neighbor to the first stack. Each of the three stacks defines vertices of an isosceles triangle (20) formed in a plane substantially perpendicular to the three stacks. The isosceles triangle does not have a ninety degree angle. The isosceles triangle may also be implemented as an equilateral triangle.

Abstract: A real time webpage editing system with auxiliary pattern and the method therefor are disclosed. The user uses a browser to connect to the disclosed system through a network. With the assistance of web page templates that allow users to make adjustments and the what-you-see-is-what-you-get (WYSIWYG) interface, the user is able to edit the web page contents in real time. The edited web page is then dynamically processed and stored by the system.

Abstract: A website system and method with dynamic maintaining function are disclosed. The user uses a browser to connect with the disclosed system through a network. The tree structure is employed to present the website structure in the browser. The web page editing is displayed in the what-you-see-is-what-you-get (WYSIWYG) fashion, so that the user can perform dynamic editing on the website contents. The disclosed further perform real-time processing, storage, and transmissions.

Abstract: A semiconductor device (20) includes an isolated p-well (22) formed in a substrate (21) by a buried n-well (25) and an n-well ring (24). The n-well ring (24) extends from a surface of the semiconductor device (20) to the buried n-well (25). The isolated p-well (22) includes a plurality of n-well plugs (27) extending from the surface of the semiconductor device (20) into the isolated p-well (22) and contacting the buried n-well (25). The plurality of n-well plugs (27) reduces an n-well resistance to provide better noise isolation for high frequency signals.

Abstract: A semiconductor device (20) includes an isolated p-well (22) formed in a substrate (21) by a buried n-well (25) and an n-well ring (24). The n-well ring (24) extends from a surface of the semiconductor device (20) to the buried n-well (25). The isolated p-well (22) includes a plurality of n-well plugs (27) extending from the surface of the semiconductor device (20) into the isolated p-well (22) and contacting the buried n-well (25). The plurality of n-well plugs (27) reduces an n-well resistance to provide better noise isolation for high frequency signals.