Abstract: Provided is an artificial reef, including a bottom plate, a reef main body of a hollow structure and connected to the bottom plate, and a pipe rack arranged in the reef main body. Two ends of the reef main body are open. All sides of the reef main body are obliquely arranged from bottom to top towards an inner side. The pipe rack is formed by assembling multiple pipe bodies into a grid shape. The pipe bodies are in communication with each other at intersections. Both ends of each pipe body extend through and are fixed to two sides of the reef main body respectively to communicate with the outside. The bottom plate and the reef main body are made of a reinforced concrete structure, and the reinforced concrete structure is made of high corrosion-resistant steel bars and modified seawater and sea sand concrete.

Abstract: The present disclosure provides an electronic device for wireless communication, comprising a processing circuit configured to set, according to report information of the channel quality between a user equipment and the electronic device and between the user equipment and a neighboring electronic device adjacent to the electronic device reported by the user equipment within the service range thereof, the following indication information comprised in information corresponding to a resource block in relative narrowband transmission power (RNTP) signaling to be sent to neighboring electronic devices, wherein the indication information is used for indicating the degree that the user equipment of the electronic device scheduled on the resource block is interfered by the neighboring electronic device.

Abstract: A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base; forming a pattern memory layer on the base, where at least a first trench and a second trench are provided on the pattern memory layer, where an extending direction of the first trench is parallel to an extending direction of the second trench, and the first trench and the second trench are formed using different masks; and forming mandrel lines separated on the base at positions of the base that correspond to the first trench and the second trench. By using the method, a problem that a photoresist peels off during etching due to an elongated shape when separated mandrel lines are directly formed can be avoided. Further, a problem of a relatively high requirement on a filling material when the mandrel lines are formed directly by using a plurality of photolithography processes can be avoided, to lower the requirement on the filling material.

Abstract: The present application provides techniques for virtual live streaming. The techniques comprise loading at least two virtual images in a current live streaming room in response to a request for adding the at least two virtual images; generating a unique identifier corresponding to each of the at least two virtual images while loading each of the at least two virtual images; obtaining motion capture data indicative of motions to be applied in the current live streaming room; and performing virtual live streaming in the current live streaming room based on the at least two virtual images and the motion capture data.

Abstract: A multi-tool (100) includes a power head (120) including a power head housing (122) having a handle (124) operably coupled thereto, a tool attachment (106, 108, 110) configured to perform a work function, the tool attachment (106, 108, 110) being alternately separable from and operably coupled to the power head (120), a motor (140) disposed in the power head housing (122), a battery (130) configured to be operably coupled to the motor (140) to selectively power the motor (140), a drive provider portion (300) disposed at the power head (120), and a drive receiver portion (320) disposed at the tool attachment (106, 108, 110). The drive provider portion (300) includes a driving portion (302) of a shaft (150) operably coupled to the motor (140), and the drive receiver portion (320) includes a driven portion (322) of the shaft (150). The driving portion (302), the drive receiver portion (320), and the motor (140) share a common axis (148).

Abstract: The invention discloses a corrosion resistant coating for marine engineering concrete and a preparation method thereof, the corrosion resistant coating being sprayed or brushed on the concrete surface after being uniformly mixed by component A and component B,wherein the component A is calculated by weight including: waterborne non-ionic epoxy resin, C10-C12 alkyl glycidyl ether, polyhedral oligomeric silsesquioxane, metal powder, magnesium aluminum hydrotalcite powder,dispersant,defoamer; and the component B is calculated by weight including: modified aromatic amine curing agent, C10-C12 alkyl glycidyl ether, self-healing micro capsules, leveling agent, antioxidant, adhesion promoter, and other additives.

Abstract: A preparation method for a corrosion-resistant coating of a reinforcing steel for marine concrete, comprising the steps: (1) pretreating the surface of a reinforcing steel; (2) preparing self-repairing corrosion microcapsules; (3) preparing a cathodic electrophoresis coating; (4) carrying out cathodic electrophoresis; and (5) curing. The electrophoresis coating of the present invention contains the self-repairing corrosion microcapsules, metal powder, and graphene oxide powder. The corrosion resistance of the coating is improved under the co-action of the self-repairing properties of the self-repairing microcapsules and cathodic protection. The corrosion-resistant coating has excellent adhesion and corrosion resistance, prolonging the service life of reinforcing steel. It is widely used for the protection of reinforcing steels for marine concrete, and also for the protection of metal structures in general environment.

Abstract: A battery-powered tool (200) may include a first tool-side electrical contact (251), a battery detection switch (220), a tool load (300), and a load connection switching device (210). The load connection switching device (210) may be configured to make an electrical connection between the first tool-side electrical contact (251) and the tool load (300) in response to a state change of the battery detection switch (220). The tool (200) may define engagement positions with the battery (110). In the first engagement position, a first battery-side electrical contact (111) is electrically coupled to a first tool-side electrical contact (251), and the battery detection switch (220) is not physically engaged. In the second engagement position, the first battery-side electrical contact (111) is electrically coupled to the tool-side electrical contact (251), and the battery detection switch (220) is physically engaged to cause a state change of the battery detection switch (220).

Abstract: A multi-tool (100) includes a power head (120) including a power head housing (122) having a handle (124) operably coupled thereto, a tool attachment (106, 108, 110) configured to perform a work function, the tool attachment (106, 108, 110) being alternately separable from and operably coupled to the power head (120), a motor (140) disposed in the power head housing (122), a battery (130) configured to be operably coupled to the motor (140) to selectively power the motor (140), a power head mating interface (121) including structures disposed at the power head (120) for defining a physical mating assembly, a drive power transfer assembly and an electronic assembly, and a tool mating interface (123) including structures disposed at a housing of the tool attachment (106, 108, 110) for defining the physical mating assembly, the drive power transfer assembly and the electronic assembly.

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes: providing a base, a pattern transfer material layer being formed above the base; performing first ion implantation, to dope first ions into the pattern transfer material layer, to form first doped mask layers arranged in a first direction; forming first trenches in the pattern transfer material layer on two sides of the first doped mask layer in a second direction, to expose side walls of the first doped mask layer; forming mask spacers on side walls of the first trenches; performing second ion implantation, to dope second ions into some regions of the pattern transfer material layer that are exposed from the first doped mask layers and the first trenches, to form second doped mask layers; removing the remaining pattern transfer material layer, to form second trenches; and etching the base along the first trenches and the second trenches, to form a target pattern.

Abstract: The present disclosure provides a semiconductor structure and a forming method thereof. One form of a forming method includes: providing a base; forming a plurality of discrete mandrel layers on the base, where an extending direction of the mandrel layers is a first direction, and a direction perpendicular to the first direction is a second direction; forming a plurality of spacer layers covering side walls of the mandrel layers; forming a pattern transfer layer on the base, where the pattern transfer layer covers side walls of the spacer layers; forming a first trench in the pattern transfer layer between adjacent spacer layers in the second direction; removing a mandrel layer to form a second trench after the first trench is formed; and etching the base along the first trench and the second trench to form a target pattern by using the pattern transfer layer and the spacer layer as a mask. In the present disclosure, the accuracy of the pattern transfer is improved.

Abstract: A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base; forming a pattern memory layer on the base, where at least a first trench and a second trench are provided on the pattern memory layer, where an extending direction of the first trench is parallel to an extending direction of the second trench, and the first trench and the second trench are formed using different masks; and forming mandrel lines separated on the base at positions of the base that correspond to the first trench and the second trench. By using the method, a problem that a photoresist peels off during etching due to an elongated shape when separated mandrel lines are directly formed can be avoided. Further, a problem of a relatively high requirement on a filling material when the mandrel lines are formed directly by using a plurality of photolithography processes can be avoided, to lower the requirement on the filling material.

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes: providing a base, a pattern transfer material layer being formed above the base; performing first ion implantation, to dope first ions into the pattern transfer material layer, to form first doped mask layers arranged in a first direction; forming first trenches in the pattern transfer material layer on two sides of the first doped mask layer in a second direction, to expose side walls of the first doped mask layer; forming mask spacers on side walls of the first trenches; performing second ion implantation, to dope second ions into some regions of the pattern transfer material layer that are exposed from the first doped mask layers and the first trenches, to form second doped mask layers; removing the remaining pattern transfer material layer, to form second trenches; and etching the base along the first trenches and the second trenches, to form a target pattern.

Abstract: The present disclosure provides a semiconductor structure and a forming method thereof. One form of a forming method includes: providing a base; forming a plurality of discrete mandrel layers on the base, where an extending direction of the mandrel layers is a first direction, and a direction perpendicular to the first direction is a second direction; forming a plurality of spacer layers covering side walls of the mandrel layers; forming a pattern transfer layer on the base, where the pattern transfer layer covers side walls of the spacer layers; forming a first trench in the pattern transfer layer between adjacent spacer layers in the second direction; removing a mandrel layer to form a second trench after the first trench is formed; and etching the base along the first trench and the second trench to form a target pattern by using the pattern transfer layer and the spacer layer as a mask. In the present disclosure, the accuracy of the pattern transfer is improved.

Abstract: According to an embodiment, a lithium ion battery includes an anode having an active material, a conductive additive, and a binder including carboxymethyl cellulose, styrene-butadiene rubber, and magnesium-alginate at a ratio of 1.5:1.5:1 such that the specific capacity of the anode is 350 mAh/g to 365 mAh/g and an internal resistance of the anode is 65 m? to 75 m?. The lithium ion battery further includes a cathode, and a separator between the anode and cathode.

Abstract: A semiconductor structure and a forming method thereof are disclosed. The forming method includes: providing a base; forming a first electrode layer on the base; forming a capacitance dielectric layer on a top and a sidewall of the first electrode layer; and forming a second electrode layer conformally covering the capacitance dielectric layer. Compared with a solution in which the capacitance dielectric layer only covers the top of the first electrode layer, in the present disclosure, an effective area between the second electrode layer and the first electrode layer is increased, the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the top of the first electrode layer construct one capacitance, and the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the sidewall of the first electrode layer construct other four capacitances. That is, the formed capacitor structure includes five parallel capacitances.

Abstract: According to an embodiment, a lithium ion battery includes an anode having an active material, a conductive additive, and a binder including carboxymethyl cellulose, styrene-butadiene rubber, and magnesium-alginate at a ratio of 1.5:1.5:1 such that the specific capacity of the anode is 350 mAh/g to 365 mAh/g and an internal resistance of the anode is 65 m? to 75 m?. The lithium ion battery further includes a cathode, and a separator between the anode and cathode.

Abstract: A battery-powered tool (200) may include a first tool-side electrical contact (251), a battery detection switch (220), a tool load (300), and a load connection switching device (210). The load connection switching device (210) may be configured to make an electrical connection between the first tool-side electrical contact (251) and the tool load (300) in response to a state change of the battery detection switch (220). The tool (200) may define engagement positions with the battery (110). In the first engagement position, a first battery-side electrical contact (111) is electrically coupled to a first tool-side electrical contact (251), and the battery detection switch (220) is not physically engaged. In the second engagement position, the first battery-side electrical contact (111) is electrically coupled to the tool-side electrical contact (251), and the battery detection switch (220) is physically engaged to cause a state change of the battery detection switch (220).

Abstract: A semiconductor structure and a forming method thereof are disclosed. The forming method includes: providing a base; forming a first electrode layer on the base; forming a capacitance dielectric layer on a top and a sidewall of the first electrode layer; and forming a second electrode layer conformally covering the capacitance dielectric layer. Compared with a solution in which the capacitance dielectric layer only covers the top of the first electrode layer, in the present disclosure, an effective area between the second electrode layer and the first electrode layer is increased, the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the top of the first electrode layer construct one capacitance, and the second electrode layer, the first electrode layer, and the capacitance dielectric layer located on the sidewall of the first electrode layer construct other four capacitances. That is, the formed capacitor structure includes five parallel capacitances.