Abstract: A non-spectral computed tomography scanner includes a radiation source configured to emit x-ray radiation, a detector array configured to detect x-ray radiation and generate non-spectral data, and a memory configured to store a spectral image module that includes computer executable instructions including a neural network trained to produce spectral volumetric image data. The neural network is trained with training spectral volumetric image data and training non-spectral data. The non-spectral computed tomography scanner further includes a processor configured to process the non-spectral data with the trained neural network to produce spectral volumetric image data.

Abstract: A graphene modifying method of metal having following steps of providing metal powders, graphene powders and a binder, the metal powder has metal particles, and the graphene powder has graphene micro pieces, each graphene micro piece is formed by 6-atom unit cells connected with each other, each 6-atom unit cell is connected to a stearic acid functional group by a sp3 bond; mixing the metal powder, the graphene powder, and the binder to generate heat by a friction, each sp3 bond connected with the stearic acid functional group is thereby heated and broken, each 6-atom unit cell is connected with other 6-atom unit cells via the broken sp3 bond, and the metal particles are thereby wrapped by the 6-atom unit cells; and sintering the metal particles into a metal body to transform the plurality of graphene micro pieces into a three-dimensional mash embedded in the metal body.

Abstract: Exemplary sample processing methods are described that include providing an initial sample to a sample processing system. The sample processing system includes a light-emitting-diode, a temperature control unit, and a fluid supply unit. The methods also include irradiating the initial sample with light emitted from the light-emitting-diode to produce an irradiated sample. The methods may still further include adjusting a temperature of the irradiated sample with the temperature control unit to between 0° C. and 60° C., and contacting the irradiated sample with a fluid from the fluid supply unit. The irradiated sample has a reduction in auto-fluorescence of greater than or about 50% compared to the initial sample. Exemplary sample processing systems are also described that include a light-emitting-diode, a temperature control unit, and a fluid supply unit.

Abstract: A battery-powered tool (200) may include a first tool-side electrical contact (251), a battery detection switch (220), a tool load (300), and a load connection switching device (210). The load connection switching device (210) may be configured to make an electrical connection between the first tool-side electrical contact (251) and the tool load (300) in response to a state change of the battery detection switch (220). The tool (200) may define engagement positions with the battery (110). In the first engagement position, a first battery-side electrical contact (111) is electrically coupled to a first tool-side electrical contact (251), and the battery detection switch (220) is not physically engaged. In the second engagement position, the first battery-side electrical contact (111) is electrically coupled to the tool-side electrical contact (251), and the battery detection switch (220) is physically engaged to cause a state change of the battery detection switch (220).

Abstract: In a multi-session imaging study, information from a previous imaging session is stored in a Binary Large Object (BLOB). Current emission imaging data are reconstructed into a non-attenuation corrected (NAC) current emission image. A spatial transform is generated aligning a previous NAC emission image from the BLOB to the current NAC emission image. A previous computed tomography (CT) image from the BLOB is warped using the spatial transform, and the current emission imaging data are reconstructed with attenuation correction using the warped CT image. Alternatively, low dose current emission imaging data and a current CT image are acquired, a spatial transform is generated aligning the previous CT image to the current CT image, a previous attenuation corrected (AC) emission image from the BLOB is warped using the spatial transform, and the current emission imaging data are reconstructed using the current CT image with the warped AC emission image as prior.

Abstract: Emission imaging data are reconstructed to generate a low dose reconstructed image. Standardized uptake value (SUV) conversion (30) is applied to convert the low dose reconstructed image to a low dose SUV image. A neural network (46, 48) is applied to the low dose SUV image to generate an estimated full dose SUV image. Prior to applying the neural network the low dose reconstructed image or the low dose SUV image is filtered using a low pass filter (32). The neural network is trained on a set of training low dose SUV images and corresponding training full dose SUV images to transform the training low dose SUV images to match the corresponding training full dose SUV images, using a loss function having a mean square error loss component (34) and a loss component (36) that penalizes loss of image texture and/or a loss component (38) that promotes edge preservation.

Abstract: A multi-tool (100) includes a power head (120) including a power head housing (122) having a handle (124) operably coupled thereto, a tool attachment (106, 108, 110) configured to perform a work function, the tool attachment (106, 108, 110) being alternately separable from and operably coupled to the power head (120), a motor (140) disposed in the power head housing (122), a battery (130) configured to be operably coupled to the motor (140) to selectively power the motor (140), a power head mating interface (121) including structures disposed at the power head (120) for defining a physical mating assembly, a drive power transfer assembly and an electronic assembly, and a tool mating interface (123) including structures disposed at a housing of the tool attachment (106, 108, 110) for defining the physical mating assembly, the drive power transfer assembly and the electronic assembly.

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes: providing a base, a pattern transfer material layer being formed above the base; performing first ion implantation, to dope first ions into the pattern transfer material layer, to form first doped mask layers arranged in a first direction; forming first trenches in the pattern transfer material layer on two sides of the first doped mask layer in a second direction, to expose side walls of the first doped mask layer; forming mask spacers on side walls of the first trenches; performing second ion implantation, to dope second ions into some regions of the pattern transfer material layer that are exposed from the first doped mask layers and the first trenches, to form second doped mask layers; removing the remaining pattern transfer material layer, to form second trenches; and etching the base along the first trenches and the second trenches, to form a target pattern.

Abstract: A non-spectral computed tomography scanner (102) includes a radiation source (112) configured to emit x-ray radiation, a detector array (114) configured to detect x-ray radiation and generate non-spectral data, and a memory (134) configured to store a spectral image module (130) that includes computer executable instructions including a neural network trained to produce spectral volumetric image data. The neural network is trained with training spectral volumetric image data and training non-spectral data. The non-spectral computed tomography scanner further includes a processor (126) configured to process the non-spectral data with the trained neural network to produce spectral volumetric image data.

Abstract: A sprayer includes: a container; a passage including a transparent window, a first opening, a second opening and a resonator, wherein when liquid in the container is passed through the resonator via the first opening, the liquid is emitted as a gas via the second opening; and a removable detection unit disposed outside of the passage. The removable detection unit includes: a light source for illuminating the gas in the passage; an optical sensor disposed to detect a parameter of light reflected by the gas; and a processor coupled to the optical sensor for stopping the resonator from generating the gas when the parameter is below a threshold. The passage further includes a cavity disposed on a bottom surface of the passage in front of the optical sensor, wherein when the gas in the passage contacts the bottom surface, resultant water vapour will enter the cavity.

Abstract: The present disclosure provides a semiconductor structure and a forming method thereof. One form of a forming method includes: providing a base; forming a plurality of discrete mandrel layers on the base, where an extending direction of the mandrel layers is a first direction, and a direction perpendicular to the first direction is a second direction; forming a plurality of spacer layers covering side walls of the mandrel layers; forming a pattern transfer layer on the base, where the pattern transfer layer covers side walls of the spacer layers; forming a first trench in the pattern transfer layer between adjacent spacer layers in the second direction; removing a mandrel layer to form a second trench after the first trench is formed; and etching the base along the first trench and the second trench to form a target pattern by using the pattern transfer layer and the spacer layer as a mask. In the present disclosure, the accuracy of the pattern transfer is improved.

Abstract: The invention provides a manufacturing method for a multi-layer ceramic capacitor. the method includes: providing a plastic film; coating a layer of ceramic slurry on a side of the plastic film; coating a layer of copper paste on the layer of ceramic slurry to form a raw material, wherein the copper paste includes a copper powder and a graphene powder; and sintering the raw material at a temperature equal to or higher than 800° C. to sinter the layer of ceramic slurry into a ceramic dielectric layer and the copper paste into a copper electrode layer. The copper atoms are restricted by the graphene so that the copper atoms are confined in layer arrangement to improve flatness of copper atoms in the copper electrode layer.

Abstract: A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base; forming a pattern memory layer on the base, where at least a first trench and a second trench are provided on the pattern memory layer, where an extending direction of the first trench is parallel to an extending direction of the second trench, and the first trench and the second trench are formed using different masks; and forming mandrel lines separated on the base at positions of the base that correspond to the first trench and the second trench. By using the method, a problem that a photoresist peels off during etching due to an elongated shape when separated mandrel lines are directly formed can be avoided. Further, a problem of a relatively high requirement on a filling material when the mandrel lines are formed directly by using a plurality of photolithography processes can be avoided, to lower the requirement on the filling material.

Abstract: A method and system for guided power grid augmentation determines a minimum resistance path for cells within an integrated circuit (IC) design. The minimum resistance path traces a conducting wire connecting a pin of a cell to an IC tap within the IC design. A voltage drop value for each of the cells is determined so as to identify target cells having a voltage drop value that satisfies a voltage drop criteria. Polygons have defined size characteristics are defined around the minimum resistance paths of the target cells, and conductors, such as additional conductors, are generated within the defined polygons.

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes: providing a base, a pattern transfer material layer being formed above the base; performing first ion implantation, to dope first ions into the pattern transfer material layer, to form first doped mask layers arranged in a first direction; forming first trenches in the pattern transfer material layer on two sides of the first doped mask layer in a second direction, to expose side walls of the first doped mask layer; forming mask spacers on side walls of the first trenches; performing second ion implantation, to dope second ions into some regions of the pattern transfer material layer that are exposed from the first doped mask layers and the first trenches, to form second doped mask layers; removing the remaining pattern transfer material layer, to form second trenches; and etching the base along the first trenches and the second trenches, to form a target pattern.

Abstract: The present disclosure provides a semiconductor structure and a forming method thereof. One form of a forming method includes: providing a base; forming a plurality of discrete mandrel layers on the base, where an extending direction of the mandrel layers is a first direction, and a direction perpendicular to the first direction is a second direction; forming a plurality of spacer layers covering side walls of the mandrel layers; forming a pattern transfer layer on the base, where the pattern transfer layer covers side walls of the spacer layers; forming a first trench in the pattern transfer layer between adjacent spacer layers in the second direction; removing a mandrel layer to form a second trench after the first trench is formed; and etching the base along the first trench and the second trench to form a target pattern by using the pattern transfer layer and the spacer layer as a mask. In the present disclosure, the accuracy of the pattern transfer is improved.

Abstract: A non-transitory computer-readable medium storing instructions readable and executable by a workstation (18) including at least one electronic processor (20) to perform a quality control (QC) method (100). The method includes: receiving a current QC data set acquired by a pixelated detector (14) and one or more prior QC data sets acquired by the pixelated detector; determining stability levels of detector pixels (16) of the pixelated detector over time from the current QC data set and the one or more prior QC data sets; labeling a detector pixel of the pixelated detector as dead when the stability level determined for the detector pixel is outside of a stability threshold range; and displaying, on a display device (24) operatively connected with the workstation, an identification (28) of the detector pixels labelled as dead.

Abstract: A method of manufacturing graphene polyester chips including steps of: melt-mixing a polymer material and graphene powder having a mass fraction ?2 wt %, and melt-mixing a tackifier with a mass fraction between 1 wt % and 3 wt %, a toughener with a mass fraction between 1 wt % and 3 wt %, and a dispersant with a mass fraction between 1 wt % and 4 wt % sequentially. Finally, a molten raw material is made into a plurality of graphene polyester chips each in form of short cylindrical particle. The present disclosure further includes a method of manufacturing graphene diaphragm.

Abstract: A method for manufacturing a graphene plastic film includes the steps of providing plastic particles and graphene powder, mixing the plastic particles with the graphene powder in a weight ratio not greater than 2% to form a mixed material, heating the mixed material to form a melted material (100), pressing the melted material (100) to form a graphene plastic sheet (210), and radially stretching a periphery of the graphene plastic sheet (210) to expand and thin the graphene plastic sheet (210) to form a graphene plastic film (220). By adding graphene to the mixed material, physical properties of the graphene plastic film (220) can be enhanced. In comparison with the current technology, it is easier to be manufactured and wider to be applied.

Abstract: A graphene modifying method of metal having following steps of providing metal powders, graphene powders and a binder, the metal powder has metal particles, and the graphene powder has graphene micro pieces, each graphene micro piece is formed by graphene molecules connected with each other, each graphene molecule is connected to a stearic acid functional group by a sp3 bond; mixing the metal powder, the graphene powder and the binder to generate heat by a friction, each sp3 bond connected with the stearic acid functional group is thereby heated and broken, each graphene molecule is connected with other graphene molecules via the broken sp3 bond, and the metal particles are thereby wrapped by the graphene molecules; and sintering the metal particles into a metal body to transform the graphene molecules into a three-dimensional mash embedded in the metal body.