Abstract: A vertical high-speed testing device for a spiral seal of a cone bit bearing is provided. The device includes an upper fixed plate, a liquid cylinder, a cone, a spiral sleeve, a shaft and a lower fixed plate. The spiral sleeve is in threaded connection to the cone. Both the cone and the spiral sleeve are sheathed on the shaft. Sealing threads are provided on an inner surface of the spiral sleeve, and there is a clearance between the sealing threads and the shaft. By the testing device, a spiral seal structure for a cone bit bearing is simulated, and the cone drives the spiral sleeve to rotate; and the sand draining performance of the spiral seal is tested by measuring the time required to drain sand-containing medium.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the first sub-dielectric layer. The thin film transistor almost has no current hysteresis.

Abstract: A method of making nano-scaled channel, the method including: locating a first photoresist layer, a nanowire structure, and a second photoresist layer on a surface of a substrate, and the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises an nanowire; forming an opening in the first photoresist layer and the second photoresist layer to expose a portion of the surface of the substrate to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening, and both ends of the nanowire are sandwiched between the first photoresist layer and the second photoresist layer; and depositing a thin film layer on the exposed surface of the substrate using the a nanowire as a mask, wherein the thin film layer defines a nano-scaled channel corresponding to the at least one nanowire.

Abstract: A method of making a thin film transistor, the method including: providing an insulating layer on a semiconductor substrate, forming a semiconductor layer on the insulating layer; locating a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, wherein the nanowire structure comprises a nanowire; forming an opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed in the opening; depositing a conductive film layer on the exposed surface of the semiconductor layer, wherein the conductive film layer defines a nano-scaled channel corresponding to the nanowire, and the conductive film layer is divided into two regions by the nano-scaled channel, one region is used as a source electrode, and the other region is used as a drain electrode; forming a gate electrode on the semiconductor substrate.

Abstract: A horizontal high-speed testing device for a spiral seal of a cone bit bearing is provided. The device comprises a shaft, a spiral sleeve and a cone. The spiral sleeve is in threaded connection to the cone. Sealing threads are provided on an inner diameter of the spiral sleeve. Both the spiral sleeve and the cone are sheathed on the shaft. By the testing device of the present invention, a spiral seal structure for a cone bit bearing is simulated, and the cone drives the spiral sleeve to rotate; the sand draining performance of the spiral seal can be tested in two ways, i.e., by measuring the time required to drain the sand-containing liquid and by measuring the weight of drained sand, so that the smooth production and application of spiral seal products can be assured.

Abstract: A method for producing formaldehyde from methanol. The method includes the steps of packing a catalyst comprising platinum, bismuth and a support material into a reactor, introducing a reactant mixture containing methanol into the reactor such that the reactant mixture containing methanol is in close contact with the catalyst, and heating the reactant mixture containing methanol to a temperature for a period of time.

Abstract: A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.

Abstract: A method of making a thin film transistor, the method includes: providing a semiconductor layer; arranging a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, wherein the nanowire structure includes a single nanowire; forming one opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening; depositing a conductive film layer on the exposed surface using the nanowire structure as a mask, wherein the conductive film layer defines a nano-scaled channel, and the conductive film layer is divided into two regions, one region is used as a source electrode, and the other region is used as a drain electrode; forming an insulating layer on the semiconductor layer to cover the source electrode and the drain electrode, and locating a gate electrode on the insulating layer.

Abstract: A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

Abstract: The present invention discloses a device for measuring adsorption/desorption of contaminants onto surface bed sediments and a method of using the device. The measurement device includes a sediment sample disc, a sample holder, a reaction cylinder, a liquid collection cylinder, and a liquid circulating member from inside to outside, the liquid circulating member consisting of rubber pipes and a peristaltic pump.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.

Abstract: A method for producing formaldehyde from methanol. The method includes the steps of packing a catalyst comprising platinum, bismuth and a support material into a reactor, introducing a reactant mixture containing methanol into the reactor such that the reactant mixture containing methanol is in close contact with the catalyst, and heating the reactant mixture containing methanol to a temperature for a period of time.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes a n-type thin film transistor and a p-type thin film transistor. Each thin film transistor includes a substrate; a semiconductor layer including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The n-type thin film transistor and the p-type thin film transistor share the same substrate and the same gate.

Abstract: The present invention provides a hinge of a mobile terminal with a flexible screen. The outer side of the hinge supports the flexible screen. The hinge comprises a main support body, a first bracket and a second bracket rotatably connected to a rotating shaft of the hinge, a first support body and a second support body respectively slidably connected to the first bracket and the second bracket, and a synchronous control mechanism. An auxiliary support body is separately provided between the first support body and the main support body and between the second support body and the main support body. The auxiliary support body is correspondingly located at a bend portion of the hinge in a closed state. The hinge is further provided with a first guide structure rotating around the rotating shaft of the hinge together with the first bracket and a second guide structure rotating around the rotating shaft of the hinge together with the second bracket.

Abstract: The method provided in the embodiments of this application includes: obtaining, by a server, a first key (Ksm) shared with a gateway; receiving, by the server, an encrypted first random factor (Rand-M-Encry), a first data digest (Data-Hash), and encrypted first data (Data-Encry) that are sent by a terminal; decrypting, by the server, the Rand-M-Encry by using the Ksm, to obtain a second random factor (Rand-M?); performing, by the server, an operation on the Rand-M? and Kpsa-xi by using a second preset algorithm, to generate a third key (K?sx); decrypting, by the server, the Data-Encry by using the K?sx, to obtain second data (Data?); performing, by the server, an operation on the K?sx and the Data? based on a first preset algorithm to obtain a second data digest (Data-Hash?); and if the Data-Hash? is the same as the Data-Hash, determining, by the server, that authentication of the terminal succeeds.

Abstract: A method of making a thin film transistor, the method including: forming a gate insulating layer on a gate electrode; placing a semiconductor layer on the gate insulating layer; locating a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises one nanowire; forming one opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed in the opening; depositing a conductive film layer on the exposed surface of the semiconductor layer, wherein the conductive film layer defines a nano-scaled channel corresponding to the nanowire, the conductive film layer is divided into two regions, one region is used as a source electrode, the other region is used as a drain electrode.

Abstract: A method for producing hydrocarbons from glycerol. The method includes packing a catalyst comprising a noble metal and a support material into a reactor, introducing a reactant mixture containing glycerol into the reactor such that the reactant mixture containing methane is in close contact with the reactant mixture, and heating the reactant mixture containing glycerol to a temperature for a contact time.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.