Patents by Inventor Yangyin Chen

Yangyin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • VACANCY-MODULATED CONDUCTIVE OXIDE RESISTIVE RAM DEVICE INCLUDING AN INTERFACIAL OXYGEN SOURCE LAYER
    Publication number: 20170221559
    Abstract: A vacancy-modulated conductive oxide (VMCO) resistive random access memory (ReRAM) device includes at least one interfacial layer between a semiconductor portion and a titanium oxide portion of a resistive memory element. The at least one interfacial layer includes an oxygen reservoir that can store oxygen atoms during operation of the resistive memory element. The at least one interfacial layer can include an interfacial metal oxide layer, a metal layer, and optionally, a ruthenium layer.
    Type: Application
    Filed: August 4, 2016
    Publication date: August 3, 2017
    Inventors: Yangyin Chen, Christopher J. Petti, Kun Hou