Abstract: A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO3 on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

Abstract: A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.

Abstract: A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.

Abstract: A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.

Abstract: A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

Abstract: The invention provides a ferroelectric storage apparatus which can reduce or prevent disturbance, a driving method therefor, and a driving circuit therefor. In the ferroelectric storage apparatus, an operation step of applying one of data reading, data re-writing, and data writing to at least one selected cell among a plurality of ferroelectric memory cells formed at the intersections of a plurality of word lines and a plurality of bit lines is repeatedly performed. A disturbance prevention step of applying a voltage to each of the plurality of ferroelectric memory cells in an electric-field direction in which the stored data of each ferroelectric memory cell is not inverted is performed after the operation step is executed at least once. With this, a voltage is applied to not-selected cells at a certain frequency in an electric-field direction in which the stored data of the not-selected cells is not inverted, and data deterioration is reduced or suppressed.

Abstract: A method of manufacturing a ferroelectric memory of the present invention includes applying pulsed laser light 70 to a ferroelectric capacitor 105 from above the ferroelectric capacitor in a state in which at least the ferroelectric capacitor 105 is formed over a substrate 10.

Abstract: A ferroelectric storage apparatus which can prevent disturbance, a driving method therefor, and a driving circuit therefor are provided. In the ferroelectric storage apparatus, an operation step of applying one of data reading, data re-writing, and data writing to at least one selected cell 18a among a plurality of ferroelectric memory cells 18 formed at the intersections of a plurality of word lines 14 and a plurality of bit lines 16 is repeatedly performed. A disturbance prevention step of applying a voltage to each of the plurality of ferroelectric memory cells 18 in an electric-field direction in which the stored data of each ferroelectric memory cell 18 is not inverted is performed after the operation step is executed at least once. With this, a voltage is applied to not selected cells 18b at a certain frequency in an electric-field direction in which they stored data of the not-selected cells is not inverted, and data deterioration is suppressed.

Abstract: A ferroelectric memory capable of multi-value memory retention is provided with hardly modifying a circuit of the related art. The period for which a write pulse is applied changes depending upon a value to be stored, so that multi-value storage is attained. Only one voltage is prepared for the write pulse, and a reset or read pulse and the write pulse have the same voltage, thus achieving a ferroelectric memory having a multi-value storage function using only one voltage source.