Patents by Inventor Yasuaki Hamada

Yasuaki Hamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110216131
    Abstract: There are provided a piezoelectric element comprising a first electrode, a piezoelectric layer and a second electrode, the piezoelectric layer is made of a piezoelectric material that contains a bismuth ferrite and silicon dioxide.
    Type: Application
    Filed: March 1, 2011
    Publication date: September 8, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Yasuaki Hamada
  • Publication number: 20110216130
    Abstract: A piezoelectric element having a piezoelectric layer and electrodes. The piezoelectric layer is 3 ?M or less in thickness. The piezoelectric layer is made of a piezoelectric material containing a perovskite compound including bismuth manganate ferrate and barium titanate. The piezoelectric layer is preferentially oriented with the (110) plane. The position (2?) of the X-ray diffraction peak attributed to the (110) plane is 31.80° or more and 32.00° or less.
    Type: Application
    Filed: March 1, 2011
    Publication date: September 8, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Yasuaki HAMADA
  • Publication number: 20110216133
    Abstract: A piezoelectric element having a piezoelectric layer and electrodes. The piezoelectric layer is 3 ?m or less in thickness. The piezoelectric layer is made of a piezoelectric material containing a perovskite compound including bismuth manganate ferrate and barium titanate. The piezoelectric layer is preferentially oriented with the (110) plane. A full width at half maximum of the X-ray diffraction peak attributed to the (110) plane is 0.24° or more and 0.
    Type: Application
    Filed: March 1, 2011
    Publication date: September 8, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Yasuaki HAMADA
  • Publication number: 20110216134
    Abstract: A liquid ejection head including a piezoelectric element having a piezoelectric layer and electrodes The piezoelectric layer is 3 ?m or less in thickness. The piezoelectric layer is made of a piezoelectric material including bismuth manganate ferrate and barium titanate. The piezoelectric layer is preferentially oriented with the (110) plane.
    Type: Application
    Filed: March 1, 2011
    Publication date: September 8, 2011
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Yasuaki HAMADA
  • Patent number: 7778060
    Abstract: A ferroelectric memory includes: a memory cell having a ferroelectric capacitor, wherein, in a read-out operation, a first signal Q1 is given when a first voltage is applied to the ferroelectric capacitor, and a second signal Q2 is given when a second voltage having an identical magnitude as a magnitude of the first voltage in a different polarity is applied to the ferroelectric capacitor, and a judgment is made that the memory cell stores first data when Q1/Q2 is greater than ½, and second data when Q1/Q2 is smaller than ½.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: August 17, 2010
    Assignee: Seiko Epson Corporation
    Inventor: Yasuaki Hamada
  • Patent number: 7713348
    Abstract: A precursor composition including a precursor for forming a ferroelectric, the ferroelectric being shown by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, an element C including at least one of Nb and Ta, the precursor including at least the element B and the element C and part of the precursor including an ester bond, the precursor being dissolved or dispersed in an organic solvent, and the organic solvent including at least a first alcohol and a second alcohol having a boiling point and viscosity higher than a boiling point and viscosity of the first alcohol.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: May 11, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Takeshi Kijima, Setsuya Iwashita, Yasuaki Hamada
  • Patent number: 7710004
    Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: May 4, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Koji Ohashi, Setsuya Iwashita, Takeshi Kijima, Yasuaki Hamada
  • Patent number: 7646073
    Abstract: A ferroelectric capacitor includes: a base substrate; a buffer layer formed above the base substrate; a lower electrode formed above the buffer layer; a ferroelectric layer formed above the lower electrode; and an upper electrode formed above the ferroelectric layer, wherein the buffer layer includes titanium (Ti) and cobalt (Co) as metal elements, and a metal element ratio x is 0.05?x<1, when Ti:Co=1?x:x.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: January 12, 2010
    Assignee: Seiko Epson Corporation
    Inventor: Yasuaki Hamada
  • Publication number: 20090246360
    Abstract: An oxide source material solution for forming an oxide film having a composition expressed by PbuZrxTi1-x-yMyO3 is presented. A composition of metal element constituents in the oxide source material solution is expressed by [Pb]:([Zr]+[Ti]+[M])=v:1, and a difference (v?u) in composition ratio of Pb between the oxide source material solution and the oxide film is 0.01 or less.
    Type: Application
    Filed: March 30, 2009
    Publication date: October 1, 2009
    Applicant: Seiko Epson Corporation
    Inventors: Yasuaki HAMADA, Takeshi KIJIMA
  • Publication number: 20090243438
    Abstract: A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1?x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1?x)Tc(A)+xTc(B)?300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
    Type: Application
    Filed: March 30, 2009
    Publication date: October 1, 2009
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Yasuaki HAMADA, Takeshi KIJIMA
  • Publication number: 20090230346
    Abstract: A piezoelectric body includes a perovskite type compound that is expressed by a compositional formula being Pb (Zrx Ti1-x)1-y My O3, where M is at least one of Ta and Nb, x is in a range of 0.51?x?0.57, and y is in a range of 0.05?y<0.2, wherein the perovskite type compound contains at least one of SiO2 and GeO2 as an additive, and the additive is added in an amount of 0.5 mol % or higher but 5 mol % or lower with respect to the amount of perovskite type compound.
    Type: Application
    Filed: March 12, 2009
    Publication date: September 17, 2009
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Yasuaki HAMADA, Akio KONISHI, Takeshi KIJIMA
  • Patent number: 7569400
    Abstract: A ferroelectric film having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3, B including at least one of Zr and Ti, X including at least one of Nb and Ta, “a” being in a range of “0.05?a?0.4”, and “d” being in a range of “0<d<1”.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: August 4, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Takeshi Kijima, Yasuaki Hamada, Tomokazu Kobayashi, Hiromu Miyazawa
  • Publication number: 20090184290
    Abstract: To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB1-xCxO3, where an element A is composed of at least Pb, an element B is composed of at least one of Zr, Ti, V, W and Hf, an element C is composed of at least one of Nb and Ta, and the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.
    Type: Application
    Filed: December 22, 2008
    Publication date: July 23, 2009
    Applicant: Seiko Epson Corporation
    Inventors: Takeshi Kijima, Yasuaki Hamada, Mayumi Ueno
  • Publication number: 20090174754
    Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.
    Type: Application
    Filed: March 10, 2009
    Publication date: July 9, 2009
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Koji OHASHI, Setsuya IWASHITA, Takeshi KIJIMA, Yasuaki HAMADA
  • Patent number: 7524451
    Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.
    Type: Grant
    Filed: August 15, 2006
    Date of Patent: April 28, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Koji Ohashi, Setsuya Iwashita, Takeshi Kijima, Yasuaki Hamada
  • Patent number: 7504682
    Abstract: A polarization transfer device includes a ferroelectric thin film formed continuously as one piece; a plurality of polarization switches formed by placing the ferroelectric thin film between a first gate electrode and a second gate electrode; and a plurality of polarization accumulators formed by placing the ferroelectric thin film between a first electrode plate and a second electrode plate, wherein the plurality of polarization switches and the plurality of polarization accumulators are arranged alternately.
    Type: Grant
    Filed: January 16, 2007
    Date of Patent: March 17, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Masami Hashimoto, Takeshi Kijima, Yasuaki Hamada, Akio Konishi, Tatsuya Shimoda
  • Patent number: 7485182
    Abstract: To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB1-xCxO3, where an element A is composed of at least Pb, an element B is composed of at least one of Zr, Ti, V, W and Hf, an element C is composed of at least one of Nb and Ta, and the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: February 3, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Takeshi Kijima, Yasuaki Hamada, Mayumi Ueno
  • Patent number: 7428162
    Abstract: A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper electrodes includes: a saturated polarization forming electrode used for forming a domain polarized to saturation in a predetermined direction in a predetermined region of the ferroelectric layer; a writing electrode disposed apart from the saturated polarization forming electrode; and a reading electrode disposed apart from the writing electrode.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: September 23, 2008
    Assignee: Seiko Epson Corporation
    Inventors: Takeshi Kijima, Yasuaki Hamada, Tatsuya Shimoda
  • Publication number: 20080123243
    Abstract: A ferroelectric capacitor includes: an electrode including a platinum film; a seed layer that is formed above the electrode and is composed of oxide having a perovskite structure expressed by a general formula, A(B1-xCx)O3; and a ferroelectric layer formed above the seed layer, wherein A is composed of at least one of Sr and Ca, B is composed of at least one of Ti, Zr and Hf, C is composed of at least one of Nb and Ta, and X is in a range of 0<X<1.
    Type: Application
    Filed: November 28, 2007
    Publication date: May 29, 2008
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Yasuaki Hamada, Takeshi Kijima
  • Patent number: 7371473
    Abstract: A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05 ?x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.
    Type: Grant
    Filed: November 25, 2005
    Date of Patent: May 13, 2008
    Assignee: Seiko Epson Corporation
    Inventors: Takeshi Kijima, Yasuaki Hamada, Eiji Natori, Koji Ohashi