Abstract: A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate titanate or lead zirconate titanate niobate with a Nb composition smaller than a Nb composition of the lead zirconate titanate niobate composing the first dielectric film, and an upper electrode formed above the second dielectric film.

Abstract: A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.

Abstract: A ferroelectric memory includes: a memory cell having a ferroelectric capacitor, wherein, in a read-out operation, a first signal Q1 is given when a first voltage is applied to the ferroelectric capacitor, and a second signal Q2 is given when a second voltage having an identical magnitude as a magnitude of the first voltage in a different polarity is applied to the ferroelectric capacitor, and a judgment is made that the memory cell stores first data when Q1/Q2 is greater than 1/2, and second data when Q1/Q2 is smaller than 1/2.

Abstract: A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.

Abstract: A ferroelectric capacitor includes: a base substrate; a buffer layer formed above the base substrate; a lower electrode formed above the buffer layer; a ferroelectric layer formed above the lower electrode; and an upper electrode formed above the ferroelectric layer, wherein the buffer layer includes titanium (Ti) and cobalt (Co) as metal elements, and a metal element ratio x is 0.05?x<1, when Ti:Co=1?x:x.

Abstract: A method for reading a nondestructive readout type ferroelectric memory device including a process in which 1-bit data is written in a pair of a cell for storage and a cell for reference disposed in series in the ferroelectric memory device, and a process in which a response obtained when a pulse is impressed to the 1-bit data written in the pair of a cell for storage and a cell for reference is resonated by a resonant circuit with a specified resonance frequency provided at a readout side to thereby output an output signal to be nondestructively readout.

Abstract: A MFS type field effect transistor includes a semiconductor layer, a PZT system ferroelectric layer formed on the semiconductor layer, a gate electrode formed on the PZT system ferroelectric layer, and an impurity layer composing a source or a drain, formed in the semiconductor layer. The PZT system ferroelectric layer includes Nb that replaces a Ti composition by 2.5 mol % or more but 40 mol % or less.

Abstract: A ferroelectric film is formed by an oxide that is described by a general formula AB1?xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05?x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

Abstract: A polarization transfer device includes a ferroelectric thin film formed continuously as one piece; a plurality of polarization switches formed by placing the ferroelectric thin film between a first gate electrode and a second gate electrode; and a plurality of polarization accumulators formed by placing the ferroelectric thin film between a first electrode plate and a second electrode plate, wherein the plurality of polarization switches and the plurality of polarization accumulators are arranged alternately.

Abstract: A method of manufacturing an insulating target material for obtaining an insulating complex oxide film of a general formula AB1-xCxO3, the method including: mixing an oxide of an element A, an oxide of an element B, and an oxide of an element C, subjecting the mixed powder to heat treatment, and pulverizing the resulting product to obtain a first powder; mixing the first powder and a solution including at least one of an Si raw material and a Ge raw material and obtaining a second powder from the mixture of the first powder and the solution; subjecting the second powder to heat treatment and pulverizing the resulting product to obtain a third powder; and subjecting the third powder to heat treatment.

Abstract: A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper electrodes includes: a saturated polarization forming electrode used for forming a domain polarized to saturation in a predetermined direction in a predetermined region of the ferroelectric layer; a writing electrode disposed apart from the saturated polarization forming electrode; and a reading electrode disposed apart from the writing electrode.

Abstract: A complex metal oxide raw material composition used for forming a complex metal oxide, the complex metal oxide being shown by a general formula AB1-xCxO3, wherein an element A includes at least Pb, an element B includes at least one of Zr, Ti, V, W, and Hf, and an element C includes at least one of Nb and Ta, and the raw material composition including: at least one of a thermally-decomposable organometallic compound including the element A, the element B, or the element C, a hydrolyzable organometallic compound including the element A, the element B, or the element C, and a partial hydrolyzate and/or a polycondensate of the hydrolyzable organometallic compound; at least one of a polycarboxylic acid and a polycarboxylic acid ester; and an organic solvent.

Abstract: A ferroelectric thin film formed of a highly oriented polycrystal in which 180° domains and 90° domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.

Abstract: A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate titanate or lead zirconate titanate niobate with a Nb composition smaller than a Nb composition of the lead zirconate titanate niobate composing the first dielectric film, and an upper electrode formed above the second dielectric film.

Abstract: A complex oxide laminate including: a substrate; a first complex oxide layer represented by a general formula ABO3 formed above the substrate; and a second complex oxide layer represented by a general formula AB1?xCxO3 formed above the first complex oxide layer, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.

Abstract: A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.

Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.

Abstract: A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells.

Abstract: A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.

Abstract: A ferroelectric film having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3, B including at least one of Zr and Ti, X including at least one of Nb and Ta, “a” being in a range of “0.05?a?0.4”, and “d” being in a range of “0<d<1”.