Abstract: Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film.

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

Abstract: The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

Abstract: A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved. A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.

Abstract: A novel display device that is highly convenient or reliable is provided. The display device includes a first display element, a second display element, a first transistor, a second transistor, and a third transistor. The first display element includes a liquid crystal layer. The second display element includes a light-emitting layer. The first transistor has a function of selecting the first display element. The second transistor has a function of selecting the second display element. The third transistor has a function of controlling the driving of the second display element. The first transistor and the second transistor are formed over the same surface. The third transistor is formed above the first transistor and the second transistor and includes one of a source electrode and a drain electrode of the second transistor as a gate electrode.

Abstract: A method for manufacturing a novel semiconductor device is provided. The method includes a first step of forming a first oxide semiconductor film over a substrate, a second step of heating the first oxide semiconductor film, and a third step of forming a second oxide semiconductor film over the first oxide semiconductor film. The first to third steps are performed in an atmosphere in which water vapor partial pressure is lower than water vapor partial pressure in atmospheric air, and the first step, the second step, and the third step are successively performed in this order.

Abstract: Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film.

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

Abstract: An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.

Abstract: The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

Abstract: Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film.