Abstract: Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Abstract: A structure of a mounting table for mounting a substrate includes an electrostatic chuck for causing the substrate to be electrostatically attracted to the mounting table, the electrostatic chuck being disposed on the mounting table; a focus ring to be electrostatically attracted to the mounting table by the electrostatic chuck, the focus ring being disposed at an outer edge portion of the electrostatic chuck; a first elastic body having predetermined relative permittivity, the first elastic body being disposed at an outer peripheral portion of a boundary surface between the focus ring and the electrostatic chuck; and a second elastic body having the predetermined relative permittivity, the second elastic body being disposed at an inner peripheral portion of the boundary surface between the focus ring and the electrostatic chuck while being separated from the first elastic body by a predetermined distance.

Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.

Abstract: A mounting table includes an electrostatic chuck, a base, and a cylindrical sleeve. The electrostatic chuck has a top surface to be exposed to plasma and a bottom surface opposite to the top surface, and a first through-hole is formed through the electrostatic chuck. The base is bonded to the bottom surface of the electrostatic chuck by a first adhesive, and a second through-hole is formed through the base. The second through-hole communicates with the first through-hole and has a diameter larger than a diameter of the first through-hole. The sleeve is bonded to the bottom surface of the electrostatic chuck by a second adhesive while communicating with the first through-hole.

Abstract: A zone temperature control structure which has two or more zone of which surface temperatures are controlled to different temperatures, respectively. The structure can maintain a temperature difference by suppressing heat conduction in a direction in which the zones are arrayed, and prevent formation of a hot spot by ensuring smooth heat conduction for heat input in a direction intersecting the direction in which the zones are arrayed. A heat-conducting anisotropic material layer is disposed between the two or more zones. The heat-conducting anisotropic material layer is configured such that heat conductivity is lower in the direction in which the two or more zones are arrayed than in the direction intersecting the direction in which the two or more zones are arrayed.

Abstract: A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first DC power supply that applies a DC voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first DC power supply to the electrode of the electrostatic chuck; cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off.

Abstract: An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.

Abstract: A cooling system can control a coolant temperature with a simple configuration. The cooling system 90 includes a vaporization vessel 80, a first fluid source 92, a first flow rate control unit 91, and a pressure control unit 99. The vaporization vessel 80 has a space, a supply opening 80a and a discharge opening 80b through which the coolant is supplied and discharged, respectively. The first fluid source 92 stores a first fluid having a vapor pressure higher than that of the coolant. The first flow rate control unit 91 connects the first fluid source 92 to the vaporization vessel 80 and controls a first fluid supply amount into the vaporization vessel. The pressure control unit 99 controls an internal pressure within the vaporization vessel to be higher than the vapor pressure of the coolant and equal to or lower than that of the first fluid.

Abstract: Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Abstract: A method of adsorbing a target object on a mounting table is provided. The mounting table is provided within a processing vessel that partitions a depressurizable space in a processing apparatus which processes a processing target object within the space. Further, the processing apparatus serves as a plasma processing apparatus. The method includes mounting the target object on an electrostatic chuck of the mounting table; and applying three AC voltages having different phases to three electrodes of the electrostatic chuck, respectively.

Abstract: In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.

Abstract: A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.

Abstract: Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Abstract: A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first DC power supply that applies a DC voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first DC power supply to the electrode of the electrostatic chuck; cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off.

Abstract: A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.

Abstract: An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.

Abstract: A temperature control apparatus (70) includes a heat exchanger (71) configured to exchange heat with the surroundings using a phase change of a refrigerant, a rotary pump (73) configured to receive the refrigerant from the heat exchanger (71) and fuse the refrigerant with oil contained inside the rotary pump, and an oil water separator (74) configured to receive the refrigerant fused with the oil from the rotary pump (73) and separate the refrigerant from the oil. The temperature control apparatus further includes a refrigeration cycle that implements a cooling function by circulating the refrigerant separated from the oil back to the heat exchanger (71).