Patents by Inventor Yasuharu Sasaki

Yasuharu Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11037815
    Abstract: A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: June 15, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Yasuharu Sasaki, Katsunori Hirai, Junichi Sasaki
  • Patent number: 11004717
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: May 11, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro Matsuyama, Daiki Satoh, Yasuharu Sasaki, Takashi Nishijima, Jinyoung Park
  • Publication number: 20210118647
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Application
    Filed: September 22, 2020
    Publication date: April 22, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yasuharu SASAKI, Hidetoshi HANAOKA, Tomohiko AKIYAMA
  • Publication number: 20210082733
    Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Daiki SATOH, Akira NAGAYAMA
  • Publication number: 20210074522
    Abstract: A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.
    Type: Application
    Filed: November 19, 2020
    Publication date: March 11, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Naoki TAMARU, Yasuharu SASAKI
  • Patent number: 10910252
    Abstract: A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: February 2, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Akira Ishikawa, Ryo Chiba
  • Publication number: 20210005495
    Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 7, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Taketoshi TOMIOKA, Hiroki KISHI, Jisoo SUH
  • Patent number: 10886108
    Abstract: A power feed structure includes a first connecting member group and a ring-shaped first terminal member. The first connecting member group includes a plurality of first connecting members arranged along a circumferential direction of a focus ring disposed in a processing chamber of a plasma processing apparatus to apply a bias potential to the focus ring. The ring-shaped first terminal member is electrically connected to the first connecting members.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: January 5, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Yohei Uchida
  • Patent number: 10879050
    Abstract: Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: December 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro Matsuyama, Naoki Tamaru, Yasuharu Sasaki
  • Publication number: 20200402777
    Abstract: A stage includes an electrostatic chuck that supports a substrate and an edge ring; and a base that supports the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and supports the substrate placed on the first upper surface; a second region having a second upper surface, provided integrally around the first region, and supports the edge ring placed on the second upper surface; a first electrode provided in the first region to apply a DC voltage; a second electrode provided in the second region to apply a DC voltage, and a third electrode to apply a bias power.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 24, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Tsuguto SUGAWARA, Shin YAMAGUCHI, Hajime TAMURA
  • Publication number: 20200388472
    Abstract: There is provision of an electrostatic chuck for supporting a substrate and an edge ring including a first region, a second region, an electrode provided in the second region, and an elastic member. The first region includes a first top surface and is configured to hold the substrate that is placed on the first top surface. The second region extends in a circumferential direction of the first region so as to surround the first region. The second region includes a second top surface, and is configured to support the edge ring placed on the second top surface. The first top surface and the second top surface extend along a single flat plane. A part of the edge ring is accommodated in a space provided between the first region and the second region, and the elastic member is disposed between the part of the edge ring and the electrostatic chuck.
    Type: Application
    Filed: June 3, 2020
    Publication date: December 10, 2020
    Inventors: Masato TAKAYAMA, Yasuharu SASAKI
  • Publication number: 20200373130
    Abstract: A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.
    Type: Application
    Filed: May 19, 2020
    Publication date: November 26, 2020
    Inventors: Takehiro Tanikawa, Shuhei Yamabe, Yohei Uchida, Yasuharu Sasaki
  • Patent number: 10832930
    Abstract: Disclosed is an electrostatic attraction method including: a first step in which a gas is introduced into a chamber in which the processing target object is to be processed before a processing target object is placed on a stage within the chamber, and plasma is generated by applying a high frequency power; a second step in which a DC voltage having a polarity opposite to a polarity of a DC voltage to be applied when attracting the processing target object, to an electrostatic chuck provided on the stage after the first step; a third step where extinguishing of the plasma by stopping application of the high frequency power is performed after the second step; and a fourth step where application of the DC voltage is stopped after the third step.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: November 10, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Katsunori Hirai, Yasuharu Sasaki
  • Patent number: 10825709
    Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: November 3, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Taketoshi Tomioka, Hiroki Kishi, Jisoo Suh
  • Publication number: 20200335384
    Abstract: The present invention provides a stage which comprises: a plate-shaped member having a mounting surface on which a workpiece to be processed is mounted and a rear surface facing the mounting surface, said plate-shaped member being provided with a through hole that penetrates through the mounting surface and the rear surface; and an embedded member disposed inside the through hole. This stage is configured such that the surface of the embedded member is provided with at least one of a concave portion and a convex portion.
    Type: Application
    Filed: June 5, 2019
    Publication date: October 22, 2020
    Inventors: Ryo CHIBA, Yasuharu SASAKI, Akira NAGAYAMA
  • Publication number: 20200194240
    Abstract: A power feed structure includes a first connecting member group and a ring-shaped first terminal member. The first connecting member group includes a plurality of first connecting members arranged along a circumferential direction of a focus ring disposed in a processing chamber of a plasma processing apparatus to apply a bias potential to the focus ring. The ring-shaped first terminal member is electrically connected to the first connecting members.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Yohei UCHIDA
  • Publication number: 20200194239
    Abstract: Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.
    Type: Application
    Filed: May 29, 2019
    Publication date: June 18, 2020
    Inventors: Yasuharu SASAKI, Kyo TSUBOI, Tomoya KATO, Shoichiro MATSUYAMA
  • Publication number: 20200185250
    Abstract: A mounting table includes a substrate mounting area for placing a substrate; a focus ring mounting area for placing a focus ring, so that the focus ring surrounds the substrate mounting area; an electrode that electrostatically attracts the focus ring; ring-shaped first and second elastic bodies, wherein the second elastic body is placed at an inner side in a radial direction compared to the first elastic body, and the first elastic body and the second elastic body directly contact a back surface of the focus ring, the focus ring mounting area includes a recess that is provided with a supply hole that supplies a heat transfer gas to the recess, the electrode extends inward and outward in a radial direction with respect to a location of the supply hole, and the first elastic body and the second elastic body are placed in the recess.
    Type: Application
    Filed: February 19, 2020
    Publication date: June 11, 2020
    Inventors: Naoyuki SATOH, Yasuharu SASAKI
  • Publication number: 20200152428
    Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; a second support area configured to support a focus ring placed thereon, and extending in a circumferential direction outward in a radial direction with respect to the first support area; a conductive structure configured to be connected to the focus ring; and a holder configured to hold the connection member to press the connection member downward, and also to cause the connection member to press the surface of the focus ring. The conductive structure includes a first conductive path which provides a terminal area outward in the radial direction with respect to the second support area, and a connection member configured to electrically connect the focus ring and the terminal area, and disposed on the terminal area to face a surface of the focus ring.
    Type: Application
    Filed: November 8, 2019
    Publication date: May 14, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Yohei UCHIDA
  • Publication number: 20200152429
    Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; and a second support area configured to support a focus ring placed thereon. The second support area includes a lower electrode, a chuck area, and a bonding area. The chuck area includes a first electrode and a second electrode, and is configured to hold the focus ring by a potential difference set between the first electrode and the second electrode. The first electrode and the second electrode extend in the circumferential direction, and the first electrode is provided inward in the radial direction with respect to the second electrode. The substrate support further includes a first conducting wire and a second conducting wire each extending around a center or on the center between an inner boundary and an outer boundary of the second support area.
    Type: Application
    Filed: November 8, 2019
    Publication date: May 14, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Shingo KOIWA