Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

Abstract: There is provision of an electrostatic chuck for supporting a substrate and an edge ring including a first region, a second region, an electrode provided in the second region, and an elastic member. The first region includes a first top surface and is configured to hold the substrate that is placed on the first top surface. The second region extends in a circumferential direction of the first region so as to surround the first region. The second region includes a second top surface, and is configured to support the edge ring placed on the second top surface. The first top surface and the second top surface extend along a single flat plane. A part of the edge ring is accommodated in a space provided between the first region and the second region, and the elastic member is disposed between the part of the edge ring and the electrostatic chuck.

Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.

Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; and a second support area configured to support a focus ring placed thereon. The second support area includes a lower electrode, a chuck area, and a bonding area. The chuck area includes a first electrode and a second electrode, and is configured to hold the focus ring by a potential difference set between the first electrode and the second electrode. The first electrode and the second electrode extend in the circumferential direction, and the first electrode is provided inward in the radial direction with respect to the second electrode. The substrate support further includes a first conducting wire and a second conducting wire each extending around a center or on the center between an inner boundary and an outer boundary of the second support area.

Abstract: A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.

Abstract: A substrate support assembly includes a supporting table and one or more piezoelectric elements disposed between the supporting table and a focus ring. The supporting table has an upper surface, and the upper surface includes a first region on which a substrate is mounted and a second region on which the focus ring is disposed, the second region extending in a circumferential direction at an outer side of the first region. The one or more piezoelectric elements are disposed between the focus ring and the second region to be in direct or indirect contact with the focus ring and the second region. Changes in thicknesses of the one or more piezoelectric elements cause a change in a vertical position of the focus, and the thicknesses of the one or more piezoelectric elements are adjustable to suppress a generation of a gap between the focus ring and the second region.

Abstract: A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.

Abstract: A substrate support assembly includes a supporting table and one or more piezoelectric elements disposed between the supporting table and a focus ring. The supporting table has an upper surface, and the upper surface includes a first region on which a substrate is mounted and a second region on which the focus ring is disposed, the second region extending in a circumferential direction at an outer side of the first region. The one or more piezoelectric elements are disposed between the focus ring and the second region to be in direct or indirect contact with the focus ring and the second region. Changes in thicknesses of the one or more piezoelectric elements cause a change in a vertical position of the focus, and the thicknesses of the one or more piezoelectric elements are adjustable to suppress a generation of a gap between the focus ring and the second region.

Abstract: A placing table includes an edge ring disposed to surround a substrate, the edge ring having a first recess portion at a lower portion thereof; an electrostatic chuck having a first placing surface on which the substrate is placed, a second placing surface on which the edge ring is placed, and an electrode embedded therein to face the second placing surface; an annular member disposed to surround the electrostatic chuck, the annular member having a second recess portion; and an elastic member disposed in a space surrounded by the first recess portion, the electrostatic chuck and the second recess portion.

Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; a second support area configured to support a focus ring placed thereon, and extending in a circumferential direction outward in a radial direction with respect to the first support area; a conductive structure configured to be connected to the focus ring; and a holder configured to hold the connection member to press the connection member downward, and also to cause the connection member to press the surface of the focus ring. The conductive structure includes a first conductive path which provides a terminal area outward in the radial direction with respect to the second support area, and a connection member configured to electrically connect the focus ring and the terminal area, and disposed on the terminal area to face a surface of the focus ring.

Abstract: The present invention provides a stage which comprises: a plate-shaped member having a mounting surface on which a workpiece to be processed is mounted and a rear surface facing the mounting surface, said plate-shaped member being provided with a through hole that penetrates through the mounting surface and the rear surface; and an embedded member disposed inside the through hole. This stage is configured such that the surface of the embedded member is provided with at least one of a concave portion and a convex portion.

Abstract: Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

Abstract: A mounting table includes a substrate mounting area for placing a substrate; a focus ring mounting area for placing a focus ring, so that the focus ring surrounds the substrate mounting area; an electrode that electrostatically attracts the focus ring; ring-shaped first and second elastic bodies, wherein the second elastic body is placed at an inner side in a radial direction compared to the first, elastic body, and the first elastic body and the second elastic body directly contact a back surface of the focus ring, the focus ring mounting area includes a recess that is provided with a supply hole that supplies a heat transfer gas to the recess, the electrode extends inward and outward in a radial direction with respect to a location of the supply hole, and the first elastic body and the second elastic body are placed in the recess.