Patents by Inventor Yasuharu Sasaki

Yasuharu Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11521886
    Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: December 6, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Taketoshi Tomioka, Hiroki Kishi, Jisoo Suh
  • Publication number: 20220384155
    Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 1, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Yasuharu SASAKI, Tsuguto Sugawara, Shin Yamaguchi, Hajime Tamura
  • Publication number: 20220375777
    Abstract: A mounting table includes a substrate mounting area for placing a substrate; a focus ring mounting area for placing a focus ring, so that the focus ring surrounds the substrate mounting area; an electrode that electrostatically attracts the focus ring; ring-shaped first and second elastic bodies, wherein the second elastic body is placed at an inner side in a radial direction compared to the first, elastic body, and the first elastic body and the second elastic body directly contact a back surface of the focus ring, the focus ring mounting area includes a recess that is provided with a supply hole that supplies a heat transfer gas to the recess, the electrode extends inward and outward in a radial direction with respect to a location of the supply hole, and the first elastic body and the second elastic body are placed in the recess.
    Type: Application
    Filed: August 2, 2022
    Publication date: November 24, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Naoyuki SATOH, Yasuharu SASAKI
  • Publication number: 20220336193
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Application
    Filed: July 1, 2022
    Publication date: October 20, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yasuharu SASAKI, Hidetoshi HANAOKA, Tomohiko AKIYAMA
  • Publication number: 20220285138
    Abstract: A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.
    Type: Application
    Filed: March 2, 2022
    Publication date: September 8, 2022
    Inventors: Shin YAMAGUCHI, Yasuharu SASAKI, Koei ITO
  • Patent number: 11437223
    Abstract: A stage includes an electrostatic chuck that supports a substrate and an edge ring; and a base that supports the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and supports the substrate placed on the first upper surface; a second region having a second upper surface, provided integrally around the first region, and supports the edge ring placed on the second upper surface; a first electrode provided in the first region to apply a DC voltage; a second electrode provided in the second region to apply a DC voltage, and a third electrode to apply a bias power.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: September 6, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Tsuguto Sugawara, Shin Yamaguchi, Hajime Tamura
  • Patent number: 11417500
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: August 16, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Junichi Sasaki, Yasuharu Sasaki, Hidetoshi Hanaoka, Tomohiko Akiyama
  • Publication number: 20210366694
    Abstract: An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.
    Type: Application
    Filed: June 3, 2019
    Publication date: November 25, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Yasuharu SASAKI, Shoichiro MATSUYAMA, Yohei UCHIDA
  • Publication number: 20210327688
    Abstract: A mounting base for placing a substrate to be subjected to a predetermined processing is provided. The mounting base includes an electrostatic chuck for electrostatically attracting and holding the substrate, a first edge ring that is disposed around the substrate and is transferrable, a second edge ring fixed around the first edge ring, a lifter pin for raising and lowering the first edge ring, a first electrode disposed in a position facing the first edge ring in the electrostatic chuck to electrostatically attract and hold the first edge ring; and a second electrode disposed in a position facing the second edge ring in the electrostatic chuck to electrostatically attract and hold the second edge ring.
    Type: Application
    Filed: August 26, 2019
    Publication date: October 21, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Yasuharu SASAKI, Yohei UCHIDA
  • Publication number: 20210327741
    Abstract: A substrate support is provided that includes: a base; an electrostatic chuck on which a substrate is placed; an electrode provided in the electrostatic chuck; a contact portion of the electrode; an adhesive layer that bonds the electrostatic chuck with the base and that does not cover the contact portion; and a power supply terminal contacting the contact portion of the electrode without being fixed to the contact portion.
    Type: Application
    Filed: September 3, 2019
    Publication date: October 21, 2021
    Inventors: Akira NAGAYAMA, Yasuharu SASAKI, Taketoshi TOMIOKA, Shin YAMAGUCHI
  • Publication number: 20210316416
    Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.
    Type: Application
    Filed: June 25, 2021
    Publication date: October 14, 2021
    Inventors: Taketoshi TOMIOKA, Yasuharu SASAKI, Hiroki KISHI, Jisoo SUH
  • Publication number: 20210319987
    Abstract: An edge ring to be disposed to encircle a substrate is provided. The edge ring includes a bottom used to define vertical heights that are from points on the circumference of a virtual circle, to the bottom of the edge ring, the virtual circle having a radius from a first point that is placed on a central axis of the edge ring, the first point being defined as the center of the virtual circle, the radius being half of a diameter ranging from an inner diameter to an outer diameter of the edge ring, and an absolute value indicative of a difference between a maximum value and a minimum value for the vertical heights being set to be less than or equal to a preset upper limit.
    Type: Application
    Filed: April 1, 2021
    Publication date: October 14, 2021
    Inventors: Ryo CHIBA, Akira NAGAYAMA, Yasuharu SASAKI, Daiki SATOH, Taketoshi TOMIOKA
  • Publication number: 20210305025
    Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.
    Type: Application
    Filed: March 2, 2021
    Publication date: September 30, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Hajime TAMURA, Yasuharu SASAKI, Shin YAMAGUCHI, Tsuguto SUGAWARA, Katsuyuki KOIZUMI
  • Patent number: 11133759
    Abstract: An electrostatic chuck includes a plurality of electrodes configured to generate an electrostatic force for attracting and holding a substrate and a surface on which the substrate is to be mounted. The electrodes are arranged respectively in multiple regions radially and circumferentially defined in the electrostatic chuck. Further, a substrate processing apparatus includes an electrostatic chuck including a plurality of electrodes configured to generate an electrostatic force for attracting and holding a substrate and a surface on which the substrate is to be mounted; and a controller configured to control a timing of applying a DC voltage to each of the electrodes. Each of the electrodes generates an electrostatic force for attracting and holding the substrate by the DC voltage applied thereto, and the electrodes are arranged respectively in multiple regions radially and circumferentially defined in the electrostatic chuck.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: September 28, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Yasuharu Sasaki
  • Publication number: 20210280397
    Abstract: A plasma processing apparatus includes a chamber, a stage, a semiconductive ring, a power source, at least one conductive member, and a conductive layer. The chamber has a plasma processing space. The stage is disposed in the plasma processing space and has an electrostatic chuck. The semiconductive ring is disposed on the stage so as to surround a substrate placed on the stage, the semiconductive ring having a first face. The at least one conductive member is disposed in the stage and in electrical connection with the power source. The conductive layer is disposed on the first face of the semiconductive ring and in electrical connection with the at least one conductive member.
    Type: Application
    Filed: March 3, 2021
    Publication date: September 9, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoichi KUROSAWA, Shoichiro MATSUYAMA, Yasuharu SASAKI, Chishio KOSHIMIZU
  • Publication number: 20210233794
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Application
    Filed: April 16, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Daiki SATOH, Yasuharu SASAKI, Takashi NISHIJIMA, Jinyoung PARK
  • Patent number: 11037815
    Abstract: A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: June 15, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Yasuharu Sasaki, Katsunori Hirai, Junichi Sasaki
  • Patent number: 11004717
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: May 11, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro Matsuyama, Daiki Satoh, Yasuharu Sasaki, Takashi Nishijima, Jinyoung Park
  • Publication number: 20210118647
    Abstract: A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
    Type: Application
    Filed: September 22, 2020
    Publication date: April 22, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Junichi SASAKI, Yasuharu SASAKI, Hidetoshi HANAOKA, Tomohiko AKIYAMA
  • Publication number: 20210082733
    Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Daiki SATOH, Akira NAGAYAMA