Abstract: A plasma processing apparatus of processing a processing target object within a depressurized space is provided. The plasma processing apparatus includes a processing vessel that partitions a depressurizable space; a mounting table, provided within the processing vessel, having an electrostatic chuck which is for a focus ring and has three electrodes; a power supply configured to apply three AC voltages having different phases to the three electrodes, respectively, to adsorb a target object on the electrostatic chuck.

Abstract: A plasma processing apparatus includes a mounting stage including a mounting surface, on which an object to be processed is mounted, a back surface provided on a side opposite to the mounting surface, a plate-like member, in which a first hole penetrating through the mounting surface and the back surface is formed, and a base having a supporting surface for supporting the plate-like member and having a second hole communicating with the first hole; and an embedment member disposed inside the first and second holes, the first embedment member being disposed inside the first hole, the second embedment member being disposed inside the second hole, wherein the first embedment member and the second embedment member are not mutually fixed, and the first embedment member has a portion having a wider width than a width of an upper end portion on a lower side than the upper end portion.

Abstract: A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.

Abstract: A support table according to an embodiment includes a base and a support. The support is provided on the base. The support has a main body and a conductive film. The main body is formed of a dielectric material. The body has a surface region and a rear surface. The surface region is a region that is in contact with a rear surface of the substrate placed on the support. The rear surface is a surface opposite to the surface region. The rear surface of the support is bonded to the base. The conductive film is spaced apart from the surface region, and has an undulation. The surface region extends along the conductive film.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.

Abstract: A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.

Abstract: Disclosed is an electrostatic attraction method including: a first step in which a gas is introduced into a chamber in which the processing target object is to be processed before a processing target object is placed on a stage within the chamber, and plasma is generated by applying a high frequency power; a second step in which a DC voltage having a polarity opposite to a polarity of a DC voltage to be applied when attracting the processing target object, to an electrostatic chuck provided on the stage after the first step; a third step where extinguishing of the plasma by stopping application of the high frequency power is performed after the second step; and a fourth step where application of the DC voltage is stopped after the third step.

Abstract: Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.

Abstract: A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.

Abstract: A plasma processing apparatus of processing a processing target object within a depressurized space is provided. The plasma processing apparatus includes a processing vessel that partitions a depressurizable space; a mounting table, provided within the processing vessel, having an electrostatic chuck which is for a focus ring and has three electrodes; a power supply configured to apply three AC voltages having different phases to the three electrodes, respectively, to adsorb a target object on the electrostatic chuck.

Abstract: A focus ring that surrounds a periphery of a substrate placed on a stage in a processing chamber of a substrate processing apparatus includes a lower surface to contact a peripheral portion of the stage, the lower surface being inclined such that an outer peripheral side becomes lower than an inner peripheral side in a radial direction.

Abstract: A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.

Abstract: A method of adsorbing a target object on a mounting table is provided. The mounting table is provided within a processing vessel that partitions a depressurizable space in a processing apparatus which processes a processing target object within the space. Further, the processing apparatus serves as a plasma processing apparatus. The method includes mounting the target object on an electrostatic chuck of the mounting table; and applying three AC voltages having different phases to three electrodes of the electrostatic chuck, respectively.

Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.

Abstract: A temperature control method is performed by a temperature control apparatus including a heat exchanger configured to exchange heat using a phase change of a refrigerant, a rotary pump configured to receive the refrigerant from the heat exchanger and fuse the refrigerant with oil contained inside the rotary pump, and an oil refrigerant separator configured to receive the refrigerant fused with the oil from the rotary pump and separate the refrigerant from the oil. The temperature control method includes the steps of: circulating the refrigerant separated from the oil back to the heat exchanger; and adjusting at least one of a rotation speed of a rotor of the rotary pump, a position of a valve arranged at a connecting portion of the rotary pump and the heat exchanger, and a position of an airflow adjustment valve arranged at a connecting portion of the oil refrigerant separator and the heat exchanger.

Abstract: Provided is a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor disposed in the chamber and on which the substrate is held; a shower head provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water.