Abstract: There is provided a layered thin film structure forming method capable of forming a layered thin film structure bonded to an underlying layer by high adhesion, of suppressing the peeling of the layered thin film structure off the underlying layer, of achieving satisfactory step coverage even under high miniaturization, and of satisfactorily diffusing an alloying element. A layered thin film structure forming method of forming a layered thin film structure by depositing a plurality of thin films on a surface of a workpiece in a processing vessel capable of being evacuated includes the steps of: forming an alloying-element film 104 of a first metal by using a source gas containing the first metal as an alloying element, and a reducing gas; and forming a base-metal film 106 of a second metal in a thickness greater than that of the alloying-element film by using a source gas containing the second metal, and a reducing gas.

Abstract: A vaporizer can efficiently vaporize a liquid material under a depressurized atmosphere. The liquid material is temporarily stored in a liquid storing chamber, and is supplied to a vaporizing chamber set in the depressurized atmosphere via a small aperture. An inlet of the liquid storing chamber is opened or closed by a valve body, which is moved by an actuator controlling a degree of opening of the valve body.

Abstract: The present invention provides a photosensitive lithographic printing plate which is excellent in both workability and image forming properties and is also capable of omitting the use of a laminated-paper. The present invention also provides an interleaving sensitive granular matting agent for photosensitive lithographic printing plate, which is used by applying onto the surface of an infrared-sensitive lithographic printing plate, comprising an infrared absorbing dye. Surface treatment is conducted by applying a granular matting agent containing an infrared absorbing dye onto the surface of an infrared-sensitive lithographic printing plate.

Abstract: A method of operating a gas phase growth system is disclosed. The method includes a processing stage and a stabilizer feeding stage. In a non-limiting embodiment of the disclosure, an organometallic complex is vaporized by a vaporizer, and subsequently fed to a reaction chamber through a gas line communicating the vaporizer with the reaction chamber, whereby a film is formed on a substrate in the reaction chamber. During the stabilizer feeding stage, a stabilizer for the organometallic complex is fed in a gaseous state during normal operation of the vaporizer, wherein the stabilizer feeding stage is executed when the vaporizer is not vaporizing the organometallic complex.

Abstract: There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.

Abstract: A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H2 is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.

Abstract: In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.

Abstract: In a state of the inside of a treatment chamber of treatment equipment being evacuated, therein a cleaning gas containing trifluoroacetic acid (TFA) as a cleaning agent is supplied. Metal such as copper used in the formation of an interconnection or an electrode and stuck on an inner wall surface of the treatment chamber, when coming into contact with the cleaning agent (TFA) in the cleaning gas, without forming an oxide or a metallic salt, is directly complexed. The complex is sublimed due to the evacuation and is exhausted outside the treatment chamber. Accordingly, at less labor and low cost, the cleaning can be efficiently implemented.

Abstract: In a state of the inside of a treatment chamber of treatment equipment being evacuated, therein a cleaning gas containing trifluoroaceticacid (TFA) as a cleaning agent is supplied. Metal such as copper used in the formation of an interconnection or an electrode and stuck on an inner wall surface of the treatment chamber, when coming into contact with the cleaning agent (TFA) in the cleaning gas, without forming an oxide or a metallic salt, is directly complexed. The complex is sublimed due to the evacuation and is exhausted outside the treatment chamber. Accordingly, at less labor and low cost, the cleaning can be efficiently implemented.

Abstract: A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase by plasma and supplied onto the substrate.

Abstract: A method for determining a urea concentration in an aqueous solution containing urea, includes: hydrolyzing the urea in the aqueous solution, measuring an electric conductivity ? of the aqueous solution, and determining the urea concentration in the aqueous solution from the electric conductivity ? using a correlation between the urea concentration and an electric conductivity.

Abstract: In a process and an apparatus for synthesizing urea which synthesize urea from ammonia and carbon dioxide, the operating condition can be grasped easily and with good accuracy. A process for synthesizing urea which includes: a reaction step of obtaining a urea synthesis solution which contains urea, unreacted ammonia, unreacted carbon dioxide and water by causing ammonia and carbon dioxide to react with each other; a stripping step of separating a gas mixture containing the unreacted ammonia and the unreacted carbon dioxide by stripping the urea synthesis solution by using at least a portion of raw material carbon dioxide; a condensing step of obtaining a condensed liquid by condensing the gas mixture in an absorbing medium while cooling the gas mixture; a recycling step of recycling the condensed liquid to the reaction step; and a step of measuring the density of the condensed liquid online. An apparatus for carrying out this process is provided.

Abstract: In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.

Abstract: Urea is prepared by reacting ammonia and carbon dioxide in an apparatus comprising a vertical condensation and synthesis column and a stripper, to provide a urea synthesis solution comprising urea, unreacted ammonia, unreacted carbon dioxide and water. The urea synthesis solution is transferred from the top of the vertical condensation and synthesis column to the top of a stripper. Carbon dioxide is introduced into the bottom of the stripper and contacted with the urea synthesis solution, thereby separating the unreacted ammonia and the unreacted carbon dioxide from the urea, and providing a mixed gas comprising ammonia, carbon dioxide and water. The mixed gas is transferred into the bottom of the vertical condensation and synthesis column, where it is reacted with liquid ammonia injected into the bottom and a middle of the vertical condensation and synthesis column. The mixed gas and liquid ammonia are condensed and react to form urea.

Abstract: A chamber having an approximately triangular transverse cross section is provided with a gas supply opening at its one side, and is provided with an exhaust opening at a vertex facing the one side. Further, the gas supply opening is provided with a showerhead-like gas supply section. Based on this configuration, the chamber is structured such that a cross-sectional area of a gas flow passage formed from the gas supply opening to the exhaust opening gradually decreases toward a direction of gas supply. At this time, a thickness of a boundary layer formed on a wall of the chamber becomes substantially constant.

Abstract: A reactor including a reactor vessel and heat exchange tubes provided in the reactor vessel. The reactor vessel includes a tubesheet and is configured to receive a reaction fluid. The tubesheet has a first plate member configured to contact the reaction fluid and a second plate member configured to not contact the reaction fluid. Heat exchange tubes are provided in the reactor vessel and fixed to the first plate member. The heat exchange tubes are configured to receive a heat exchange medium. At least a portion of the first plate member configured to contact the reaction fluid is made of a metal that has a high corrosion-resistance against the reaction liquid, and the second plate member is made of a metal that has a low corrosion-resistance against the reaction liquid. The second plate member is detachably fixed to a remainder of the reactor vessel.

Abstract: A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times.

Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

Abstract: A heater plate, which has a wafer W mounted thereon and which includes a heater in its interior, is placed on a cooling block including a coolant chamber in its interior. The cooling block includes a gas introduction pipe passing therethrough. The gas introduction pipe is connected to a space between the heater plate and the cooling block to make it possible to supply He gas as thermal conduction gas to the space. A gas suction pipe 34 is connected to the space to make it possible to suck He gas.

Abstract: At the downstream side of the vaporizer, there are provided an orifice, and a pressure gage to measure a gas pressure between the vaporizer and the orifice. The measurement signal of the pressure gage 15 is inputted into a controller, and the controller controls the amount of the liquid material injected from a liquid delivery pump into the vaporizer so that the pressure measured by the pressure gage comes to a predetermined value. Backed by this, it is possible to supply the vaporized process gas into the process chamber at a predetermined flow rate.