Abstract: A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of the processing vessel, an exhauster for exhausting the processing vessel, an operating state detector for detecting the operating state of the exhauster, and an end point detector for detecting the end point of the cleaning on the basis of the detection result from the operating state detector.

Abstract: A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member.

Abstract: The ceiling surface (12b) of a chamber (12) is substantially entirely formed with a gas supply port (19). Further, the gas supply port (19) has shower head (20) fitted therein. The peripheral edge of the ceiling surface (12b) has connected thereto a second side wall (12d) forming an angle greater than 90 degrees with ceiling surface (12b). Further, the side surface of a susceptor (16) is formed such that it forms an angle greater than 90 degrees with a mounting surface for a wafer (W) and is substantially parallel with the second side wall (12d) of the chamber (12). Further, the susceptor (16) is disposed such that the distance (L2) between its side surface and the second side wall (12d) is greater than the distance (L1) between the shower head (20) and the wafer (W).

Abstract: When the vaporizer 2 does not vaporize an organometallic complex Cu (hfac) TMVS, a stabilizer TMVS for the organometallic complex is fed into the gas area Av of the vaporizer 2 or the pipe 14 connected to the vaporizer 1 on the downstream side thereof in a gaseous state.

Abstract: In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.

Abstract: Photosensitive compositions comprising a phenol resin having a urea bond in the main chain, planographic printing plate precursors containing the photosensitive compositions, and methods for preparing planographic printing plates using the planographic printing plate precursors are disclosed. Planographic printing plates that exhibit good durability, good exposure visual image property, and good solvent resistance; particularly superior resistance to washing oil used in UV ink printing; and superior baking property are produced.

Abstract: In a thin-film deposition apparatus, a plurality of kinds of source gases are supplied to a reaction chamber one kind at a time by switching the supply of the source gases at high speed so as to reduce a process time. A supply passage is connected to the reaction chamber so as to supply the source gases and an inert gas to the reaction chamber. A source-gas supply opening is provided in the supply passage so as to supply each of the source gases to the supply passage. A source-gas valve is also provided in the supply passage for opening and closing the source-gas supply opening.

Abstract: A substrate treatment device includes: a treatment chamber in which a substrate is to be placed; a supply system configured to supply at least two kinds of treatment gases into the treatment chamber; an exhaust system having a pump, configured to exhaust the treatment gases from the treatment chamber; and a capturing unit interposed between the treatment chamber and the pump and containing fine grains, configured to capture by the fine grains at least one kind of the treatment gas exhausted from the treatment chamber.

Abstract: Lithographic printing form precursors comprising positive working polymeric coatings on substrates may during storage or transportation undergo undesirable changes in their imaging properties. It has been found that acceptable properties can be restored by carrying out a heat treatment which involves a relatively short heating stage followed by accelerated cooling.

Abstract: After a thin film is deposited on a treatment surface of a wafer and the wafer is transferred out of a treatment chamber, a contact projection of a clamp is brought into contact with a susceptor to heat the clamp. Next, a wafer is disposed on the susceptor by elevating the clamp when the wafer, on which a thin film is not deposited, is transferred in. Thereafter, the clamp is brought into contact with the wafer and the wafer is stabilized to a predetermined temperature. Thereafter, a thin film is deposited on a treatment surface of the wafer.

Abstract: A processing apparatus has a reduced volume of a process chamber by simplifying a support structure of a substrate placement stage so as to perform a high-speed gas exchange. The process chamber made of metal applies a process to an object to be processes placed in the process chamber by supplying a process gas to the object to be processed. A placement stage made of ceramics or a metal matrix composite is located inside the process chamber so that the object to be processed is placed thereon. A heating device is incorporated into the placement stage. A support member made of a metal matrix composite supports the placement stage. A seal member is located between the support member and a wall surface of the process chamber. A cooling mechanism is located in the vicinity of the seal member so as to cool the seal member.

Abstract: A heater plate, which has a wafer W mounted thereon and which includes a heater in its interior, is placed on a cooling block including a coolant chamber in its interior. The cooling block includes a gas introduction pipe passing therethrough. The gas introduction pipe is connected to a space between the heater plate and the cooling block to make it possible to supply He gas as thermal conduction gas to the space. A gas suction pipe 34 is connected to the space to make it possible to suck He gas.

Abstract: Photosensitive compositions comprising a phenol resin having a urea bond in the main chain, planographic printing plate precursors containing the photosensitive compositions, and methods for preparing planographic printing plates using the planographic printing plate precursors are disclosed. Planographic printing plates that exhibit good durability, good exposure visual image property, and good solvent resistance; particularly superior resistance to washing oil used in UV ink printing; and superior baking property are produced.

Abstract: The present invention relates to a lithographic printing plate in which images can be inscribed by laser beams, and which has high resolving power, high sensitivity, and the improved reservation stability, and relates to its image-producing method, and a photosenstitive composition which can preferably be used as an original plate for lithographic printing. The photosenstitive composition includes an aqueous resin composition including fine particles (a) of a resin having at least one neutralized anionic group and having a heat fusion property, and a water soluble resin (b) having at least one neutralized anionic group, wherein the water soluble resin (b) is included in a range of 1 to 30% by weight, relative to the total weight of the aqueous resin composition; and a substance (c) which absorbs light and generates heat.

Abstract: A method for determining a urea concentration in an aqueous solution containing urea, includes: hydrolyzing the urea in the aqueous solution, measuring an electric conductivity &khgr; of the aqueous solution, and determining the urea concentration in the aqueous solution from the electric conductivity &khgr; using a correlation between the urea concentration and an electric conductivity.

Abstract: Lithographic printing form precursors comprising positive working polymeric coatings on substrates may during storage or transportation undergo undesirable changes in their imaging properties. It has been found that acceptable properties can be restored by carrying out a heat treatment which involves a relatively short heating stage followed by accelerated cooling.

Abstract: In an electron beam lithography system, an outputted main signal is applied directly to deflection plates, whereas an outputted auxiliary signal is applied to the deflection plate through a capacitive coupling for writing a wide strip-like pattern accurately at a high speed. In the electron beam lithography system, a deflection signal is divided into a main signal having a low frequency and a large amplitude and an auxiliary signal having a high frequency and a small amplitude. The main signal is applied directly to deflection plates, and the auxiliary signal is applied to the deflection plate through a capacitor.

Abstract: In an electron beam lithography system, an outputted main signal is applied directly to deflection plates, whereas an outputted auxiliary signal is applied to the deflection plate through a capacitive coupling for thereby writing a wide strip-like pattern accurately at a high speed.

Abstract: A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

Abstract: A process for the synthesis of urea, which comprises subjecting a urea synthesis solution from a urea synthesis column to stripping with a raw material carbon dioxide under a pressure approximately equal to the urea synthesis pressure to separate a major portion of unreacted ammonia and carbon dioxide as a mixed gas from the urea synthesis solution, condensing the mixed gas by indirect heat exchange with the urea synthesis solution from which the mixed gas was separated and that is preferably decompressed to a pressure lower than the urea synthesis pressure, and heating the urea synthesis solution by heat of condensation generated at the time of the condensation of the mixed gas.