Abstract: The present invention allows individual control of an output voltage of a main transformer and an output voltage of a teaser transformer while utilizing output characteristics of the respective transformer when a Scott connected transformer has control equipment arranged on the input side thereof, including first control equipment arranged in one of two phases of the main transformer on the input side in order to control a voltage or a current and second control equipment arranged in one end of a primary coil of the teaser transformer on the input side in order to control a voltage or a current, the control equipment controlling an output voltage of the main transformer and an output voltage of the teaser transformer individually.

Abstract: The present invention is one that heats the inside of the spinning pack in a short period of time while keeping temperature of an outer circumferential part of a spinning pack less than a maximum allowable temperature, and provided with: a magnetic path forming member that forms a magnetic path with a spinning pack arrangement space where the spinning pack is arranged to occupy the space and be positioned intermediate respective ends of the magnetic path forming member that border the space; and a magnetic flux generating winding that is provided so as to be wound to surround the spinning pack arrangement space.

Abstract: The present invention relates to an induction heating apparatus capable of heating a conductive plate member throughout in a widthwise direction. Specifically, the present invention is configured to have flat-shaped coils, each forming a magnetic path in a center portion thereof, provided on upper and lower sides of the conductive plate member so as to heat the conductive plate member and to have circumferential coils provided on right and left end sides of magnetic metal casings through which the circumferential magnetic paths of the flat-shaped coils pass, whereby magnetic paths of the circumferential coils pass through both end portions of the conductive plate member.

Abstract: The present invention provides a mammalian stem cell suspension containing mammalian stem cells and at least one polysaccharide such as trehalose, and the like; a mammalian stem cell aggregation inhibitor containing polysaccharide such as trehalose, and the like; a method of suppressing aggregation of mammalian stem cells, containing suspending the mammalian stem cells in an aqueous physiological solution containing polysaccharide; an inhibitor of a decrease in the survival rate of mammalian stem cells containing polysaccharide such as trehalose and the like; a method of suppressing a decrease in the survival rate of mammalian stem cells, containing suspending the mammalian stem cells in an aqueous physiological solution containing polysaccharides, and the like.

Abstract: A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract: In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.

Abstract: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb<Tc<Ts is satisfied.

Abstract: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb<Tc<Ts is satisfied.

Abstract: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.

Abstract: In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.

Abstract: A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract: In a heating fluid medium passing roller device for heat-treating a object to be processed in contact with the surface of a roller 1, heat exchanger devices 5a, 5b are arranged on a circulating heating fluid medium path, and the heating fluid medium heat-exchanged in the heat exchanger device is passed through the roller 1 having a jacked chamber 1b sealed with a gas-liquid two phase heating medium within its wall to keep the roller 1 at a predetermined temperature. Further, the heating fluid medium passing roller device includes a temperature sensor 13 for detecting the temperature of the heating fluid medium to be supplied into the roller 1 and a temperature sensor 14 for detecting the temperature of the heating fluid medium exhausted from the roller 1. The flow rate of the heating fluid medium to be supplied into the roller is adjusted so that the difference between the temperatures detected by the temperature sensors 13 and 14 is constant.

Abstract: A sheet sorter includes an array of a plurality of sorting trays which are mounted on a sorter body and arranged in a vertical direction and a general-purpose tray which is mounted on the sorter body and is larger than each of the sorting trays in capacity so that it accommodates a larger number of sheets than each of the sorting trays. A tray drive mechanism provided in the sorter body moves up and down the sorting trays and the general-purpose tray so that sheets transferred by a transfer mechanism provided in the sorter body are selectively discharged onto the sorting trays or the general-purpose tray. The array of the sorting trays is positioned above the general-purpose tray. The sorting tray array and the general-purpose tray are normally held in a position where the sheet discharge port of the sheet transfer mechanism is positioned between the lowermost tray of the sorting tray array and the general-purpose tray as seen in a vertical direction.

Abstract: A sheet sorter includes an array of a plurality of sorting trays which are mounted on a sorter body and arranged in a vertical direction and a general-purpose tray which is mounted on the sorter body and is larger than each of the sorting trays in capacity so that it accommodates a larger number of sheets than each of the sorting trays. A tray drive mechanism provided in the sorter body moves up and down the sorting trays and the general-purpose tray so that sheets transferred by a transfer mechanism provided in the sorter body are selectively discharged onto the sorting trays or the general-purpose tray. The array of the sorting trays is positioned above the general-purpose tray. The sorting tray array and the general-purpose tray are normally held in a position where the sheet discharge port of the sheet transfer mechanism is positioned between the lowermost tray of the sorting tray array and the general-purpose tray as seen in a vertical direction.

Abstract: A sheet discharging apparatus includes a conveyor provided at one side of the body of the apparatus, and sorter trays and a large capacity tray provided on the opposing side. Wings are provided each rotatable about a rotation axis, on a discharging side of the conveyor, and a projection is formed in the front side in the sheet conveying direction of each wing. The projection is brought into contact with an urging member provided at a frame of the container which is movable in upward/downward directions. When sorter trays are used, the urging member is separate from the projection, so that upper surface of the wing is below a conveying surface. When the frame and urging member are elevated to use the large capacity tray, the urging member presses the projection upward, and hence wings are elevated to be positioned upper than the conveying surface.