Abstract: The present invention provides an appearance inspection apparatus that allows a user to give precedence to either defect detection performance or throughput. The appearance inspection apparatus allows a user to select the frequency of a digital image signal or the ratio of the frequency of the digital image signal to a sampling rate. Further, a user is allowed to select either throughput improvement or S/N improvement to prioritize.

Abstract: The present invention has a subject to provide an apparatus that optimizes scanning in accordance with circumstances or purposes, reduces distortion of images, and improves throughput, image quality, and defect detection rate by controlling deflection of a charged particle beam in a stage tracking system.

Abstract: A visual inspection apparatus and method using the scanning electron microscope are disclosed. An electron beam is scanned repeatedly on a sample, and an inspection and a reference image are generated by the secondary electrons generated from the sample or reflected electrons. From the differential image between the inspection image and the reference image, a defect is determined. The number of pixels in the generated image along the direction of repetitive scanning by the electron beam can be changed.

Abstract: A visual inspection apparatus and method using the scanning electron microscope are disclosed. An electron beam is scanned repeatedly on a sample, and an inspection and a reference image are generated by the secondary electrons generated from the sample or reflected electrons. From the differential image between the inspection image and the reference image, a defect is determined. The number of pixels in the generated image along the direction of repetitive scanning by the electron beam can be changed.

Abstract: An object of the present invention is to provide an inspection system using a scanning electron microscope that detects a high-precision electron beam image and at the same time, removes restrictions for a low sampling rate, which presents a problem at this point, of an AD converter element and an inspection method.

Abstract: A semiconductor device inspection apparatus having a noise subtraction function includes an electron gun, a stage for holding a sample, a main detector for detecting a signal discharged from the sample, and at least one or more sub detector for detecting noise generated from the sample or apparatus so that there can be obtained an image in which the noise caused by discharge generated on the sample or in the apparatus is removed from the signal. The noise subtraction function subtracts the noise detected by the sub detector from the signal detected by the main detector to remove or reduce the noise from the signal.

Abstract: A pattern inspection method and apparatus in which a charged particle beam is irradiated onto a surface of a specimen on which a pattern is formed, plural sensors simultaneously detect secondary particles emanated from the surface of the specimen by the irradiation, signals outputted from each sensor of the plural sensors which simultaneously detect the secondary particles are added, an image of the surface of the specimen on which the pattern is obtained from the added signals, and the image is processed to detect a defect of the pattern.

Abstract: According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.

Abstract: There is provided a water-soluble flux composition for soldering which is excellent particularly in heat resistance and flux residues after soldering of which can be easily removed by washing with water or warm water. The flux composition for soldering contains a compound of formula (1): wherein R1, R2, R3, Rd4, R5 and R6 independently of one another are a hydrocarbon group or hydrogen atom, and A1, A2 and A3 independently of one another are hydroxy group or an organic group of formula (2): and at least one of A1, A2 and A3 is an organic group of formula (2).

Abstract: A crystalline epoxy resin is modified to provide an epoxy resin composition capable of producing a cured product with excellent cured product properties. The modified epoxy resin composition comprises compound A having in its molecule a functional group represented by formula (1) (where each of R1 and R2 is an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an aralkyl group, a heterocyclic group, or a halogenated, aminated or nitrated derivative thereof) and compound B having a glycidyl group in its molecule The compound A is preferably a compound resulting from replacement of from at least one to at most n glycidyl groups among n glycidyl groups in a molecule (where n is an integer of from 2 to 16) with the functional group of the formula (1). The compound B is preferably a compound having n glycidyl groups (where n is an integer of from 2 to 16) in its molecule.

Abstract: An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.

Abstract: According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.

Abstract: A visual inspection apparatus and method using the scanning electron microscope are disclosed. An electron beam is scanned repeatedly on a sample, and an inspection and a reference image are generated by the secondary electrons generated from the sample or reflected electrons. From the differential image between the inspection image and the reference image, a defect is determined. The number of pixels in the generated image along the direction of repetitive scanning by the electron beam can be changed.

Abstract: A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.

Abstract: According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.

Abstract: An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.

Abstract: Charged-particle beam arrangements (e.g., apparatus and methods) for automatically correcting astigmatism and for height detection.

Abstract: A pattern inspection method and apparatus in which a charged particle beam is irradiated onto a surface of a specimen on which a pattern is formed, plural sensors simultaneously detect secondary particles emanated from the surface of the specimen by the irradiation, signals outputted from each sensor of the plural sensors which simultaneously detect the secondary particles are added, an image of the surface of the specimen on which the pattern is obtained from the added signals, and the image is processed to detect a defect of the pattern.

Abstract: A pattern inspection method which irradiates a charged particle beam onto a surface of a specimen on which a pattern is formed, simultaneously detecting with plural sensors secondary particles emanated from the surface of the specimen by the irradiation, adding signals outputted from each sensor of the plural sensors which simultaneously detected the secondary particles, obtaining an image of the surface of the specimen on which the pattern is formed from the added signals and processing the image to detect a defect of the pattern.

Abstract: A process for producing ?-form tris-(2,3-epoxypropyl)-isocyanurate crystals containing from 2 to 15 wt % of ?-form tris-(2,3-epoxypropyl)-isocyanurate in the interior of the crystals, which comprises the following steps (A), (B), (C) and (D): (A) a step of reacting cyanuric acid with epichlorohydrin to form an addition product of cyanuric acid and epichlorohydrin, followed by dehydrochlorination to obtain a reaction solution containing tris-(2,3-epoxypropyl)-isocyanurate, (B) a step of removing epichlorohydrin from the reaction solution containing tris-(2,3-epoxypropyl)-isocyanurate obtained in step (A), and dissolving the obtained tris-(2,3-epoxypropyl)-isocyanurate in a solvent, (C) a step of gradually cooling the liquid obtained in step (B) at a cooling rate within 20° C./hr for crystallization, followed by filtration to obtain crystals, and (D) a step of washing and drying the crystals obtained in step (C).