Abstract: A data transmission system is provided in which it is possible to perform both of suppressing the degrading of the slew rate and suppressing the ringing even if load capacitance of an input buffer is changed. The data transmission system transmitting data from an output buffer to the input buffer through a trace is provided with first RC parallel circuits connected in series to the trace on a first Printed Circuit Board (PCB) on which the output buffer is mounted, and second RC parallel circuits connected in series to the trace on a second Printed Circuit Board (PCB) on which the input buffer is mounted, and which can be connected and separated to and from the first Printed Circuit Board (PCB).

Abstract: This document provides methods and materials for treating cardiovascular and/or renal diseases. For example, AAV9 vectors designed to express natriuretic polypeptides, nucleic acid molecules encoding natriuretic polypeptides, methods for making AAV9 vectors, and methods for using such vectors or molecules to treat cardiovascular and/or renal diseases are provided.

Abstract: This document provides methods and materials related to differentiating iPS cells into glucose-responsive, insulin-secreting progeny. For example, methods and material for using indolactam V (ILV) and glucagon like peptide-1 (GLP-1) to produce glucose-responsive, insulin-secreting progeny from iPS cells are provided.

Abstract: A slew rate of a signal transmitted between a semiconductor device having a small load capacitance and a semiconductor device having a large load capacitance is improved. When a signal is transmitted to the semiconductor device (for example, a memory device) having the large load capacitance, pre-emphasis is performed, and when a signal is transmitted to the semiconductor device (for example, a memory controller) having the small load capacitance, pre-emphasis is not performed or is slightly performed. By this, when the signal is transmitted to the memory device, blunting in signal rising due to the load capacitance is suppressed, and when the signal is transmitted to the memory controller, ringing due to the reflection of the signal is suppressed, and the slew rate of the data transmission is improved.

Abstract: A signal transmission system is provided which connects a memory controller and a plurality of semiconductor memories. The signal transmission system comprises a semiconductor device arranged between the memory controller and the plurality of memories, in which: the semi-conductor device comprises a control circuit; and the control circuit receives a signal from the semiconductor memory and outputs a control signal to the memory controller in response to the signal from the semiconductor memory.

Abstract: A laminated structure includes an anti-reflection structure having periodic concavo-convex parts on a surface thereof, and a transparent conductive layer formed on the concavo-convex parts. An arbitrary convex part, excluding a convex part located at an outermost side, and six convex parts having distances from the arbitrary convex part that amount to a smallest sum, are arranged to satisfy a condition requiring a connecting part to exist between the arbitrary convex part and each of four convex parts amongst the six convex parts, and a condition requiring a concave part to exist between the arbitrary convex part and each of two remaining convex parts amongst the six convex parts.

Abstract: A lip seal-type shaft seal device that exhibits no leakage when at rest; operates under fluid lubrication and prevents leakage when rotating, including during initial rotation; and enables a balance between seal integrity and lubrication is provided. The device includes a plurality of discontinuous pumping areas for generating pumping action via the relative rotational sliding of a lip seal and a rotating member is formed in the circumferential direction on the outer circumferential surface of the rotating member. The plurality of pumping areas is provided with suction portion of pumping areas operating in a direction in which a sealed fluid is drawn in and discharge portion of pumping areas operating in a direction in which the sealed fluid is expelled. A lip of the lip of the lip seal extends in an axial direction towards an atmosphere side, leaving part of the pumping areas uncovered on a sealed fluid side.

Abstract: An integrally-rotating cylindrical sieve 1 includes a hollow rotating shaft 2, which a driveshaft 21 is inserted into and fixed to, support members 3 radially extended from the rotating shaft 2, a cylindrical sieve body 4 made from a thin plate with a large number of apertures 5 formed therein, such as punching metal, and coupled with the support members 3, and sieve frames 6a and 6b attached to axial ends of the sieve body 4. The rotating shaft 2, the support members 3, the sieve body 4, the sieve frames 6a and 6b, and the driveshaft 21 are coaxially rotated together. The sieve body 4 is a cylindrical corrugated plate having wave crests and wave troughs arranged along its circumference and has a large number of apertures 5 formed in the corrugated plate. This arrangement improves the sieving efficiency of the granular material and effectively prevents potential destruction and cracking of the granular material, thus enhancing the commercial value of the sieved granular material.

Abstract: Disclosed are a wire grid polarizer, which exhibits high polarization, p-polarized light transmittance, and s-polarized light reflectance in the visible light region, and the optical characteristics of which have low angular dependence and wavelength dependence, and a manufacturing method for the same.

Abstract: A seal device where a seal lip reliably maintains shaft sealing relative to high-pressure fluid that is to be sealed and where the equivalent Mises stress occurring in the seal lip is reduced to extend the durable term of the seal lip longer. A backup ring has a tapered section continuously extending from a fixation section of the backup ring and also has a forward end section. A rounded surface (E) with a curvature radius (R-1) is formed at least at a boundary where a surface (D) of the tapered section changes to a surface (F) of the forward end section. A portion of the surface (D) of the tapered surface, which portion is in contact with the rounded surface (E) at the boundary, is a projected curvature surface having a curvature radius greater than the curvature radius (R-1) of the boundary.

Abstract: A signal transmission system is provided which connects a memory controller and a plurality of semiconductor memories. The signal transmission system comprises a semiconductor device arranged between the memory controller and the plurality of memories, in which: the semi-conductor device comprises a control circuit; and the control circuit receives a signal from the semiconductor memory and outputs a control signal to the memory controller in response to the signal from the semiconductor memory.

Abstract: To suppress power consumption and enhance signal quality as compared with the case where first and second semiconductor elements are terminated only by on-chip input termination resistor circuits. A first semiconductor element with a switching function and a second semiconductor element with a switching function are connected to each other with a substrate interconnection, and a resistor element is connected in parallel with the substrate interconnection. The resistor element is placed at an arbitrary position or a branch point on the signal interconnection.

Abstract: To suppress power consumption and enhance signal quality as compared with the case where first and second semiconductor elements are terminated only by on-chip input termination resistor circuits. A first semiconductor element with a switching function and a second semiconductor element with a switching function are connected to each other with a substrate interconnection, and a resistor element is connected in parallel with the substrate interconnection. The resistor element is placed at an arbitrary position or a branch point on the signal interconnection.

Abstract: The negative electrode for lithium-ion secondary battery is used in which a product of tensile strength and thickness of a negative electrode having a negative electrode active material layer containing silicon and silicon oxide as main components is 3.8 to 9.0 N/mm and a value obtained by dividing the product of the tensile strength and the thickness of the negative electrode by a product of tensile strength and thickness of a negative electrode current collector is 1.06 to 1.29.

Abstract: A negative electrode includes a negative electrode active material layer containing a negative electrode active material mainly containing silicon and silicon oxide. In the negative electrode, the ratio of the film thickness of the negative electrode active material layer to the particle size distribution D99 is in the range of 1.2 to 2.0, the value of the D99 is in the range of 7 to 27 ?m, and the negative electrode active material layer has a density ranging from 1.2 to 1.6 g/cm3.

Abstract: A lithium ion secondary battery includes a positive electrode including a positive electrode active material having a composition represented by the formula (1) LixNiyCozMtO2??(1) (wherein the element M is at least one kind selected from the group consisting of Mg, Ba, Al, Ti, Mn, V, Fe, Zr, and Mo and x, y, z, and t satisfy the following formulae: 0.9?x?1.2, 0?y?1.1, 0?z?1.1, and 0?t?1.1), and a negative electrode including a negative electrode active material mainly containing silicon and silicon oxide, and having an absorbance of 0.01 to 0.035 at 2110±10 cm?1 according to an FT-IR method.

Abstract: A negative electrode active material mainly contains silicon and silicon oxide. In the negative electrode active material, an Ar-laser Raman spectrum thereof includes a peak A corresponding to 950±30 cm?1 and a peak B corresponding to 480±30 cm?1, and an intensity ratio of the peak B to the peak A (B/A) is in the range of 1 to 10.

Abstract: In the invention, a lithium-ion secondary battery, in which a value obtained by dividing average 3% modulus strength of a separator by average 3% modulus strength of a negative electrode including a negative electrode active material layer containing silicon and silicon oxide as a main component is 0.079 or less, is used.

Abstract: A slew rate of a signal transmitted between a semiconductor device having a small load capacitance and a semiconductor device having a large load capacitance is improved. When a signal is transmitted to the semiconductor device (for example, a memory device) having the large load capacitance, pre-emphasis is performed, and when a signal is transmitted to the semiconductor device (for example, a memory controller) having the small load capacitance, pre-emphasis is not performed or is slightly performed. By this, when the signal is transmitted to the memory device, blunting in signal rising due to the load capacitance is suppressed, and when the signal is transmitted to the memory controller, ringing due to the reflection of the signal is suppressed, and the slew rate of the data transmission is improved.

Abstract: Provided is a process for easily producing a wire grid polarizer showing a high polarization separation ability in the visible light region and having an improved transmittance in a short wavelength region.