Abstract: A semiconductor substrate that prevents formation of particles from an edge part of the substrate. The substrate contains an on-substrate oxide film and an SOI layer stacked on the oxide film. A molten layer is formed on the edge part of the on-substrate oxide film and the SOI layer by mixing the SOI layer and the on-substrate oxide film to cover the edge part. An epitaxial layer may also be formed on the edge part of the on-substrate oxide film and the SOI layer to cover the edge part.

Abstract: A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.

Abstract: A dicing lines is placed to overlap a slip created in a wafer, so that the slip extends within the dicing line.

Abstract: At a data transfer device for transferring a request message from a first communication device to a second communication device, and transferring a response message containing a response data from the second communication device to the first communication device, an identifier to be allocated to the response data contained in the response message is generated according to a content of the response data, and a re-direct response message for re-directing the first communication unit to a URL containing the identifier is transmitted to the first communication device, instead of transmitting the response message, when the response message is received from the second communication device, and the response message containing the response data stored in the memory in correspondence to the identifier contained in the URL is transmitted when the request message for the URL containing the identifier is received from the first communication device.

Abstract: In a client server system, the network load is reduced by using the fingerprint compression and the differential compression, by providing the proxy server at the server side and using the general purpose browser at the client side. without requiring a separate proxy server at the client side. The client downloads and installs a fingerprint cache processing engine as a plug-in.

Abstract: An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.

Abstract: In each pixel region 41 of a liquid crystal TFT array substrate, formed are an ITO transparent electrode 43, a gate line 48, a data line 46, a TFT active device 45, an identification mark 50 and the like. The identification mark 50 is provided by forming a bar code made of silver on the gate line 48. Since the identification mark 50 is formed within the pixel region 41, a transistor to be repaired can be surely identified, for example, by detecting the identification mark in a repair processing of the TFT array substrate. Furthermore, in an information processing apparatus for inputting figures and characters onto a screen using a laser pen, a locus of the laser pen can be accurately specified by specifying a position of a pixel region from an identification mark detected by the laser pen, and the figures and the characters input can be recognized minutely.

Abstract: An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.

Abstract: In a data transfer device, presence/absence of a prescribed header in the received request message is analyzed, and information indicating the presence/absence of the prescribed header, or information indicating either presence or absence of the prescribed header when the prescribed header is either present or absent as a result of analysis is stored. Then, when a reply message corresponding to the request message is received, the presence/absence of the prescribed header is checked by referring to the stored information, and the reply message is transferred according to a result of checking.

Abstract: A liquid crystal display panel part group composed of a plurality of panel parts such as an array cell, a optical system sheet family, a light guide plate, a lamp reflector, and a lamp, and a liquid crystal display panel is enveloped in a film for laminating the parts. This film may be provided so as to cover the whole of the liquid crystal display panel part group and the film may have an opening. In order to adjust the positions of the parts, convex and concave portions are provided in the liquid crystal display panel parts.

Abstract: A defect inspecting device for a wafer is built in a positioning device for positioning a wafer 1, as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base 2 while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit 14 and a control unit 15 judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer 1.

Abstract: In a data transfer scheme using a caching technique and/or a compression technique which is capable of reducing the network load of a network connecting between data transfer devices, correspondences between data and their names are registered at the data transfer devices and the corresponding names are transferred, instead of transferring the data, for those data for which the correspondences are registered, so that it is possible to reduce the amount of transfer data among the data transfer devices. Server side data transfer devices and client side data transfer devices can be provided in multiple-to-one, one-to-multiple, or multiple-to-multiple manners.

Abstract: A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.

Abstract: In a data transfer scheme using a caching technique and/or a compression technique which is capable of reducing the network load of a network connecting between data transfer devices, correspondences between data and their names are registered at the data transfer devices and the corresponding names are transferred, instead of transferring the data, for those data for which the correspondences are registered, so that it is possible to reduce the amount of transfer data among the data transfer devices. Even when the name corresponding to the data is not registered so that it is impossible to transfer the corresponding name instead of transferring the data, it is possible to reduce the amount of transfer data among the data transfer devices by transferring the compressed data in which this data is expressed in a compressed form by utilizing the name corresponding to the registered reference data.

Abstract: In a data transfer scheme using a caching technique and/or a compression technique which is capable of reducing the network load of a network connecting between data transfer devices, correspondences between data and their names are registered at the data transfer devices and the corresponding names are transferred, instead of transferring the data, for those data for which the correspondences are registered, so that it is possible to reduce the amount of transfer data among the data transfer devices.

Abstract: An intermediary server apparatus relays an information readout request from a terminal to an origin server, and returns information provided by the origin server to the terminal. The intermediary server apparatus previously assigns a first user ID to a user to discriminate each user. The origin server assigns a second user ID to the user to identify the information readout request. In the intermediary server apparatus, a memory correspondingly stores the first user ID and the second user ID. A communication unit retrieves the second user ID corresponding to the first user ID from said memory in case of receiving the information readout request including the first user ID from the terminal, and sends the information readout request including the second user ID to the origin server.

Abstract: An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.

Abstract: Fluorine-containing polyfunctional (meth)acrylate represented by the formula (1), a monomer composition containing the (meth)acrylate, a low refractivity material prepared by curing the monomer composition, and a reflection reducing film provided with the low refractivity material. wherein R1, R2, R3, and R4 are the same or different groups, and each stands for a hydrogen atom, an acryloyl group, or a methacryloyl group, at least one of R1 and R2 and at least one of R3 and R4 stand for an acryloyl group or a methacryloyl group, R stands for a fluoroalkylene group having 2 to 12 carbon atoms and 2 or more fluorine atoms.

Abstract: An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.

Abstract: Fluorine-containing polyfunctional (meth)acrylate represented by the formula (1), as well as a composition, a low refractivity material and a reflection reducing film in which the (meth)acrylate is utilized: ##STR1## wherein X stands for a fluoroalkyl group of C1-14 having 3 or more F, or a fluorocycloalkyl group of C3-14 having 4 or more F; Y.sup.1, Y.sup.2, and Y.sup.3 stand for H, an acryloyl group or a methacryloyl group, and at least two of Y.sup.1, Y.sup.2, and Y.sup.3 stand for an acryloyl group or a methacryloyl group; Z stands for H or an alkyl group of C1-3; and n and m is an integer of 0 or 1, and n+m=1.