Abstract: A bidirectional switch element includes: a substrate; an AlzGa1-zN layer; an AlbGa1-bN layer; a first source electrode; a first gate electrode; a second gate electrode; a second source electrode; a p-type Alx1Ga1-x1N layer; a p-type Alx2Ga1-x2N layer; an AlyGa1-yN layer; and an AlwGa1-wN layer. The AlzGa1-zN layer is formed over the substrate. The AlbGa1-bN layer is formed on the AlzGa1-zN layer. The AlyGa1-yN layer is interposed between the substrate and the AlzGa1-zN layer. The AlwGa1-wN layer is interposed between the substrate and the AlyGa1-yN layer and has a higher C concentration than the AlyGa1-yN layer.

Abstract: A bidirectional switch includes: a first lateral transistor including a first semiconductor layer on the surface of a first conductive layer; a second lateral transistor including a second semiconductor layer on the surface of a second conductive layer; a connection member; a first conductor member; and a second conductor member. The connection member connects the first lateral transistor and the second lateral transistor together in anti-series. The first conductor member electrically connects the first source electrode of the first lateral transistor to the first conductive layer. The second conductor member electrically connects the second source electrode of the second lateral transistor to the second conductive layer.

Abstract: A semiconductor device includes a supporting substrate, a semiconductor chip, a resin member, and a heat-dissipating metal layer. The supporting substrate has a first surface and a second surface located opposite from each other in a thickness direction defined for the supporting substrate. The semiconductor chip includes a plurality of electrodes. The semiconductor chip is bonded to the supporting substrate on one side thereof with the first surface. The resin member has a first surface and a second surface located opposite from each other in a thickness direction defined for the resin member. The resin member covers at least a side surface of the supporting substrate and a side surface of the semiconductor chip. The heat-dissipating metal layer is arranged in contact with the supporting substrate and the resin member to cover the second surface of the supporting substrate and the second surface of the resin member at least partially.

Abstract: A position coordinate difference computing unit (5a to 5c) calculates position coordinate differences between position coordinates of the output digital signals and position coordinates of the input digital signals adjacent to the position coordinates. An FIR coefficient memory (13a to 13c) stores FIR coefficients of an FIR-LPF and outputs FIR coefficients corresponding to position coordinate differences between a fixed number of the output digital signals adjacent to the position coordinates of the output digital signals and the output digital signals. A control unit (11) supplies a group of the FIR coefficients and a group of the input digital signals corresponding to the respective position coordinate differences to the parallel FIR calculator (4) in predetermined order when the position coordinate differences corresponding to two or more different output digital signals are concurrently computed.

Abstract: To provide an optical module and a method for aligning the optical module with which alignment can be easily performed. An optical module includes first optical element sections and a second optical element section optically joined to the first optical element sections. Each first optical element section includes an optical conversion element, a ferrule having a distal end being in contact with and optically joined to the second optical element section, and a first optical system disposed in a position where the ferrule and the optical conversion element are optically adjusted. The second optical element section includes joining sections in contact with and joined to, in joining parts, the distal ends of the ferrules, a wavelength multiplexing optical element optically joined to the optical conversion elements, and second optical systems respectively disposed in positions where the wavelength multiplexing optical elements and the joining parts are optically adjusted.

Abstract: The invention aims to provide a method of screening for a therapeutic drug for cancer as a molecular-targeted drug targeting some protein from a number of candidate target proteins, without identifying the true target protein. In particular, the invention provides a method of screening for a therapeutic drug for cancer, including (i) a step of expressing an exogenous cell regulatory factor in a target cancer cell under contact or no contact with a test substance, (ii) a step of confirming change in the cancer cell, and (iii) a step of selecting the test substance as a therapeutic drug for cancer when the change of cancer cell increased under contact with the test substance as compared to no contact therewith.

Abstract: A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor used to read out the signal charge from the plurality of pixels. The transistor includes a first silicon oxide film, a semiconductor layer, and a second silicon oxide film laminated in order from a substrate side, the semiconductor layer including an active layer, and a first gate electrode disposed to face the semiconductor layer, with the first or the second silicon oxide film interposed therebetween, and the first or the second silicon oxide film or both include an impurity element.

Abstract: There is provided a radiation image pickup unit including: a plurality of pixels each configured to generate a signal charge based on a radiation; a device substrate including a photoelectric conversion element for each pixel; a wavelength conversion layer provided on a light incident side of the device substrate, and configured to convert a wavelength of the radiation into other wavelength; and a partition wall separating the wavelength conversion layer for each pixel. The radiation image pickup unit is configured to allow a gap between the wavelength conversion layer and the device substrate to be equal to or larger than a threshold or equal to or smaller than the threshold, the threshold being preset based on a spatial frequency of an image pickup target.

Abstract: To provide an optical module and a method for aligning the optical module with which alignment can be easily performed. An optical module includes first optical element sections and a second optical element section optically joined to the first optical element sections. Each first optical element section includes an optical conversion element, a ferrule having a distal end being in contact with and optically joined to the second optical element section, and a first optical system disposed in a position where the ferrule and the optical conversion element are optically adjusted. The second optical element section includes joining sections in contact with and joined to, in joining parts, the distal ends of the ferrules, a wavelength multiplexing optical element optically joined to the optical conversion elements, and second optical systems respectively disposed in positions where the wavelength multiplexing optical elements and the joining parts are optically adjusted.

Abstract: A semiconductor device including a substrate, at least one gate electrode, at least two silicon oxide layers comprising a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than or equal to a thickness of the second silicon oxide layer, and a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer. Also, an image pick-up device and a radiation imaging device including the semiconductor device.

Abstract: A nitride semiconductor device of the present invention has a source-electrode-side insulator protection film layer disposed between a source electrode and a drain electrode on a second nitride semiconductor layer and formed at least partially covering the source electrode, a drain-electrode-side insulator protection film layer disposed separately from the source-electrode-side insulator protection film layer and formed at least partially covering the drain electrode, and a gate layer formed in contact with the second nitride semiconductor layer between the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and made of a p-type metal oxide semiconductor, and the gate layer has regions opposite to the second nitride semiconductor layer across each of the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and a region in contact with the second nitride semiconductor layer.

Abstract: A power control device 10 is a power control device that controls power supply from an outside to a plurality of power consuming devices 50, and includes a power supply control device 20 that obtains consumed power values of the plurality of power consuming devices 50 and predicts consumed power values, and controls power supply to the power consuming devices 50 when a prediction value of a total of the obtained consumed power values based on the prediction exceeds a predetermined power value.

Abstract: There is provided a power control apparatus including an input unit to which attribute information regarding a type of generation of power is input, a determination unit configured to determine the type of generation of the power corresponding to the attribute information according to the attribute information, and a power control unit configured to control use of the power according to a determination result by the determination unit.

Abstract: A radiation image-pickup device includes: a plurality of pixels each configured to generate signal charge based on radiation; and a field effect transistor used to read the signal charge from each of the plurality of pixels, wherein the field effect transistor includes a semiconductor layer including an active layer and a low concentration impurity layer formed to be adjacent to the active layer, and a first and a second gate electrode disposed to face each other with the active layer interposed therebetween, and one or both of the first and the second gate electrodes are provided in a region not facing the low concentration impurity layer.

Abstract: A semiconductor device includes a semiconductor switch, a first rectifier circuit, and a second rectifier circuit. The semiconductor switch, the first rectifier circuit, and the second rectifier circuit are integrated on a common board. On the board, a first output terminal of the first rectifier circuit is coupled to a first gate terminal of the semiconductor switch, and a first output reference terminal of the first rectifier circuit is coupled to a first source terminal of the semiconductor switch. On the board, a second output terminal of the second rectifier circuit is coupled to a second gate terminal of the semiconductor switch, and a second output reference terminal of the second rectifier circuit is coupled to a second source terminal of the semiconductor switch.

Abstract: A first look-up table (10) outputs a result of dividing a horizontal component of a pixel address in the block by number of pixels in a horizontal component of the cell. A second look-up table (12) outputs a result of dividing a vertical component of a pixel address in the block by number of pixels in a vertical component of the cell. A third look-up table (14) outputs a residue as a result of dividing a horizontal component of a pixel address in the block by number of pixels in a horizontal component of the cell. A fourth look-up table (16) outputs a residue as a result of dividing a vertical component of a pixel address in the block by number of pixels in a vertical component of the cell. The output values of the first and second look-up tables (10,12) are addresses of the cell for burst access to the memory. The output values of the third and fourth look-up tables (14,16) are used as pixel addresses in the cell.

Abstract: An image pickup unit includes: an image pickup section including a plurality of pixels each including a photoelectric conversion device and a field effect transistor; a drive section configured to control a voltage to be applied to the transistor to perform reading-out driving of a signal charge accumulated in the pixel; and a correction section configured to correct a voltage value used to drive the transistor, the transistor including first and second gate electrodes arranged to face each other with a semiconductor layer interposed in between, the drive section being configured to perform ON/OFF control of the transistor by applying first and second voltages to the first and second gate electrodes of the transistor, respectively, and the correction section being configured to correct a voltage value of one or both of the first and second voltages in accordance with a shift amount of a threshold voltage of the transistor.

Abstract: There is provided a radiation image pickup unit including a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor for readout of the signal charge from the plurality of pixels, the transistor including a first silicon oxide film, a semiconductor layer including an active layer, and a second silicon oxide life stacked in order from substrate side, and a first gate electrode disposed to face the semiconductor layer with one of the first and the second silicon oxide films in between. The second silicon oxide film has a thickness equal to or larger than a thickness of the first silicon oxide film.

Abstract: There is provided a radiation image pickup unit including: a plurality of pixels each configured to generate a signal charge based on a radiation; a device substrate including a photoelectric conversion element for each pixel; a wavelength conversion layer provided on a light incident side of the device substrate, and configured to convert a wavelength of the radiation into other wavelength; and a partition wall separating the wavelength conversion layer for each pixel. The radiation image pickup unit is configured to allow a gap between the wavelength conversion layer and the device substrate to be equal to or larger than a threshold or equal to or smaller than the threshold, the threshold being preset based on a spatial frequency of an image pickup target.

Abstract: An image pickup unit includes: a plurality of pixels each including a photoelectric conversion device and a field-effect transistor. Each of the pixels includes a light-blocking layer in a peripheral region of the photoelectric conversion device, and the light-blocking layer is maintained to a predetermined electric potential.