Abstract: A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor used to read out the signal charge from the plurality of pixels. The transistor includes a first silicon oxide film, a semiconductor layer, and a second silicon oxide film laminated in order from a substrate side, the semiconductor layer including an active layer, and a first gate electrode disposed to face the semiconductor layer, with the first or the second silicon oxide film interposed therebetween, and the first or the second silicon oxide film or both include an impurity element.

Abstract: An image pickup unit includes: an image pickup section including a plurality of pixels, the pixels each including a photoelectric transducer and a field-effect transistor; and a drive section switching the transistor between an on operation and an off operation to perform a read operation and a reset operation of a signal charge accumulated in each of the pixels. The transistor includes a first gate electrode and a second gate electrode with a semiconductor layer in between, the drive section applies a first voltage and a second voltage to the first gate electrode and the second gate electrode of the transistor, respectively, to switch the transistor between the on operation and the off operation, and the drive section adjusts timings of switching the first and second voltages between an on-voltage and an off-voltage, on-voltage values of the first and second voltages, or both thereof to be different from each other.

Abstract: There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less.

Abstract: An image pickup device that includes: a pixel section including a plurality of pixels each configured to generate a signal charge based on radiation; a first field-effect transistor provided in the pixel section; and a second field-effect transistor provided in a peripheral circuit section of the pixel section. The first transistor has a threshold voltage and the second transistor has a threshold voltage that are different from each other.

Abstract: An image pickup unit includes: an image pickup section including a plurality of pixels each including a photoelectric conversion device and a field effect transistor; a drive section configured to control a voltage to be applied to the transistor to perform reading-out driving of a signal charge accumulated in the pixel; and a correction section configured to correct a voltage value used to drive the transistor, the transistor including first and second gate electrodes arranged to face each other with a semiconductor layer interposed in between, the drive section being configured to perform ON/OFF control of the transistor by applying first and second voltages to the first and second gate electrodes of the transistor, respectively, and the correction section being configured to correct a voltage value of one or both of the first and second voltages in accordance with a shift amount of a threshold voltage of the transistor.

Abstract: An information processing apparatus, method and computer program product identify a local region of an image, and changes the content of the local region into one of other image data and text. A special process is performed on the local image data of the local region that changes the local image data to different visually recognizable image data. The image data or text is then inserted into the local region of the image.

Abstract: There are provided a radiation image pickup apparatus that may suppress deterioration of the transistor characteristic in the circuit in the periphery of the pixel section, and a radiation image pickup/display system including the apparatus. The radiation image pickup apparatus includes a pixel section provided on a substrate and having photoelectric conversion elements, a circuit section provided in the periphery of the pixel section on the substrate to drive the pixel section, and a wavelength conversion layer provided on the pixel section to convert a wavelength of radiation into a predetermined wavelength within a sensitivity range of the photoelectric conversion elements. The circuit section is provided in a region not facing an end of the wavelength conversion layer.

Abstract: An image pickup unit includes: a plurality of pixels each including a photoelectric conversion device and a field-effect transistor; and a readout control line and a signal line that are disposed in a peripheral region of the photoelectric conversion device and are connected to the transistor. The readout control line includes a first wiring layer and a second wiring layer that are laminated and are electrically connected to each other. The first wiring layer is electrically connected to a gate electrode of the transistor, and the second wiring layer is provided in a same layer as the signal line.

Abstract: A first look-up table (10) outputs a result of dividing a horizontal component of a pixel address in the block by number of pixels in a horizontal component of the cell. A second look-up table (12) outputs a result of dividing a vertical component of a pixel address in the block by number of pixels in a vertical component of the cell. A third look-up table (14) outputs a residue as a result of dividing a horizontal component of a pixel address in the block by number of pixels in a horizontal component of the cell. A fourth look-up table (16) outputs a residue as a result of dividing a vertical component of a pixel address in the block by number of pixels in a vertical component of the cell. The output values of the first and second look-up tables (10,12) are addresses of the cell for burst access to the memory. The output values of the third and fourth look-up tables (14,16) are used as pixel addresses in the cell.

Abstract: A rubber composition for a tire containing 100 parts by weight of a rubber, 1 to 30 parts by weight of a polyether (E1) having the formula (I): R1—{(OCH2CH2CH2CH2)m(OA)n—OH}q??(I) wherein R1 is a residue of a C1 to C24 compound having 1-6 hydroxyl groups, from which at least one hydroxyl group is removed, A Ls a C2 to C24 alkylene group other than a 1,4-butylene group, q is an integer of 1 to 6, and m and n are independently integers of 1 to 600, and/or the derivative thereof (E2) and 10 to 180 parts by weight of a filler, which is excellent in processability, silica dispersability abrasion resistance and wet braking performance, etc.

Abstract: An image pickup unit includes: a plurality of pixels each including a photoelectric conversion device and a field-effect transistor; and a readout control line and a signal line that are disposed in a peripheral region of the photoelectric conversion device and are connected to the transistor. The readout control line includes a first wiring layer and a second wiring layer that are laminated and are electrically connected to each other. The first wiring layer is electrically connected to a gate electrode of the transistor, and the second wiring layer is provided in a same layer as the signal line.

Abstract: An image pickup unit includes: a plurality of pixels each including a photoelectric conversion device and a field-effect transistor. Each of the pixels includes a light-blocking layer in a peripheral region of the photoelectric conversion device, and the light-blocking layer is maintained to a predetermined electric potential.

Abstract: A device for image sensing includes a photoelectric conversion unit and at least one transistor. The photoelectric conversion unit is configured to convert incident electromagnetic radiation into an electric signal. The at least one transistor includes a first gate electrode and a second gate electrode above the first gate electrode. The first gate electrode and the second gate electrode do not overlap each other within a non-overlapping region.

Abstract: A nitride semiconductor device includes a substrate, and a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, and a fourth nitride semiconductor layer sequentially formed on the substrate. A channel is formed in the third nitride semiconductor layer, and includes carriers accumulated near an interface between the third nitride semiconductor layer and the fourth nitride semiconductor layer. The second nitride semiconductor layer has a band gap larger than that of the third nitride semiconductor layer. The first nitride semiconductor layer has a band gap equal to or larger than that of the second nitride semiconductor layer, and has a carbon concentration higher than that of the second nitride semiconductor layer.

Abstract: Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film.

Abstract: The present invention includes: a step of creating at least a play list including reproduction start times of the display terminal devices (1) and acquisition destination data indicating acquisition destinations of the creative data; and a step of transmitting the play list and the creative data to the display terminal devices (1) via the normal relay server devices (30) and the super relay server devices (20). The play list creating step creates the play list by determining the acquisition destination data in such a manner that the creative data is distributed preferentially to the super relay server devices (20) rather than to the normal relay server devices (30) and that the normal relay server devices (30) acquire the creative data from the super relay server devices (20). Because of this, the load on distribution devices for distributing creative data is reduced.

Abstract: A display device includes a display unit, a contactless communication unit provided such that at least a part thereof overlaps with the display unit or is provided near the display unit and carries out contactless communication with plural kinds of IC cards, a storage that stores announcement data relating to the kinds of the respective IC cards, a controller that selects the kinds of IC cards, and an operation component for further selection of the kind of one IC card from the kinds of IC cards selected by the controller. The announcement data stored in the storage are displayed on the display unit before readout of the kinds of IC cards by the contactless communication unit. The kinds of IC cards with which contactless communication is possible are selected by the controller, and the kind of one IC card is further selected by the operation component.

Abstract: There is provided a power control apparatus including an input unit to which attribute information regarding a type of generation of power is input, a determination unit configured to determine the type of generation of the power corresponding to the attribute information according to the attribute information, and a power control unit configured to control use of the power according to a determination result by the determination unit.

Abstract: An image processing device carries out processing in a processing unit of 3-blocks. Data of 192(=64×3)-pixels is required in the processing of 3-blocks. This is an amount of data corresponding to 16-cells. When 3-blocks and 16-cells are arranged along an scanning direction of an image, both ends of them in the scanning direction are aligned.

Abstract: A nitride semiconductor element includes: a strain suppression layer formed on a silicon substrate via an initial layer; and an operation layer formed on the strain suppression layer. The strain suppression layer includes a first spacer layer, a second spacer layer formed on and in contact with the first spacer layer, and a superlattice layer formed on and in contact with the second spacer layer. The first spacer layer is larger in lattice constant than the second spacer layer. The superlattice layer has first layers and second layers smaller in lattice constant than the first layers stacked alternately on top of one another. The average lattice constant of the superlattice layer is smaller than the lattice constant of the first spacer layer and larger than the lattice constant of the second spacer layer.