Abstract: According to the present invention, when the traveling of an automatic guided vehicle is optically controlled, a traveling controlling means containing a luminescent compound satisfying the following formula (1) is placed in a predetermined range for traveling of the automatic guided vehicle: A−B≧150 nm  (1) wherein, A represents the minimum wavelength end (nm) of the luminescent compound, and B represents the maximum wavelength end (nm) of an irradiation light used for the traveling controlling.

Abstract: An object of the invention is to provide a preparation process of a semiconductor wafer, in which breakage of the wafer on grinding the back surface of the wafer and on peeling the adhesive tape is prevented, and the operation time can be reduced. The preparation process of a semiconductor wafer comprises the steps of: adhering an adhesive tape on a front surface of a semiconductor wafer; grinding a back surface of the semiconductor wafer by a grinding machine; peeling the adhesive tape; and cleaning the front surface of the semiconductor wafer, wherein an adhesive tape having heat shrinkability is used as the adhesive tape, and after grinding the back surface of the semiconductor wafer, warm water at a temperature of from 50 to 99.degree. C. is poured to peel the adhesive tape in a wafer cleaning machine, and the front surface of the semiconductor wafer is cleaned in the wafer cleaning machine.

Abstract: A polycrystalline layer is formed on a surface of a substrate and metal electrode layers are formed thereon to be opposed to each other. The polycrystalline silicon layer includes an exposed region exposed from the metal electrode layers, and this exposed region includes low resistance regions extending under the metal electrode layers to be in a pair, and a high resistance region having a high sheet resistance defined between the low resistance regions. At least one of the low resistance regions is so trimmed as to adjust heat generation from the high resistance region.

Abstract: A polycrystalline layer is formed on a surface of a substrate and metal electrode layers are formed thereon to be opposed to each other. The polycrystalline silicon layer includes an exposed region exposed from the metal electrode layers, and this exposed region includes low resistance regions extending under the metal electrode layers to be in a pair, and a high resistance region having a high sheet resistance defined between the low resistance regions. At least one of the low resistance regions is so trimmed as to adjust heat generation from the high resistance region.

Abstract: A method of producing an ink jet print head includes the steps of forming separate ink paths with a predetermined pattern on a head base; fixing a vibration plate to a separate ink path side of the head base; temporarily fixing a piezoelectric element to a dummy substrate; patterning the piezoelectric element in accordance with the pattern of the separate ink paths of the head base to form separate piezoelectric elements: sticking a piezoelectric element side of the dummy substrate to the vibration plate so that the separate piezoelctric elements on the dummy substrate respectively correspond to the separate ink paths of the head base; and removing the dummy substrate.