Abstract: An electronic device includes: a flexible substrate, a device portion supported on the flexible substrate, and a driver circuit portion; and a flexible tube having a water vapor transmission rate of less than 10?3 g/(m2·24 h) and an oxygen transmission rate of less than 10?2 ml/(m2·24 h·MPa), wherein: the flexible tube forms a first seal structure and a second seal structure at both ends thereof, and has a sealed space therein; a part of the flexible substrate and the device portion are inside the sealed space; and a rest of the flexible substrate, other than the part, is outside the sealed space.

Abstract: A method includes a recess forming process of forming a recess in a part of a first substrate, a resin film forming process of forming a resin film having flexibility within the recess, a metal line forming process of forming metal lines continuously on another part of the first substrate and the resin film, a pattern forming process of forming thin film patterns on the other part of the first substrate, a bonding process of disposing sealant the first substrate to surround the thin film patterns and bonding the first substrate and a second substrate, a second substrate removing process of removing a section of the second substrate outside the sealant, and a first substrate removing process of separating and removing at least a section of the first substrate outside the sealant from the resin film.

Abstract: An aim of the present invention is to reduce manufacturing costs and lower the electrical resistance of composite metal electrodes while lowering the contact resistance of the composite metal electrodes with respect to an organic semiconductor film. A TFT (semiconductor device) of the present invention includes an organic semiconductor film formed from an organic semiconductor material, and a source electrode and a drain electrode that are composite metal electrodes that contact the organic semiconductor film. The source electrode and the drain electrode are configured such that a low-resistance metal material that makes ohmic contact with the organic semiconductor film, the contact resistance thereof being lower than that of a base metal material formed of a metal material, is mixed with the base metal material, and the low-resistance metal material is disposed so as to be exposed at least at a contact surface with the organic semiconductor film.

Abstract: An electronic device includes: a flexible substrate, a device portion supported on the flexible substrate, and a driver circuit portion; and a flexible tube having a water vapor transmission rate of less than 10?3 g/(m2·24 h) and an oxygen transmission rate of less than 10?2 ml/(m2·24 h·MPa), wherein: the flexible tube forms a first seal structure and a second seal structure at both ends thereof, and has a sealed space therein; a part of the flexible substrate and the device portion are inside the sealed space; and a rest of the flexible substrate, other than the part, is outside the sealed space.

Abstract: An aim of the present invention is to reduce manufacturing costs and lower the electrical resistance of composite metal electrodes while lowering the contact resistance of the composite metal electrodes with respect to an organic semiconductor film. A TFT (semiconductor device) of the present invention includes an organic semiconductor film formed from an organic semiconductor material, and a source electrode and a drain electrode that are composite metal electrodes that contact the organic semiconductor film. The source electrode and the drain electrode are configured such that a low-resistance metal material that makes ohmic contact with the organic semiconductor film, the contact resistance thereof being lower than that of a base metal material formed of a metal material, is mixed with the base metal material, and the low-resistance metal material is disposed so as to be exposed at least at a contact surface with the organic semiconductor film.

Abstract: On a resin substrate (2) there are laminated, in the stated order, a conductive layer in which a bridge electrode (3b) and leads are formed, a first interlayer insulating layer (4), and an electrode layer that allows through visible light forming a unit electrode (5XU) of a drive electrode line (5X) and a unit electrode (5YU) of a sensing electrode line (5Y). It is accordingly possible to realize a touch panel substrate (1) capable of minimizing any increases in thickness, decreases in transmittance, complexity of terminal portions, and deterioration in optical characteristics.

Abstract: A thin film transistor includes: a gate electrode; a gate insulating layer that covers the gate electrode; a source electrode and a drain electrode that are provided on the gate insulating layer; and an organic semiconductor layer that has a channel region between the source electrode and the drain electrode. The source electrode and the drain electrode each include a first conductive layer that increases adhesion with the gate insulating layer; a second conductive layer that has low electrical resistance; and a third conductive layer that make ohmic contact with the organic semiconductor layer. The third conductive layer has a first contact surface that contacts the gate insulating layer, and a second contact surface that contacts a side face of the first conductive layer and a side face of the second conductive layer facing the channel region.

Abstract: For simplification of a structure and a manufacturing process of an element, and reduction of manufacturing cost, the present disclosure provides a light-receiving device including: a photoelectric conversion element; and an active element, wherein the active element includes at least one of a reset element configured to reset the photoelectric conversion element, an amplifier element configured to amplify a detection signal based on the photoelectric conversion element, or a selection element configured to selectively output the detection signal based on the photoelectric conversion element, and the photoelectric conversion element and at least part of the active element are formed by using an identical organic semiconductor material or an identical high molecular functional material.

Abstract: A display device includes a TFT substrate (30) containing a transparent first resin substrate (11) having the heat resistance and a plurality of TFTs (5) disposed on the first resin substrate (11) and a counter-substrate (50) containing a transparent second resin substrate (41) having the heat resistance and being disposed opposing to the TFT substrate (30), wherein the first resin substrate (11) and the second resin substrate (41) have a thickness of 5 ?m or more and 20 ?m or less and a birefringence of 0.002 or more and 0.1 or less.

Abstract: The thickness of a rear surface-side inorganic film (9) formed from the same material as that of each of front surface-side inorganic films (11, 13, and 16) and provided at a rear surface side of a resin substrate (10) having a heat resistance is set in a predetermined range with respect to the total thickness of the front surface-side inorganic films (11, 13, and 16) so that the curvature diameter calculated based on the linear elastic modulus, the coefficient of linear expansion, and the thickness of the resin substrate (10); the linear elastic moduli, the coefficients of linear expansion, and the total thickness of the front surface-side inorganic films (11, 13, and 16); and the linear elastic modulus, the coefficient of linear expansion, and the thickness of the rear surface-side inorganic film (9) is 20 mm or more or ?20 mm or less.

Abstract: For simplification of a structure and a manufacturing process of an element, and reduction of manufacturing cost, the present disclosure provides a light-receiving device including: a photoelectric conversion element; and an active element, wherein the active element includes at least one of a reset element configured to reset the photoelectric conversion element, an amplifier element configured to amplify a detection signal based on the photoelectric conversion element, or a selection element configured to selectively output the detection signal based on the photoelectric conversion element, and the photoelectric conversion element and at least part of the active element are formed by using an identical organic semiconductor material or an identical high molecular functional material.

Abstract: On a resin substrate (2) there are laminated, in the stated order, a conductive layer in which a bridge electrode (3b) and leads are formed, a first interlayer insulating layer (4), and an electrode layer that allows through visible light forming a unit electrode (5XU) of a drive electrode line (5X) and a unit electrode (5YU) of a sensing electrode line (5Y). It is accordingly possible to realize a touch panel substrate (1) capable of minimizing any increases in thickness, decreases in transmittance, complexity of terminal portions, and deterioration in optical characteristics.

Abstract: A liquid crystal display device (1) includes a plastic substrate (6) having flexibility, and a TFT substrate (2) formed on the plastic substrate (6) and including a display element layer (7) having a TFT. The thickness of the plastic substrate (6) is 5-20 ?m, and the relationship 0?D?(2800×S?1.13)/T is satisfied, where The is the thickness [?m] of the plastic substrate (6), S is the linear expansion coefficient [ppm/K] of resin forming the plastic substrate (6), and D is the elasticity modulus [GPa] of the resin.

Abstract: The thickness of a rear surface-side inorganic film (9) formed from the same material as that of each of front surface-side inorganic films (11, 13, and 16) and provided at a rear surface side of a resin substrate (10) having a heat resistance is set in a predetermined range with respect to the total thickness of the front surface-side inorganic films (11, 13, and 16) so that the curvature diameter calculated based on the linear elastic modulus, the coefficient of linear expansion, and the thickness of the resin substrate (10); the linear elastic moduli, the coefficients of linear expansion, and the total thickness of the front surface-side inorganic films (11, 13, and 16); and the linear elastic modulus, the coefficient of linear expansion, and the thickness of the rear surface-side inorganic film (9) is 20 mm or more or ?20 mm or less.

Abstract: The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film.

Abstract: A display device includes a TFT substrate (30) containing a transparent first resin substrate (11) having the heat resistance and a plurality of TFTs (5) disposed on the first resin substrate (11) and a counter-substrate (50) containing a transparent second resin substrate (41) having the heat resistance and being disposed opposing to the TFT substrate (30), wherein the first resin substrate (11) and the second resin substrate (41) have a thickness of 5 ?m or more and 20 ?m or less and a birefringence of 0.002 or more and 0.1 or less.

Abstract: A flexible display device (100) according to the present invention includes a display panel (10), a circuit board (30), a circuit part (32), and a housing (20). The display panel, the circuit board, and the housing have flexibility at least along a first direction which is perpendicular to the plane of the display panel. A length 2a of the circuit part along a second direction which is parallel to the plane of the display panel, a thickness b of the circuit part along the first direction, a distance d between the bottom face and the upper face of the housing or between the bottom face of the housing and a lower face of the display panel, and a radius of curvature r of the bottom face of the housing when the housing is curved to a maximum extent along the first direction satisfy the relationship a?[d2?b2+2·r·(d?b)](1/2).

Abstract: The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.

Abstract: A semiconductor device (130) includes: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90) bonded to the bonding substrate (100), the semiconductor element (90) including semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body (50) facing the bonding substrate (100), and each of the underlying layers (51-54) including an insulating layer and a circuit pattern in the insulating layer, wherein an end of the semiconductor element (90) facing the thin film element (80) is provided in a stepped form so that the closer to the bonding substrate the underlying layers arc, the farther ends of the underlying layers facing the thin film element protrude, the end of the semiconductor element (90) is covered with a resin layer (120), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin

Abstract: Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.