Abstract: The invention relates to a method of producing epitaxial wafers for the manufacture of high integration density devices capable of showing stable gettering effect. Specifically, it provides (1) a method of producing epitaxial wafers which comprises subjecting a silicon wafer sliced from a single crystal ingot grown by doping with not less than 1×1013 at ms/cm3 of nitrogen to 15 minutes to 4 hours of heat treatment at a temperature not lower than 700° C. but lower than 900° C. and then to epitaxial growth treatment. It is desirable that the above single crystal ingot have an oxygen concentration of not less than 11×1017 atoms/cm3. Further, (2) the above heat treatment is desirably carried out prior to the step of mirror polishing of silicon wafers. Furthermore, (3) it is desirable that the pulling rate be not increased in starting tail formation as compared with the pulling rate of the body in growing the above single crystal ingot.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016-5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer.

Abstract: The present invention materializes a liquid-crystal display element and a liquid-crystal display device which promise superior display performance, in which the surface of an alignment film formed on a substrate member has been subjected to rubbing in the state the surface potential of a rubbing roller has been controlled by bringing a charge control member made to have the same potential as the potential of the substrate member into contact with the rubbing roller, to keep any foreign matter from adhering to the alignment film surface.

Abstract: A method is designed to manufacture a silicon epitaxial wafer exhibiting sufficient gettering capability from the initial stage of the device process. Specifically, the method is to manufacture the silicon wafer with a nitrogen concentration of at least 1×1012 atoms/cm3 and an oxygen concentration of 10˜18×1017 atoms/cm3 by annealing at a temperature of 800 ˜1,100° C.

Abstract: A method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device by which a gettering ability can be given to an epitaxial wafer in which the formation of BMD is not able to be expected in both low- and high-temperature device manufacturing processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, and has a specific resistance of ≧10 m&OHgr;·cm. When this method is used, such BMD that is sufficient to obtain gettering can be formed in both the low- and high-temperature processes, with the manufacturing processes being lower and higher than 1,050° C. in temperature, even in the epitaxial wafer having a specific resistance of ≧10 m&OHgr;·cm by performing low-temperature heat treatment at 650˜900° C.

Abstract: The present invention provides for a frame construction which comprises frames wherein a machining tool and functional devices for making the tool operate are mounted on separate frames, and the respective frames can run independently. The present invention also provides a machining device which utilizes the aforementioned frame construction so that machining accuracy can be maintained irrespective of the weight of the functional devices mounted on the frame.

Abstract: A FIG. 1 is taken by a camera having optical/electrical elements arrayed in matrix, signals of pixels of the picture taken by the camera 2 are converted into binary data in a binary circuit 11, and the binary data is temporarily stored in a binary data storage device 12. The reference point 0 is determined on the edge of the figure, and radius L of the circuit scanning line 21 is determined based on the shape of the figure, and reference point 0 and the radius L of the circle scanning line 21 are inputted through an input unit 13. Coordinate data of pixels on the circuit scanning line 21 is operated based on the inputted numeric values in an arithmetic circuit 15. Binary data on pixels corresponding to coordinate data are read in the detector 16. When the pixel corresponding to the edge of the FIG. 1 is detected, a vector directed from the reference point 0 to the pixel is decided, and first and second drives 7, 8 are driven according to the vector.

Abstract: A FIG. 1 is taken by a camera having optical/electrical elements arrayed in matrix, signals of pixels of the picture taken by the camera 2 are converted into binary data in a binary circuit 11, and the binary data is temporarily stored in a binary data storage device 12. The reference point 0 is determined on the edge of the figure, and plural coaxial circle scanning lines A, B about the reference point 0 which differs from each other in radius are set. In arithmetic circuit 15, coordinate data of pixels on the circle scanning lines A, B is operated. In the detector 16, binary data of the pixels on the circle scanning lines A, B is detected. In the decision circuit 17, the vectors from the reference point 0 to the detected pixels on the circle scanning lines A, N, and the vector angle between the obtained vectors is operated. A speed signal according to the vector angle is generated for driving the first and second drive 7, 8.

Abstract: A rotary damper is disclosed having a hollow casing and a power receiving shaft extending exteriorly of the casing. The power receiving shaft turns a movable vane within the casing to pressurize a working fluid. A stationary partition member including a dividing wall and a dividing vane is positioned within the casing and journals the movable vane for rotation within the casing. The movable vane is provided with a through hole equipped with a one-way valve and the dividing wall is provided with a plurality of arcuately spaced orifices. The orifices are positioned to be serially covered by the movable vane as it is rotated to thereby provide increased resistance to fluid flow as the movable vane is further rotated.

Abstract: When a cold reduced steel of which chemical composition is substantially controlled within the range of 10x[S]% to 2.00% [Mn], 0.003 to 0.02% [N] and (<5.times.10.sup.31 4)/[N]% [Al] is subjected to a full continuous annealing process comprising a heating-up step of Ac.sub.1 to 900.degree. C .times. 5 to 180 sec., a rapid cooling step of the heating-up temperature to about room temperature by water-spray, reheating step of the room temperature to 150.degree. C to 450.degree. C .times. 5 to 300 sec., and then final cooling- and coiling step, high bake-hardenability and excellent non-aging property are given to the above steel with ease.