Abstract: Apparatuses and methods for correcting a code used for delay adjustment are disclosed. An example method includes providing a bit of a thermometer code responsive, at least, to a shift direction signal; and adjusting an amount of a delay responsive to the thermometer code. Providing the bit comprises correcting the bit using one or more adjacent bits on one side of the bit in the thermometer code and one or more adjacent bits on another side of the bit in the thermometer code.

Abstract: Methods and apparatuses of a two-phase flip-flop with symmetrical rise and fall times are disclosed herein. An example apparatus may include a clock generator circuit including a two-phase flip-flop circuit configured to provide an output signal. The two-phase flip-flop circuit includes a two-phase flip-flop and a driver circuit. The two-phase flip-flop is configured to provide a first driver control signal and a second driver control signal responsive to a clock signal. The first driver control signal and the second driver control signal are complementary. The driver circuit is configured to provide the output signal responsive to the first driver control signal and the second driver control signal.

Abstract: Apparatuses and methods for adjusting a phase mixer circuit are disclosed. An example method includes providing data values stored by a plurality of first registers and a plurality of second registers. The method includes: during a first mode of operation, receiving the data values by groups of first registers of the plurality of the first registers and holding the data values by the plurality of second registers; during a second mode of operation, inverting a data value by one first register of the plurality of first registers at a time and holding the data values by the plurality of second registers; and during a third mode of operation, either inverting the data value by one first register of the plurality of first registers while holding the data values by the plurality of second registers or inverting a data value by one second register of the plurality of second registers while holding the data values by the plurality of first registers.

Abstract: A semiconductor device may include a delay locked loop (DLL) control circuit coupled to an update trigger generator and a DLL update circuit. The DLL control circuit may receive an update trigger signal and an internal refresh signal and configured to activate the DLL update circuit responsive to an update trigger in the update trigger signal and deactivate the DLL update circuit responsive to an active internal refresh signal. The DLL update circuit may perform DLL update to one or more memory cell arrays when activated and not perform DLL update to the memory cell arrays when deactivated. The DLL control circuit may reactivate the DLL update circuit once the internal refresh signal becomes inactive. In other scenarios, once the DLL update circuit is deactivated, the DLL update circuit stays deactivated until the next update trigger in the update trigger signal.

Abstract: Apparatuses and methods for adjusting a phase mixer circuit are disclosed. An example apparatus includes a shift register that includes a plurality of registers coupled in series to one another. The plurality of registers are grouped into a first group of registers and a second group of registers. The first group of registers includes first and second registers. The second group of registers includes a third register. The first and second registers of the first group of registers are configured to receive in common an output of the third register of the second group of registers so that both the first and second registers store the output of the third register responsive to a shift clock.

Abstract: In an example semiconductor device, the voltage/temperature conditions of the semiconductor device and associated calibration codes of multiple instances of ZQ calibrations are pre-stored in a register array. When a pre-stored voltage/temperature condition occurs again, ZQ calibration is not performed. Instead, the associated pre-stored calibration code is retrieved from the register array and provided to the IO circuit. When a voltage/temperature condition of the semiconductor device does not match any pre-stored voltage/temperature condition in the register array, a ZQ calibration is performed. When the ZQ calibration is performed, a register in the register array is selected according to an update policy and updated by the calibration code newly provided by the ZQ calibration along with the voltage/temperature condition at the time when the ZQ calibration is performed.

Abstract: Several embodiments of electrical circuit devices and systems with a duty cycle correction apparatus that includes a duty cycle adjustment circuit that is configured to adjust a duty cycle of the input clock signal based on an averaged code value. The duty cycle correction apparatus includes a duty cycle detector circuit that receives first and second clock signals from a clock distribution network. The duty cycle detector is configured to output a duty cycle status signal that indicates whether the first clock signal is above or below a 50% duty cycle based on a comparison of the first clock signal to the second clock signal. The duty cycle correction apparatus also includes a counter logic circuit configured to determine the average code value, and the counter logic circuit automatically cancels an offset of the duty cycle detector when determining the averaged code value.

Abstract: A memory device includes a terminal calibration circuit having at least one of a pull-down circuit or a pull-up circuit used in calibrating an impedance of a data bus termination. The memory device also includes a reference calibration circuit configured to generate a calibration current. The terminal calibration circuit can be configured to program an impedance of the least one of a pull-down circuit or a pull-up circuit based on the calibration current.

Abstract: A semiconductor device may include a delay locked loop (DLL) control circuit coupled to an update trigger generator and a DLL update circuit. The DLL control circuit may receive an update trigger signal and an internal refresh signal and configured to activate the DLL update circuit responsive to an update trigger in the update trigger signal and deactivate the DLL update circuit responsive to an active internal refresh signal. The DLL update circuit may perform DLL update to one or more memory cell arrays when activated and not perform DLL update to the memory cell arrays when deactivated. The DLL control circuit may reactivate the DLL update circuit once the internal refresh signal becomes inactive. In other scenarios, once the DLL update circuit is deactivated, the DLL update circuit stays deactivated until the next update trigger in the update trigger signal.

Abstract: Apparatuses and methods for data transmission offset values in burst transmissions. An example apparatus may include offset logic configured to provide offset values associated with a receiver circuit of a memory device coupled to a signal line. The offset values are based on individual transition threshold voltages biases of sample circuits of the receiver circuit. The example apparatus may further include an input/output (I/O) circuit comprising a driver circuit. The driver circuit configured to receive a logic signal and the offset values and to provide an output signal to the signal line based on the logic signal and to adjust voltages of the output signal based on the offset values.

Abstract: Disclosed herein is an apparatus that includes a variable clock divider configured to divide a first clock signal to generate a second clock signal, a delay circuit configured to delay the second clock signal to generate a third clock signal, and a phase detector configured to compare phases of the second and third clock signals. The variable clock divider has a division ratio that is variable based, at least in part, on a delay amount of the delay circuit.

Abstract: A memory system includes an external calibration device that has a predetermined impedance and a first memory device with a first pad for selective connection to the external calibration device. The first memory device also includes an internal calibration device having an impedance that is programmable and a second pad connected to the internal calibration device. The system further includes a second memory device having a third pad for selective connection to the second pad of the first memory device. A processing device is operatively coupled to the first memory device and the second memory device. The processing device programs the impedance of the internal calibration device of the first memory device based on the external calibration device, and programs an impedance of a termination component in the second memory device based on the impedance of the internal calibration device of the first memory device.

Abstract: A memory device includes a terminal calibration circuit having at least one of a pull-down circuit or a pull-up circuit used in calibrating an impedance of a data bus termination. The memory device also includes a reference calibration circuit configured to generate a calibration current. The terminal calibration circuit can be configured to program an impedance of the least one of a pull-down circuit or a pull-up circuit based on the calibration current.

Abstract: Apparatuses and methods for maintaining a duty cycle error counter. An example apparatus may a duty cycle detect circuit configured to receive a clock signal and to detect a duty cycle error of the clock signal. The duty cycle detect error includes a counter configured to store a count value indicating the duty cycle error using Gray code. The counter is adjusted in response to detection of non-zero duty cycle error, and the counter is configured to convert the count value from Gray code to binary code as a binary count value. The duty cycle detect circuit is further configured to provide a duty cycle error signal based on the binary count value. The example apparatus further comprising a duty cycle correction circuit configured to adjust a duty cycle of the clock signal based on the duty cycle error signal.

Abstract: In an example semiconductor device, the voltage/temperature conditions of the semiconductor device and associated calibration codes of multiple instances of ZQ calibrations are pre-stored in a register array. When a pre-stored voltage/temperature condition occurs again, ZQ calibration is not performed. Instead, the associated pre-stored calibration code is retrieved from the register array and provided to the IO circuit. When a voltage/temperature condition of the semiconductor device does not match any pre-stored voltage/temperature condition in the register array, a ZQ calibration is performed. When the ZQ calibration is performed, a register in the register array is selected according to an update policy and updated by the calibration code newly provided by the ZQ calibration along with the voltage/temperature condition at the time when the ZQ calibration is performed.

Abstract: Apparatuses and methods are disclosed for detecting a loop count in a delay-locked loop that uses a divide clock in a measure initialization process. An example apparatus includes a divider configured to receive a signal and produce a first divided signal and a second divided signal that is complementary to the first divided signal, a first circuit configured to count the first divided signal during a first enabled period and produce a first count value, a second circuit configured to count the second divided signal during a second enabled period and produce a second count value, and an adder configured to produce a third count value responsive to the first and second count values.

Abstract: A memory system includes an external calibration device that has a predetermined impedance and a first memory device with a first pad for selective connection to the external calibration device. The first memory device also includes an internal calibration device having an impedance that is programmable and a second pad connected to the internal calibration device. The system further includes a second memory device having a third pad for selective connection to the second pad of the first memory device. A processing device is operatively coupled to the first memory device and the second memory device. The processing device programs the impedance of the internal calibration device of the first memory device based on the external calibration device, and programs an impedance of a termination component in the second memory device based on the impedance of the internal calibration device of the first memory device.

Abstract: Several embodiments of electrical circuit devices and systems with a duty cycle correction apparatus that includes a duty cycle adjustment circuit that is configured to adjust a duty cycle of the input clock signal based on an averaged code value. The duty cycle correction apparatus includes a duty cycle detector circuit that receives first and second clock signals from a clock distribution network. The duty cycle detector is configured to output a duty cycle status signal that indicates whether the first clock signal is above or below a 50% duty cycle based on a comparison of the first clock signal to the second clock signal. The duty cycle correction apparatus also includes a counter logic circuit configured to determine the average code value, and the counter logic circuit automatically cancels an offset of the duty cycle detector when determining the averaged code value.

Abstract: Apparatuses and methods are disclosed for detecting a loop count in a delay-locked loop that uses a divide clock in a measure initialization process. An example apparatus includes a divider configured to receive a signal and produce a first divided signal and a second divided signal that is complementary to the first divided signal, a first circuit configured to count the first divided signal during a first enabled period and produce a first count value, a second circuit configured to count the second divided signal during a second enabled period and produce a second count value, and an adder configured to produce a third count value responsive to the first and second count values.

Abstract: Apparatuses and methods for data transmission offset values in burst transmissions. An example apparatus may include offset logic configured to provide offset values associated with a receiver circuit of a memory device coupled to a signal line. The offset values are based on individual transition threshold voltages biases of sample circuits of the receiver circuit. The example apparatus may further include an input/output (I/O) circuit comprising a driver circuit. The driver circuit configured to receive a logic signal and the offset values and to provide an output signal to the signal line based on the logic signal and to adjust voltages of the output signal based on the offset values.