Abstract: Provided are the following: an MWW type zeolite which has many Brønsted acid sites when in the form of a proton type and which is highly suitable as a cracking catalyst for cumene; a method for producing same; and an application of same. The present invention provides an MWW type zeolite in which the ratio (B/A) of the peak intensity (B) attributable to tetracoordinate aluminum relative to the peak intensity (A) attributable to hexacoordinate aluminum is 2 or more in 27Al MAS NMR, when measured as an ammonium type. The present invention also provides a method for producing an MWW type zeolite, the method having a step for carrying out a hydrothermal synthesis reaction in the presence of: a seed crystal of an MWW type zeolite containing no organic structure-directing agent; and a reaction mixture containing a silica source, an alumina source, an alkali source, an organic structure-directing agent, and water. The reaction mixture satisfies the following molar ratio: X/SiO2<0.

Abstract: Provided are the following: an MWW type zeolite which has many Brønsted acid sites when in the form of a proton type and which is highly suitable as a cracking catalyst for cumene; a method for producing same; and an application of same. The present invention provides an MWW type zeolite in which the ratio (B/A) of the peak intensity (B) attributable to tetracoordinate aluminum relative to the peak intensity (A) attributable to hexacoordinate aluminum is 2 or more in 27Al MAS NMR, when measured as an ammonium type. The present invention also provides a method for producing an MWW type zeolite, the method having a step for carrying out a hydrothermal synthesis reaction in the presence of: a seed crystal of an MWW type zeolite containing no organic structure-directing agent; and a reaction mixture containing a silica source, an alumina source, an alkali source, an organic structure-directing agent, and water. The reaction mixture satisfies the following molar ratio: X/SiO2<0.

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Abstract: Provided is a beta zeolite also having exceptional catalytic activity as a catalyst other than an olefin epoxidation catalyst. This beta zeolite is synthesized without using an organic structure-directing agent and has titanium in the structural skeleton thereof, the Ti content being 0.10 mmol/g or higher. This beta zeolite preferably has an Si/Ti molar ratio of 20-200. Also, the Si/Al molar ratio is preferably 100 or higher.

Abstract: The purpose of the present invention is to provide a metal-substituted beta zeolite that exhibits a more excellent catalytic performance than conventional one, and a method for producing the same. The present invention provides a metal-substituted beta zeolite by subjecting an alkali metal-form beta zeolite produced without using an organic structure-directing agent to ion exchange with ammonium ion and then, using a filter cake procedure, to ion exchange with copper ion or iron(II) ion. The present invention also provides a metal-substituted beta zeolite which has been ion exchanged with copper ion or iron(II) ion and in which the amount of Lewis acid sites is greater than the amount of Bronsted acid sites when the amount of Bronsted acid sites and the amount of Lewis acid sites are measured by ammonia infrared-mass spectroscopy temperature-programmed desorption on the as-produced state.

Abstract: Provided is an organic EL device substrate (1) including, in order in a thickness direction: a light-transmitting plate; a high refractive index layer (4); and a transparent conductive layer (5), the organic EL device substrate (1) having a recessed groove portion (6) configured to divide the transparent conductive layer (5) at least into a first region (R1) and a second region (R2). When a thickness of the transparent conductive layer (5) is represented by t1 (?m), a minimum width of the recessed groove portion (6) is represented by w1 (?m), and a maximum depth of the recessed groove portion (6) with respect to a surface (5a) of the transparent conductive layer (5) on an opposite side of the high refractive layer (4) is represented by d1 (?m), the following relationships are established: t1?d1; and d1/{(w1)0.5}<0.1.

Abstract: Provided are the following: an MWW type zeolite which has many Brønsted acid sites when in the form of a proton type and which is highly suitable as a cracking catalyst for cumene; a method for producing same; and an application of same. The present invention provides an MWW type zeolite in which the ratio (B/A) of the peak intensity (B) attributable to tetracoordinate aluminum relative to the peak intensity (A) attributable to hexacoordinate aluminum is 2 or more in 27Al MAS NMR, when measured as an ammonium type. The present invention also provides a method for producing an MWW type zeolite, the method having a step for carrying out a hydrothermal synthesis reaction in the presence of: a seed crystal of an MWW type zeolite containing no organic structure-directing agent; and a reaction mixture containing a silica source, an alumina source, an alkali source, an organic structure-directing agent, and water. The reaction mixture satisfies the following molar ratio: X/SiO2<0.

Abstract: The purpose of the present invention is to provide a metal-substituted beta zeolite that exhibits a more excellent catalytic performance than conventional one, and a method for producing the same. The present invention provides a metal-substituted beta zeolite by subjecting an alkali metal-form beta zeolite produced without using an organic structure-directing agent to ion exchange with ammonium ion and then, using a filter cake procedure, to ion exchange with copper ion or iron(II) ion. The present invention also provides a metal-substituted beta zeolite which has been ion exchanged with copper ion or iron(II) ion and in which the amount of Lewis acid sites is greater than the amount of Bronsted acid sites when the amount of Bronsted acid sites and the amount of Lewis acid sites are measured by ammonia infrared-mass spectroscopy temperature-programmed desorption on the as-produced state.

Abstract: Provided is a beta zeolite also having exceptional catalytic activity as a catalyst other than an olefin epoxidation catalyst. This beta zeolite is synthesized without using an organic structure-directing agent and has titanium in the structural skeleton thereof, the Ti content being 0.10 mmol/g or higher. This beta zeolite preferably has an Si/Ti molar ratio of 20-200. Also, the Si/Al molar ratio is preferably 100 or higher.

Abstract: A glass roll includes a glass film formed by a downdraw method. The glass film is wound into a roll using a winding roller in a state in which front and back glass surfaces of the glass film formed in the forming operation are exposed, and during the winding operation, the glass film is superposed on a separable protective sheet. The protective sheet extends beyond both sides in a width direction of the glass film. The protective sheet can further be wound on an outer peripheral surface of the glass film by winding only the protective sheet from a trailing end of the glass film in a winding direction of the glass film.

Abstract: A connection module includes an insulation protector including a bus bar holder holding a bus bar. The insulation protector includes connection units. The connection units include two end connection units at two ends of the insulation protector, and intermediate connection units that are between the two end connection units. The two end connection units are connection units having a same structure, and one of the end connection units is relatively rotated by 180 degrees in a plan view with respect to another one of the end connection units, and each of the end connection units is connected to a corresponding intermediate connection unit.

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Abstract: A mother substrate for substrate for electronic device including comprises a transparent substrate having a first surface and a second surface opposite to each other, a concavo-convex structure formed on the first surface of the transparent substrate, and a transparent covering layer having a higher refractive index than the transparent substrate, and being configured to cover the first surface and the concavo-convex structure. An outer peripheral end of the transparent covering layer is located at the same position as an outer peripheral end of the transparent substrate or located at a position on an inner side with respect to the outer peripheral end of the transparent substrate, and an outer peripheral end of the concavo-convex structure is located at a position on an inner side with respect to the outer peripheral end of the transparent covering layer.

Abstract: A connection module includes an insulation protector including a bus bar holder holding a bus bar. The insulation protector includes connection units. The connection units include two end connection units at two ends of the insulation protector, and intermediate connection units that are between the two end connection units. The two end connection units are connection units having a same structure, and one of the end connection units is relatively rotated by 180 degrees in a plan view with respect to another one of the end connection units, and each of the end connection units is connected to a corresponding intermediate connection unit.

Abstract: A construction machine includes: a cover that covers an engine and a radiator; a radiator fan that is arranged at the rear of a vehicle body frame and discharges exhaust gas toward the rear of the vehicle body frame from the inner space of the cover; an injection device that injects a reducing agent into exhaust gas of the engine; a tank housing section that is arranged at one side of the vehicle body frame, includes an introduction section for introducing outside air, and houses a tank for storing the reducing agent injected by the injection device; and a connection section that is arranged in either the cover or the vehicle body frame and in the tank housing section, connects the inner space of the tank housing section and the inner space of the cover, and allows the outside air and the pipe to pass therethrough, the outside air having been introduced from the introduction section by the suction pressure of the radiator fan, the pipe supplying the reducing agent to the injection device.

Abstract: In a method of producing a glass substrate including a laminate preparing step of laminating a glass film 1 having flexibility and a support glass 2 supporting the same, to prepare a laminate 3; a process step of forming an organic EL device 4 on the glass film 1 in the laminate 3, involving heating; and a peeling step of peeling off the glass film 1 on which the organic EL device 4 is formed from the support glass 2 to obtain a glass substrate 5, a heating step of heating the glass film 1 and the support glass 2 is executed before execution of the laminate preparing step, and the glass film 1 and the support glass 2 are laminated in the condition that they are heated at the time of execution of the laminate preparing step.

Abstract: A glass roll reliably prevents a glass film from breaking from an end surface of the glass film as an origin of breakage. The glass roll is formed by winding the glass film into a roll while superposing the glass film on a protective sheet. The glass film is formed by an overflow downdraw method to have a thickness of 1 ?m or more and 200 ?m or less, and has each end surface in a width direction formed as a cut surface cut by laser splitting.

Abstract: A construction machine includes: a cover that covers an engine and a radiator; a radiator fan that is arranged at the rear of a vehicle body frame and discharges exhaust gas toward the rear of the vehicle body frame from the inner space of the cover; an injection device that injects a reducing agent into exhaust gas of the engine; a tank housing section that is arranged at one side of the vehicle body frame, includes an introduction section for introducing outside air, and houses a tank for storing the reducing agent injected by the injection device; and a connection section that is arranged in either the cover or the vehicle body frame and in the tank housing section, connects the inner space of the tank housing section and the inner space of the cover, and allows the outside air and the pipe to pass therethrough, the outside air having been introduced from the introduction section by the suction pressure of the radiator fan, the pipe supplying the reducing agent to the injection device.

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.