Abstract: An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si??General Formula (1) where y is equal to 2x and is an even integer.

Abstract: A semiconductor device of this invention has a copper wiring layer, of which a layer, to which a composition including at least one substance selected from the group consisting of ammonia and organic bases is applied, and a silicon-containing insulating film are sequentially superimposed on the copper wiring layer. Accordingly, semiconductor devices having insulating layers which adheres well to the copper serving as the wiring material can be obtained.

Abstract: A brake control device that controls braking forces applied to wheels to stabilize the behavior of a vehicle turning a corner, and includes a turning condition detection unit detecting a turning condition of the vehicle; a braking amount setting unit setting braking amounts for the respective wheels based on the turning condition detected by the turning condition detection unit; a brake control unit applying braking forces to the wheels according to the braking amounts set by the braking amount setting unit; and a road surface friction coefficient estimation unit estimating a road surface friction coefficient of the road on which the vehicle is running. The braking amount setting unit changes upper limits of the braking amounts for the respective wheels according to the road surface friction coefficient when the vehicle is in a center differential lock mode or a direct four-wheel drive mode.

Abstract: In a semiconductor substrate of a first conductivity type, first to third drain offset regions of a second conductivity type are formed in that order in a bottom up manner. A body region of the first conductivity type is formed partly in the second drain offset region and partly in the third drain offset region. The second drain offset region has a lower impurity concentration than the first and third drain offset regions. A curvature portion of the body region is located in the second drain offset region.

Abstract: After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

Abstract: A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

Abstract: It is an object of the present invention to provide a catalyst having excellent performance and high mechanical strength for use in the production of methacrylic acid. A method for manufacturing a catalyst comprising essential active components of molybdenum, phosphorus, vanadium, cesium, ammonia, copper, and antimony for use in the production of methacrylic acid, comprising drying a slurry prepared by mixing a compound(s) containing the essential active components with water and then calcining the resulting dry powder and molding the calcined powder.

Abstract: A configuration information collection unit 1502 and a transaction collection unit 1503 collect a transaction as the configuration information about an IT system and communication data, and stores them in a CMDB 1504. A multiplexed application detection unit 1501 detects as a candidate for a multiplexed application the software of applications multiplexed by evaluating whether or not the application names of the software of applications deployed to a target to be monitored on the IT system match each other. Then, it detects a multiplexed application by evaluating whether or not one or more of evaluation items of a subnet in which a candidate for a multiplexed application is performed, transaction context as the data relating to the names of an applications performed before and after the candidate for a multiplexed application, and transaction information as the transmission/reception data of the candidate for a multiplexed application match each other.

Abstract: A coated seed obtained by coating a seed with a coating material containing an inorganic mineral powder and a thermosetting resin powder having an average particle diameter of 10 to 200 ?m, wherein the thermosetting resin powder is a thermosetting resin powder obtained by aggregating a powdery pesticide with a thermosetting resin has an excellent quality.

Abstract: An optical pickup device includes: a light source for emitting light in a first wavelength range; an optical element for transmitting the light; a supporting member for supporting the optical element through an adhesive; a first light blocking member for blocking the light emitted from the light source from entering the adhesive when the optical element guides the emitted light to the optical disc; and a second light blocking member for blocking the light reflected from the optical disc from entering the adhesive when the optical element guides the reflected light to the detector unit. In this optical pickup device, at least one of the first and second light blocking member blocks the light in the first wavelength range and transmits light in a second wavelength range.

Abstract: The present invention, an apparatus includes a data management apparatus comprising, a determination unit configured to determine whether an analyzing apparatus is in a communicable state when a configuration information data indicating a status of a server apparatus is received from a data collection apparatus, the data analyzing apparatus analyzing the configuration information data, an unprocessed information storage unit configured to store the received configuration information data once it is determined that data analyzing apparatus is in an incommunicable state, an integrating unit configured to integrate a plurality of configuration information data stored in the storage unit in accordance with a predetermined condition; and a notifying unit configured to send, to the analyzing apparatus, a message indicating that the data management apparatus is storing the configuration information data integrated by the integrating unit once it is determined that the data analyzing apparatus is in a communicable st

Abstract: It is an object of the present invention to provide a catalyst having excellent performance and high mechanical strength for use in the production of methacrylic acid. A method for manufacturing a catalyst comprising essential active components of molybdenum, phosphorus, vanadium, cesium, ammonia, copper, and antimony for use in the production of methacrylic acid, comprising drying a slurry prepared by mixing a compound(s) containing the essential active components with water and then calcining the resulting dry powder and molding the calcined powder.

Abstract: A method for manufacturing a semiconductor device includes: exposing an insulating film including a siloxane bond to an energy beam or plasma; and exposing the insulating film to a gas (excluding N2 and H2O gases) including at least one element selected from the group consisting of hydrogen, carbon, nitrogen and silicon, as an constituent element, wherein, in the exposing to the gas, after a relative permittivity of the insulating film descends by the exposing the insulating film to the gas, the exposing is completed before a time point when the relative permittivity of the insulating film first ascends.

Abstract: It is an object of the present invention to provide a catalyst having excellent performance and high mechanical strength for use in the production of methacrylic acid. A method for manufacturing a catalyst comprising essential active components of molybdenum, phosphorus, vanadium, cesium, ammonia, copper, and antimony for use in the production of methacrylic acid, comprising drying a slurry prepared by mixing a compound(s) containing the essential active components with water and then calcining the resulting dry powder and molding the calcined powder.

Abstract: A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

Abstract: A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

Abstract: A monitoring apparatus configured to monitor applications running on one or more monitored apparatuses; the monitoring apparatus includes: an enquiry packet generator and transmitter that generates multiple types of enquiry packets, and successively transmits the multiple types of enquiry packets to respective communication ports on the one or more monitored servers; an enquiry packet response receiver that receives enquiry packet responses, which are transmitted in response to the multiple types of enquiry packets from communication ports on the one or more monitored apparatuses; and an application analyzer that analyzes the content of the enquiry packet responses transmitted in response to the multiple types of enquiry packets, and analyzes applications running on the one or more monitored servers as applications to be monitored.

Abstract: A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

Abstract: A data collection apparatus includes an information storing unit which stores application information collected from a server providing a service by running an application and includes detail information indicating a detail of the application, an information collecting unit which collects the application information from the server, an information identifying unit which identifies application information in which an abnormality has occurred and application information, affected by the abnormality, a first comparing unit which compares, as to the application information identified by the information identifying unit, all application information including the detail information and all application information including the detail information collected in the previous point, and extracts application information different from the application information collected in a previous point, and an information sending unit which sends the application information, extracted by the first comparing unit, to a data manageme

Abstract: The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.