Abstract: An increased accuracy in detecting deterioration of a semiconductor device can be achieved. A first metal pattern and a second metal pattern are connected to a controller. A bonding wire connects the first metal pattern and an emitter electrode. A linear conductor is connected between a first electrode pad and a second electrode pad. First bonding wires connect the first electrode pad and the second metal pattern. Second bonding wires connect the second electrode pad and the second metal pattern. The controller detects the deterioration of the semiconductor device when a potential difference between the first metal pattern and the second metal pattern is above a threshold.

Abstract: In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

Abstract: A diode rectifier rectifies an AC voltage output from a neutral-grounding three-phase AC power supply to a DC voltage. A smoothing capacitor smoothes the DC voltage rectified by the diode rectifier. An inverter converts the DC voltage smoothed by the smoothing capacitor into a desired AC voltage. A bidirectional switch and a Y capacitor are connected in series between one end of the smoothing capacitor and the ground. A detector detects a voltage across both ends of the smoothing capacitor. A controller drives the bidirectional switch in response to an output of the detector.

Abstract: Gates of semiconductor switching elements are connected to a gate control wiring pattern. The gate control wiring pattern is further connected to a gate control terminal and a filter terminal which are connected by an element for forming a filter outside a housing. The filter terminal and the gate control terminal are connected to the gate control wiring pattern in such a manner that a section electrically connecting the filter terminal and the gate control terminal overlaps with at least a part of a section electrically connecting the gates of the semiconductor switching elements on the gate control wiring pattern.

Abstract: In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

Abstract: A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

Abstract: A diode rectifier rectifies an AC voltage output from a neutral-grounding three-phase AC power supply to a DC voltage. A smoothing capacitor smoothes the DC voltage rectified by the diode rectifier. An inverter converts the DC voltage smoothed by the smoothing capacitor into a desired AC voltage. A bidirectional switch and a Y capacitor are connected in series between one end of the smoothing capacitor and the ground. A detector detects a voltage across both ends of the smoothing capacitor. A controller drives the bidirectional switch in response to an output of the detector.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; a positive electrode terminal, a negative electrode terminal, and an AC terminal that are connected to each of the circuit blocks; and wiring patterns that connect the self-arc-extinguishing type semiconductor elements of the circuit blocks to the positive electrode terminal, the negative electrode terminal, and the AC terminal, wherein the circuit block is plural in number; the positive electrode terminal, the negative electrode terminal, and the AC terminal are each disposed to be plural in number corresponding to the circuit blocks; and the positive electrode terminals and the negative electrode terminals are closely disposed.

Abstract: A voltage driver shifts a voltage on a gate as a control terminal of a power semiconductor element in response to an ON command or an OFF command. A gate voltage detector generates a detection signal of a gate-emitter voltage. A delay signal generator generates a delay signal obtained by adding a delay time to the detection signal. A subtractor generates a voltage difference signal between the detection signal and the delay signal. When the voltage difference signal exceeds a reference voltage during an operation of turning on the power semiconductor element, a short-circuit state detector detects a hard-switching fault.

Abstract: A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.

Abstract: A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements, the positive arm and the negative arm being connected at a series connection point between the self-arc-extinguishing type semiconductor elements; a positive-side electrode, a negative-side electrode, and an AC electrode connected to the positive arm and the negative arm; and a substrate on which a plurality of wiring patterns are formed, the wiring patterns connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side electrode, the negative-side electrode, and the AC electrode. Respective directions of current flowing in adjacent wiring patterns are identical to each other, and one of the adjacent wiring patterns is arranged in mirror symmetry with the other of the adjacent wiring patterns.

Abstract: In order to obtain a drive circuit of a power semiconductor device capable of making a fast response to a voltage fluctuation dV/dt and preventing a malfunction of the power semiconductor device while suppressing power consumption with a simple circuit configuration, a control circuit controlling ON and OFF switching of the power semiconductor device, a DC power supply supplying a voltage between control terminals of the power semiconductor device, and a switching element connected between the control terminals of the power semiconductor device are provided. The switching element turns ON in a case where a power supply voltage of the DC power supply drops or in a case where the voltage between the control terminals of the power supply device increases in a state where the power supply voltage of the DC power supply has dropped, and thereby causes a short-circuit between the control terminals of the power semiconductor device.

Abstract: A short-circuit protection circuit for a self-arc-extinguishing type semiconductor element includes a first protection circuit and a second protection circuit. The first protection circuit is configured to reduce a voltage between a control electrode and a first main electrode of the self-arc-extinguishing type semiconductor element when detecting overcurrent flowing between the first main electrode and a second main electrode. The second protection circuit is configured to: detect current flowing in an interconnection adapted to supply the drive voltage; determine, based on the detected current, whether the first protection circuit is in an operating state; and change the drive voltage to turn off the self-arc-extinguishing type semiconductor element when the first protection circuit is in the operating state.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.

Abstract: A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

Abstract: A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.

Abstract: A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.

Abstract: A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements, the positive arm and the negative arm being connected at a series connection point between the self-arc-extinguishing type semiconductor elements; a positive-side electrode, a negative-side electrode, and an AC electrode connected to the positive arm and the negative arm; and a substrate on which a plurality of wiring patterns are formed, the wiring patterns connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side electrode, the negative-side electrode, and the AC electrode. Respective directions of current flowing in adjacent wiring patterns are identical to each other, and one of the adjacent wiring patterns is arranged in mirror symmetry with the other of the adjacent wiring patterns.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.

Abstract: A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.