Abstract: A power switching circuit includes a power semiconductor element that includes a main switching element connected in parallel with a main body diode and a sense switching element connected in parallel with a sense body diode; a reverse overcurrent detection circuit that detects an overcurrent flowing in the reverse direction out of currents flowing through a parallel-connection body of the sense switching element and the sense body diode; and a control circuit that drives the gate of the power semiconductor element; wherein when the reverse overcurrent detection circuit detects a reverse overcurrent, the control circuit controls the main switching element and the sense switching element to turn on.

Abstract: When an overcurrent detection section detects an overcurrent, a control circuit performs ON-OFF control for switching devices each switchable between a forward direction and a reverse direction, in a mode in which a current having flowed is reduced, such that when the mode is a mode in which a current is passed through any of diodes, a switching device connected in parallel with the current-passed diode is turned ON. Thus, even when an overcurrent occurs, the current flowing in the diode connected in parallel with the switching device is reduced, and the diode is protected from being deteriorated or broken by the overcurrent.

Abstract: A method of production of ethylene-based polymer particles includes the steps of: homopolymerizing ethylene or copolymerizing ethylene and a linear or branched ?-olefin having 3 to 20 carbon atoms in the presence of an olefin polymerization catalyst including: (A) fine particles having an average particle diameter greater than or equal to 1 nm and less than or equal to 300 nm obtained at least by the following two steps: (Step 1) causing contact between a metal halide and an alcohol in a hydrocarbon solvent; (Step 2) causing contact between a component obtained by (Step 1) and an organoaluminum compound and/or an organoaluminumoxy compound; and (B) a transition metal compound represented in General Formula (I) or (II), and (E) an intrinsic viscosity [?] of the ethylene-based polymer particles, measured in decalin at 135° C., is from 5 to 50 dL/g.

Abstract: A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

Abstract: A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.

Abstract: A power semiconductor device with improved productivity, reduced size and reduction of amounting area therefore is provided. In the provided power semiconductor device, an external terminal does not limit an increase in current. The power semiconductor device is sealed with transfer molding resin. In the power semiconductor device, a cylindrical external terminal communication section is arranged on a wiring pattern so as to be substantially perpendicular to the wiring pattern. An external terminal can be inserted and connected to the cylindrical external terminal communication section. The cylindrical external terminal communication section allows the inserted external terminal to be electrically connected to the wiring pattern. A taper is formed at, at least, one end of the cylindrical external terminal communication section, which one end is joined to the wiring pattern.

Abstract: A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; a positive electrode terminal, a negative electrode terminal, and an AC terminal that are connected to each of the circuit blocks; and wiring patterns that connect the self-arc-extinguishing type semiconductor elements of the circuit blocks to the positive electrode terminal, the negative electrode terminal, and the AC terminal, wherein the circuit block is plural in number; the positive electrode terminal, the negative electrode terminal, and the AC terminal are each disposed to be plural in number corresponding to the circuit blocks; and the positive electrode terminals and the negative electrode terminals are closely disposed.

Abstract: A power switching circuit includes a power semiconductor element that includes a main switching element connected in parallel with a main body diode and a sense switching element connected in parallel with a sense body diode; a reverse overcurrent detection circuit that detects an overcurrent flowing in the reverse direction out of currents flowing through a parallel-connection body of the sense switching element and the sense body diode; and a control circuit that drives the gate of the power semiconductor element; wherein when the reverse overcurrent detection circuit detects a reverse overcurrent, the control circuit controls the main switching element and the sense switching element to turn on.

Abstract: A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.

Abstract: When an overcurrent detection section detects an overcurrent, a control circuit performs ON-OFF control for switching devices each switchable between a forward direction and a reverse direction, in a mode in which a current having flowed is reduced, such that when the mode is a mode in which a current is passed through any of diodes, a switching device connected in parallel with the current-passed diode is turned ON. Thus, even when an overcurrent occurs, the current flowing in the diode connected in parallel with the switching device is reduced, and the diode is protected from being deteriorated or broken by the overcurrent.

Abstract: A gate drive circuit capable of turning on a semiconductor switching element at high speed, which includes: a buffer circuit including a turn-on-drive switching element and a turn-off-drive switching element that are complementarily turned on and off, for driving the semiconductor switching element; a first DC voltage supply including a positive electrode connected to the source or emitter of the turn-on-drive switching element and a negative electrode connected to a reference potential; and a second DC voltage supply including a positive electrode connected to the source or emitter of the turn-off-drive switching element and a negative electrode connected to the reference potential.

Abstract: A method of production of ethylene-based polymer particles includes the steps of: homopolymerizing ethylene or copolymerizing ethylene and a linear or branched ?-olefin having 3 to 20 carbon atoms in the presence of an olefin polymerization catalyst including: (A) fine particles having an average particle diameter greater than or equal to 1 nm and less than or equal to 300 nm obtained at least by the following two steps: (Step 1) causing contact between a metal halide and an alcohol in a hydrocarbon solvent; (Step 2) causing contact between a component obtained by (Step 1) and an organoaluminum compound and/or an organoaluminumoxy compound; and (B) a transition metal compound represented in General Formula (I) or (II), and (E) an intrinsic viscosity [?] of the ethylene-based polymer particles, measured in decalin at 135° C., is from 5 to 50 dL/g.

Abstract: To provide capsular fine particles comprising an olefinic polymer which have a uniform particle size distribution and a uniform particle size, and which are spherical and free from the coagulation between particles. Capsular fine particles comprising the olefinic polymer, of which the ratio (L/M) of the outer diameter (L) to the inner diameter (M) is 1.1 to 6.0, and the average diameter is 0.6 to 40 ?m.

Abstract: A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

Abstract: A power semiconductor device in which transfer molding resin seals: a metallic circuit substrate; a power semiconductor element joined to a wiring pattern; and a side surface of a cylindrical external terminal communication section provided on the wiring pattern and to which an external terminal can be inserted and connected. The cylindrical external terminal communication section is substantially perpendicular to a surface on which the wiring pattern is formed. An outer surface of a metal plate of the metallic circuit substrate and a top portion of the cylindrical external terminal communication section are exposed from the transfer molding resin. The transfer molding resin is not present within the cylindrical external terminal communication section.

Abstract: A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.

Abstract: The invention provides transition metal complex compounds, high-activity olefin oligomerization catalysts containing the compounds, and olefin oligomerization processes using the catalysts. A transition metal complex compound [A] according to the invention is represented by Formula (I) or Formula (I?) below. An olefin oligomerization catalyst includes the transition metal complex compound [A]. In an olefin oligomerization process of the invention, an olefin is oligomerized in the presence of the catalyst.

Abstract: A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.

Abstract: A gate drive circuit capable of turning on a semiconductor switching element at high speed, which includes: a buffer circuit including a turn-on-drive switching element and a turn-off-drive switching element that are complementarily turned on and off, for driving the semiconductor switching element; a first DC voltage supply including a positive electrode connected to the source or emitter of the turn-on-drive switching element and a negative electrode connected to a reference potential; and a second DC voltage supply including a positive electrode connected to the source or emitter of the turn-off-drive switching element and a negative electrode connected to the reference potential.

Abstract: In a conventional cooling device, a heat pipe or a circulation-type liquid cooler provided with a pump is used and therefore, a large space is needed for the cooling device. There is provided a cooling device which includes a plurality of cooling modules having cooling units for cooling heat-generating elements by coolant and radiation units for radiating heat from the coolant heated in the cooling units, the plurality of cooling modules being bubble-pump-type ones in which the coolant is circulated between the radiation units and the cooling units by the coolant being boiled in the cooling units, the radiation units being arranged side by side, and a cooling fan for generating wind blowing the radiation units.