Abstract: An object of the present disclosure is to provide a data collection system and a data collection method which are capable of collecting sensing data and various pieces of metadata by a single communication protocol and capable of associating the sensing data with the metadata without errors. A data collection system 301 of the present disclosure is a data collection system that performs communication from a terminal 11 to a data collection unit 12 by a standardized communication protocol (LLDP or HTIP), in which the terminal 11 stores sensing data detected by a sensor device in an extended field different from a field in which metadata is stored, within a frame specified by the communication protocol, and the data collection unit 12 associates the sensing data with the metadata based on information for identifying the terminal described in the frame.

Abstract: According to one embodiment, a blade damage evaluation system comprising one or more computers configured to: evaluate inflow and collision of solid particles into a turbine based on design data, maintenance data, and operation data; and calculate a survival rate by applying at least one data included in at least one of the design data, the maintenance data, and the operation data as at least one factor to a formula that models the turbine by survival time analysis, the survival rate indicating that erosion amount of at least one of a plurality of blades does not reach a predetermined threshold at arbitrary time in future.

Abstract: A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device including a first electrode, a first layer, a first unit, and a second electrode and a second light-emitting device including a third electrode, a second layer, a second unit, and a fourth electrode. The first unit is between the first electrode and the second electrode and includes a first light-emitting material. The first layer is between the first unit and the first electrode and is in contact with the first electrode. The third electrode is adjacent to the first electrode. A first gap is between the third electrode and the first electrode. The second unit is between the third electrode and the fourth electrode and includes a second light-emitting material. The second layer is between the second unit and the third electrode and is in contact with the third electrode.

Abstract: An object is to provide a data collection device and the like capable of reducing a load on an IoT terminal in metadata transmission and power consumption associated with the metadata transmission. In the present invention, a controller is provided on a data collection side that collects metadata, the metadata transmitted from an IoT terminal is grasped, and the IoT terminal is instructed to reduce the transmission frequency of metadata that does not need high real-time property according to a sensor, the type of the IoT terminal, or the like. The IoT terminal transmits the metadata only at a window time (transmission timing, data size, metadata type, or the like) permitted by the metadata controller. As a result, the IoT terminal transmits the metadata only at a limited timing, and thus can reduce a transmission load and power consumption.

Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a front surface and the modified region closest to the front surface of the semiconductor substrate. The objective lens positions a virtual focus symmetrical with a focus with respect to the front surface in the inspection region. The light detection part detects light propagating from the back surface side of the semiconductor substrate to the back surface side via the front surface.

Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a first modified region closest to a front surface of the semiconductor substrate and a second modified region closest to the first modified region. The objective lens aligns a focus from the back surface side in an inspection region. The light detection part detects light propagating in the semiconductor substrate from the front surface side to the back surface side.

Abstract: An elevator according to an aspect of the present invention includes a car speed detection device that measures car speed, an emergency braking device that comes into press contact with a guiderail and emergently stops a car when the car speed exceeds a threshold, an electric actuating unit that electrically actuates the emergency braking device, a battery that supplies electric power when commercial power supply is interrupted, and a safety control unit that monitors abnormality of the elevator and controls operation of the electric actuating unit. The safety control unit measures remaining power of the battery when the electric power is supplied from the battery, determines operation propriety of the emergency braking device at commercial power supply restoration time based on transition of battery remaining power, and controls operation of the electric actuating unit at the commercial power supply restoration time based on content of the determination.

Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a front surface and the modified region closest to the front surface of the semiconductor substrate. The objective lens positions a virtual focus symmetrical with a focus with respect to the front surface in the inspection region. The light detection part detects light propagating from the back surface side of the semiconductor substrate to the back surface side via the front surface.

Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect a tip position of a fracture in an inspection region between a back surface and the modified region closest to the back surface of the semiconductor substrate. The objective lens aligns a focus from the back surface side in an inspection region. The light detection part detects light propagating from the front surface side of the semiconductor substrate to the back surface side.

Abstract: A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.

Abstract: The invention provides a hot press machine which reduces the cooling time of a superposed member and enhances the productivity. A hot press machine of the invention includes a first die, a second die disposed on the first die, a first refrigerant flow passage for guiding a refrigerant into the first die or the second die, a plurality of grooves formed in a press forming surface of the first die or the second die, and a second refrigerant flow passage for guiding a refrigerant into the grooves. The hot press machine performs press forming and quenching by pressing a superposed member between the first die and the second die, the superposed member comprising a first steel sheet and a second steel sheet superposed and joined on the first steel sheet.

Abstract: The present invention relates to an organic charge transport layer having a low refractive index, and to an organic EL device, an organic semiconductor device, and an organic photoelectric device which are provided with the organic charge transport layer. An object of the present invention is to provide an organic semiconductor thin film having a dramatically reduced refractive index without impairing conductivity, by mixing a predetermined amount of an electret material into an organic semiconductor material. The organic charge transport layer according to the present invention is characterized by containing an organic semiconductor material and an electret material. It is preferable that the organic semiconductor material is a hole transport material and the electret material has a refractive index of 1.5 or lower.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: The invention provides manufacturing a press formed product with high corrosion resistance and different tensile strengths depending on regions by a small number of processes. The whole of a steel plate having an aluminum-based plating film is heated to an austenite range temperature by a furnace, so that the body of the steel plate is transformed into austenite and a Fe—Al alloy layer is formed on the surface of the steel plate. The steel plate formed with the Fe—Al alloy layer is taken out from the furnace, a first region of the steel plate is heat-retained by a heat resistant and retaining member, and a second region of the steel plate is cooled naturally. When the temperature of the second region becomes lower than a ferrite transformation start temperature, hot press forming is performed to the steel plate to form a press formed product.

Abstract: The invention provides manufacturing a partially reinforced press formed product with high corrosion resistance and weldability. First and second steel plates having aluminum-based plating films are heated to an austenite range temperature by first and second furnaces, respectively, to transform the bodies of the first and second steel plates into austenite and form Fe—Al alloy layers on the surfaces of the first and second steel plates. Hot press forming is then performed to the first and second steel plates formed with the Fe—Al alloy layers, the first and second steel plates being superposed. The first and second steel plates, which are hot press formed, are then welded.

Abstract: The invention provides manufacturing a partially reinforced press formed product with high corrosion resistance and antirust property without grain boundary cracks due to spot welding. First and second galvanized steel plates are heated to an austenite range temperature to transform the bodies of the first and second galvanized steel plates into austenite and form a zinc oxide film and a Fe—Zn solid solution phase on the surfaces of the first and second galvanized steel plates. Hot press forming is then performed to the first and second galvanized steel plates which are heated in the process mentioned above, the first and second galvanized steel plates being superposed. The first and second galvanized steel plates, which are hot press formed, are then welded.

Abstract: The present invention relates to an organic charge transport layer having a low refractive index, and to an organic EL device, an organic semiconductor device, and an organic photoelectric device which are provided with the organic charge transport layer. An object of the present invention is to provide an organic semiconductor thin film having a dramatically reduced refractive index without impairing conductivity, by mixing a predetermined amount of an electret material into an organic semiconductor material. The organic charge transport layer according to the present invention is characterized by containing an organic semiconductor material and an electret material. It is preferable that the organic semiconductor material is a hole transport material and the electret material has a refractive index of 1.5 or lower.

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.