Patents by Inventor Yasutaka Suzuki

Yasutaka Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210310878
    Abstract: A temperature detection circuit (1) includes a first transistor (Q1) of a bipolar type, and a second transistor (Q2) of a bipolar type, wherein the first transistor (Q1) and the second transistor (Q2) form a current mirror circuit (10), and the temperature of the amplifier circuit (30) is detected based on a temperature change of the first transistor (Q1) and the second transistor (Q2).
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Nobukazu SUZUKI, Hideyo YAMASHIRO, Yasutaka SUGIMOTO, Takayuki KAWANO
  • Publication number: 20210299610
    Abstract: A honeycomb filter including: a pillar-shaped honeycomb structure having an inflow end face and an outflow end face and including a porous partition wall disposed so as to surround a plurality of cells, the plurality of cells extending from the inflow end face to the outflow end face; inflow side plugging portions disposed at open ends of predetermined cells on the inflow end face side; and outflow side plugging portions disposed at open ends of residual cells on the outflow end face side, wherein the outflow side plugging portions comprise first outflow side plugging portions and second outflow side plugging portions, the plugging length L1 of the first outflow side plugging portions is 10 to 50% of the overall length L0 of the honeycomb structure, and the plugging length L2 of the second outflow side plugging portions is less than 10% of the overall length L0 of the honeycomb structure.
    Type: Application
    Filed: February 3, 2021
    Publication date: September 30, 2021
    Applicant: NGK Insulators, Ltd.
    Inventors: Koji FUKUYO, Michio SUZUKI, Yasutaka WATANABE, Ken ITADU
  • Patent number: 10615187
    Abstract: A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: April 7, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shinpei Matsuda, Daigo Ito, Daisuke Matsubayashi, Yasutaka Suzuki, Etsuko Kamata, Yutaka Shionoiri, Shuhei Nagatsuka
  • Patent number: 10562089
    Abstract: The invention provides a hot press machine which reduces the cooling time of a superposed member and enhances the productivity. A hot press machine of the invention includes a first die, a second die disposed on the first die, a first refrigerant flow passage for guiding a refrigerant into the first die or the second die, a plurality of grooves formed in a press forming surface of the first die or the second die, and a second refrigerant flow passage for guiding a refrigerant into the grooves. The hot press machine performs press forming and quenching by pressing a superposed member between the first die and the second die, the superposed member comprising a first steel sheet and a second steel sheet superposed and joined on the first steel sheet.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: February 18, 2020
    Assignee: TOA Industries Co., Ltd.
    Inventors: Yasutaka Suzuki, Tadashi Iwanuma, Satoshi Mizushina
  • Patent number: 10381566
    Abstract: The present invention relates to an organic charge transport layer having a low refractive index, and to an organic EL device, an organic semiconductor device, and an organic photoelectric device which are provided with the organic charge transport layer. An object of the present invention is to provide an organic semiconductor thin film having a dramatically reduced refractive index without impairing conductivity, by mixing a predetermined amount of an electret material into an organic semiconductor material. The organic charge transport layer according to the present invention is characterized by containing an organic semiconductor material and an electret material. It is preferable that the organic semiconductor material is a hole transport material and the electret material has a refractive index of 1.5 or lower.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: August 13, 2019
    Assignee: NATIONAL UNIVERSITY CORPORATION YAMAGATA UNIVERSITY
    Inventors: Daisuke Yokoyama, Yasutaka Suzuki, Wataru Aita
  • Patent number: 10186604
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: January 22, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinori Ando, Hidekazu Miyairi, Naoto Yamade, Asako Higa, Miki Suzuki, Yoshinori Ieda, Yasutaka Suzuki, Kosei Nei, Shunpei Yamazaki
  • Publication number: 20190009321
    Abstract: The invention provides manufacturing a press formed product with high corrosion resistance and different tensile strengths depending on regions by a small number of processes. The whole of a steel plate having an aluminum-based plating film is heated to an austenite range temperature by a furnace, so that the body of the steel plate is transformed into austenite and a Fe—Al alloy layer is formed on the surface of the steel plate. The steel plate formed with the Fe—Al alloy layer is taken out from the furnace, a first region of the steel plate is heat-retained by a heat resistant and retaining member, and a second region of the steel plate is cooled naturally. When the temperature of the second region becomes lower than a ferrite transformation start temperature, hot press forming is performed to the steel plate to form a press formed product.
    Type: Application
    Filed: June 21, 2018
    Publication date: January 10, 2019
    Applicant: TOA Industries Co., Ltd.
    Inventors: Yasutaka SUZUKI, Tadashi IWANUMA, Ken-ichiro MORI, Yuki NAKAGAWA
  • Publication number: 20190010570
    Abstract: The invention provides manufacturing a partially reinforced press formed product with high corrosion resistance and weldability. First and second steel plates having aluminum-based plating films are heated to an austenite range temperature by first and second furnaces, respectively, to transform the bodies of the first and second steel plates into austenite and form Fe—Al alloy layers on the surfaces of the first and second steel plates. Hot press forming is then performed to the first and second steel plates formed with the Fe—Al alloy layers, the first and second steel plates being superposed. The first and second steel plates, which are hot press formed, are then welded.
    Type: Application
    Filed: June 21, 2018
    Publication date: January 10, 2019
    Applicant: TOA Industries Co., Ltd.
    Inventors: Yasutaka SUZUKI, Tadashi IWANUMA, Ken-ichiro MORI, Yuki NAKAGAWA
  • Publication number: 20190009367
    Abstract: The invention provides manufacturing a partially reinforced press formed product with high corrosion resistance and antirust property without grain boundary cracks due to spot welding. First and second galvanized steel plates are heated to an austenite range temperature to transform the bodies of the first and second galvanized steel plates into austenite and form a zinc oxide film and a Fe—Zn solid solution phase on the surfaces of the first and second galvanized steel plates. Hot press forming is then performed to the first and second galvanized steel plates which are heated in the process mentioned above, the first and second galvanized steel plates being superposed. The first and second galvanized steel plates, which are hot press formed, are then welded.
    Type: Application
    Filed: June 21, 2018
    Publication date: January 10, 2019
    Applicant: TOA Industries Co., Ltd.
    Inventors: Yasutaka SUZUKI, Tadashi IWANUMA, Ken-ichiro MORI, Yuki NAKAGAWA
  • Publication number: 20180366650
    Abstract: The present invention relates to an organic charge transport layer having a low refractive index, and to an organic EL device, an organic semiconductor device, and an organic photoelectric device which are provided with the organic charge transport layer. An object of the present invention is to provide an organic semiconductor thin film having a dramatically reduced refractive index without impairing conductivity, by mixing a predetermined amount of an electret material into an organic semiconductor material. The organic charge transport layer according to the present invention is characterized by containing an organic semiconductor material and an electret material. It is preferable that the organic semiconductor material is a hole transport material and the electret material has a refractive index of 1.5 or lower.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 20, 2018
    Applicant: NATIONAL UNIVERSITY CORPORATION YAMAGATA UNIVERSITY
    Inventors: Daisuke YOKOYAMA, Yasutaka SUZUKI, Wataru AITA
  • Patent number: 10020322
    Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: July 10, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daigo Ito, Takahisa Ishiyama, Katsuaki Tochibayashi, Yoshinori Ando, Yasutaka Suzuki, Mitsuhiro Ichijo, Toshiya Endo, Shunpei Yamazaki
  • Publication number: 20180102420
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Application
    Filed: October 2, 2017
    Publication date: April 12, 2018
    Inventors: Yoshinori ANDO, Hidekazu MIYAIRI, Naoto YAMADE, Asako HIGA, Miki SUZUKI, Yoshinori IEDA, Yasutaka SUZUKI, Kosei NEI, Shunpei YAMAZAKI
  • Publication number: 20180033807
    Abstract: A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.
    Type: Application
    Filed: July 25, 2017
    Publication date: February 1, 2018
    Inventors: Shinpei MATSUDA, Daigo ITO, Daisuke MATSUBAYASHI, Yasutaka SUZUKI, Etsuko KAMATA, Yutaka SHIONOIRI, Shuhei NAGATSUKA
  • Publication number: 20180021833
    Abstract: The invention provides a hot press machine which reduces the cooling time of a superposed member and enhances the productivity. A hot press machine of the invention includes a first die, a second die disposed on the first die, a first refrigerant flow passage for guiding a refrigerant into the first die or the second die, a plurality of grooves formed in a press forming surface of the first die or the second die, and a second refrigerant flow passage for guiding a refrigerant into the grooves. The hot press machine performs press forming and quenching by pressing a superposed member between the first die and the second die, the superposed member comprising a first steel sheet and a second steel sheet superposed and joined on the first steel sheet.
    Type: Application
    Filed: July 6, 2017
    Publication date: January 25, 2018
    Applicant: TOA Industries Co., Ltd.
    Inventors: Yasutaka SUZUKI, Tadashi IWANUMA, Satoshi MIZUSHINA
  • Patent number: 9780201
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: October 3, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinori Ando, Hidekazu Miyairi, Naoto Yamade, Asako Higa, Miki Suzuki, Yoshinori Ieda, Yasutaka Suzuki, Kosei Nei, Shunpei Yamazaki
  • Patent number: 9696288
    Abstract: Provided is a technique to identify a sample substance attached to an inspection target easily and precisely, while improving the rate of operation and reducing the number of persons required for inspection. A trace detecting system includes detection means to detect the size (vertical and horizontal dimensions) of an inspection target, and selects an air nozzle capable of spraying air jet at 15 m/s or more to the surface of the inspection target for air jet spraying.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: July 4, 2017
    Assignee: HITACHI, LTD.
    Inventors: Hideo Kashima, Masakazu Sugaya, Koichi Terada, Yasunori Doi, Yasutaka Suzuki, Hisashi Nagano, Yuichiro Hashimoto, Yasuaki Takada
  • Publication number: 20170186779
    Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.
    Type: Application
    Filed: December 27, 2016
    Publication date: June 29, 2017
    Inventors: Daigo ITO, Takahisa ISHIYAMA, Katsuaki TOCHIBAYASHI, Yoshinori ANDO, Yasutaka SUZUKI, Mitsuhiro ICHIJO, Toshiya ENDO, Shunpei YAMAZAKI
  • Publication number: 20170015626
    Abstract: A two-photon-absorbing compound which is excellent in water-solubility, is excited by two-photon absorption in a near-infrared wavelength region, and emits a red fluorescence.
    Type: Application
    Filed: September 26, 2014
    Publication date: January 19, 2017
    Inventors: Yasutaka Suzuki, Jun Kawamata, Hiroki Moritomo, Makoto Tominaga, Gen-ichi Konishi, Yosuke Niko
  • Publication number: 20160336433
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Application
    Filed: July 29, 2016
    Publication date: November 17, 2016
    Inventors: Yoshinori ANDO, Hidekazu MIYAIRI, Naoto YAMADE, Asako HIGA, Miki SUZUKI, Yoshinori IEDA, Yasutaka SUZUKI, Kosei NEI, Shunpei YAMAZAKI
  • Patent number: 9431435
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: August 30, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinori Ando, Hidekazu Miyairi, Naoto Yamade, Asako Higa, Miki Suzuki, Yoshinori Ieda, Yasutaka Suzuki, Kosei Nei, Shunpei Yamazaki