Abstract: The invention provides a hot press machine which reduces the cooling time of a superposed member and enhances the productivity. A hot press machine of the invention includes a first die, a second die disposed on the first die, a first refrigerant flow passage for guiding a refrigerant into the first die or the second die, a plurality of grooves formed in a press forming surface of the first die or the second die, and a second refrigerant flow passage for guiding a refrigerant into the grooves. The hot press machine performs press forming and quenching by pressing a superposed member between the first die and the second die, the superposed member comprising a first steel sheet and a second steel sheet superposed and joined on the first steel sheet.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: Provided is a technique to identify a sample substance attached to an inspection target easily and precisely, while improving the rate of operation and reducing the number of persons required for inspection. A trace detecting system includes detection means to detect the size (vertical and horizontal dimensions) of an inspection target, and selects an air nozzle capable of spraying air jet at 15 m/s or more to the surface of the inspection target for air jet spraying.

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

Abstract: A two-photon-absorbing compound which is excellent in water-solubility, is excited by two-photon absorption in a near-infrared wavelength region, and emits a red fluorescence.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: Provided is an analyzer for a substance, including: a first particle holding unit having a tubular shape; a first intake pipe for sucking a gas from an upper side of the first particle holding unit to cause a cyclonic phenomenon inside the first particle holding unit; a first supply pipe for supplying a sample containing particles, the first supply pipe being connected to a side surface of the first particle holding unit; a first flow control unit for controlling a flow rate of a gas flowing into the first particle holding unit to hold the rotationally moving particles inside the first particle holding unit for a predetermined time period and then cause the particles to settle, the first flow control unit being connected to a lower part of the first particle holding unit; a first collection heating unit for collecting and heating the settled particles; and an analysis unit for analyzing a substance vaporized from the particles through the heating by the first collection heating unit, the analysis unit being c

Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.

Abstract: Sample fine particles attached to an inspection object are identified simply and with high accuracy, and an increase in operation rate and a decrease in device size are achieved. The inspection object is transported into a sampling chamber defined by a pair of side walls and an upper wall enclosing a part of a transport route of a transport unit. The inspection object is sprayed with compressed gas from an air nozzle, the peeled sample fine particles are aspirated into a collector, and the sample fine particles are separated from the aspirated gas for analysis. The air nozzle is disposed on one of the side walls defining the sampling chamber. The collector is disposed under the other side wall as a container independent from the sampling chamber.

Abstract: Provided is a technique of analyzing particles in real time while collecting and condensing the particles continuously. Gas and/or particles as a detection target substance that are attached to an authentication target 2 are removed by air flow from a blowing region 5. The removed sample is sucked and is condensed and sampled at a sampling region 10, and ions of the sample are generated at an ion source 21 and are then subjected to mass analysis at a mass analysis region 23. Determination of the obtained mass spectrum is made as to the presence or not of a mass spectrum derived from the detection target substance, and a monitor 27 displays a result thereof. Thereby, the detection target substance attached to the authentication target 2 can be detected continuously in real time, promptly and with a less error rate.

Abstract: Sample fine particles attached to an inspection object are identified simply and with high accuracy, and an increase in operation rate and a decrease in device size are achieved. The inspection object is transported into a sampling chamber defined by a pair of side walls and an upper wall enclosing a part of a transport route of a transport unit. The inspection object is sprayed with compressed gas from an air nozzle, the peeled sample fine particles are aspirated into a collector, and the sample fine particles are separated from the aspirated gas for analysis. The air nozzle is disposed on one of the side walls defining the sampling chamber. The collector is disposed under the other side wall as a container independent from the sampling chamber.

Abstract: Provided is a technique of analyzing particles in real time while collecting and condensing the particles continuously. Gas and/or particles as a detection target substance that are attached to an authentication target 2 are removed by air flow from a blowing region 5. The removed sample is sucked and is condensed and sampled at a sampling region 10, and ions of the sample are generated at an ion source 21 and are then subjected to mass analysis at a mass analysis region 23. Determination of the obtained mass spectrum is made as to the presence or not of a mass spectrum derived from the detection target substance, and a monitor 27 displays a result thereof. Thereby, the detection target substance attached to the authentication target 2 can be detected continuously in real time, promptly and with a less error rate.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.

Abstract: Provided is an analyzer for a substance, including: a first particle holding unit having a tubular shape; a first intake pipe for sucking a gas from an upper side of the first particle holding unit to cause a cyclonic phenomenon inside the first particle holding unit; a first supply pipe for supplying a sample containing particles, the first supply pipe being connected to a side surface of the first particle holding unit; a first flow control unit for controlling a flow rate of a gas flowing into the first particle holding unit to hold the rotationally moving particles inside the first particle holding unit for a predetermined time period and then cause the particles to settle, the first flow control unit being connected to a lower part of the first particle holding unit; a first collection heating unit for collecting and heating the settled particles; and an analysis unit for analyzing a substance vaporized from the particles through the heating by the first collection heating unit, the analysis unit being c

Abstract: Provided is a technique to identify a sample substance attached to an inspection target easily and precisely, while improving the rate of operation and reducing the number of persons required for inspection. A trace detecting system includes detection means to detect the size (vertical and horizontal dimensions) of an inspection target, and selects an air nozzle capable of spraying air jet at 15 m/s or more to the surface of the inspection target for air jet spraying.

Abstract: Provided is a technique of analyzing particles in real time while collecting and condensing the particles continuously. Gas and/or particles as a detection target substance that are attached to an authentication target 2 are removed by air flow from a blowing region 5. The removed sample is sucked and is condensed and sampled at a sampling region 10, and ions of the sample are generated at an ion source 21 and are then subjected to mass analysis at a mass analysis region 23. Determination of the obtained mass spectrum is made as to the presence or not of a mass spectrum derived from the detection target substance, and a monitor 27 displays a result thereof. Thereby, the detection target substance attached to the authentication target 2 can be detected continuously in real time, promptly and with a less error rate.

Abstract: A detector and an entry control system includes: an identifying unit including a surface to which an identification target is moved close; a blower supplying airflow along the surface; a sampling port sucking the airflow from the blower; an analyzing unit analyzing a compound sucked by the sampling port; a database unit including an analysis data; a determining unit determining an analyzed result based on the data of the database unit; and a control unit performing control in accordance with a determined result of the determining unit.

Abstract: A thin film transistor which includes a microcrystalline semiconductor film over a gate electrode with a gate insulating film interposed therebetween to be in an inner region in which end portions of microcrystalline semiconductor film are in an inside of end portions of the gate electrode, an amorphous semiconductor film which covers top and side surfaces of the microcrystalline semiconductor film, and an impurity semiconductor film to which an impurity element imparting one conductivity is added, and which forms a source region and a drain region, wherein the microcrystalline semiconductor film includes an impurity element serving as a donor is provided to reduce off current of a thin film transistor, to reduce reverse bias current of a diode, and to improve an image quality of a display device using a thin film transistor.