Patents by Inventor Yasutaka Suzuki

Yasutaka Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9431435
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: August 30, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinori Ando, Hidekazu Miyairi, Naoto Yamade, Asako Higa, Miki Suzuki, Yoshinori Ieda, Yasutaka Suzuki, Kosei Nei, Shunpei Yamazaki
  • Patent number: 9417163
    Abstract: Provided is an analyzer for a substance, including: a first particle holding unit having a tubular shape; a first intake pipe for sucking a gas from an upper side of the first particle holding unit to cause a cyclonic phenomenon inside the first particle holding unit; a first supply pipe for supplying a sample containing particles, the first supply pipe being connected to a side surface of the first particle holding unit; a first flow control unit for controlling a flow rate of a gas flowing into the first particle holding unit to hold the rotationally moving particles inside the first particle holding unit for a predetermined time period and then cause the particles to settle, the first flow control unit being connected to a lower part of the first particle holding unit; a first collection heating unit for collecting and heating the settled particles; and an analysis unit for analyzing a substance vaporized from the particles through the heating by the first collection heating unit, the analysis unit being c
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: August 16, 2016
    Assignee: HITACHI, LTD.
    Inventors: Hisashi Nagano, Yasuaki Takada, Yuichiro Hashimoto, Masakazu Sugaya, Hideo Kashima, Koichi Terada, Yasutaka Suzuki
  • Patent number: 9391157
    Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: July 12, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasutaka Suzuki, Yuki Hata, Yoshinori Ieda
  • Patent number: 9261437
    Abstract: Sample fine particles attached to an inspection object are identified simply and with high accuracy, and an increase in operation rate and a decrease in device size are achieved. The inspection object is transported into a sampling chamber defined by a pair of side walls and an upper wall enclosing a part of a transport route of a transport unit. The inspection object is sprayed with compressed gas from an air nozzle, the peeled sample fine particles are aspirated into a collector, and the sample fine particles are separated from the aspirated gas for analysis. The air nozzle is disposed on one of the side walls defining the sampling chamber. The collector is disposed under the other side wall as a container independent from the sampling chamber.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: February 16, 2016
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Kashima, Masakazu Sugaya, Koichi Terada, Yasutaka Suzuki, Hisashi Nagano, Yasuaki Takada, Yuichiro Hashimoto
  • Publication number: 20150233796
    Abstract: Sample fine particles attached to an inspection object are identified simply and with high accuracy, and an increase in operation rate and a decrease in device size are achieved. The inspection object is transported into a sampling chamber defined by a pair of side walls and an upper wall enclosing a part of a transport route of a transport unit. The inspection object is sprayed with compressed gas from an air nozzle, the peeled sample fine particles are aspirated into a collector, and the sample fine particles are separated from the aspirated gas for analysis. The air nozzle is disposed on one of the side walls defining the sampling chamber. The collector is disposed under the other side wall as a container independent from the sampling chamber.
    Type: Application
    Filed: June 12, 2013
    Publication date: August 20, 2015
    Inventors: Hideo Kashima, Masakazu Sugaya, Koichi Terada, Yasutaka Suzuki, Hisashi Nagano, Yasuaki Takada, Yuichiro Hashimoto
  • Publication number: 20150235831
    Abstract: Provided is a technique of analyzing particles in real time while collecting and condensing the particles continuously. Gas and/or particles as a detection target substance that are attached to an authentication target 2 are removed by air flow from a blowing region 5. The removed sample is sucked and is condensed and sampled at a sampling region 10, and ions of the sample are generated at an ion source 21 and are then subjected to mass analysis at a mass analysis region 23. Determination of the obtained mass spectrum is made as to the presence or not of a mass spectrum derived from the detection target substance, and a monitor 27 displays a result thereof. Thereby, the detection target substance attached to the authentication target 2 can be detected continuously in real time, promptly and with a less error rate.
    Type: Application
    Filed: May 5, 2015
    Publication date: August 20, 2015
    Applicant: HITACHI, LTD.
    Inventors: Hisashi Nagano, Yasutaka Suzuki, Hideo Kashima, Yuichiro Hashimoto, Masuyuki Sugiyama, Masakazu Sugaya, Yasunori Doi, Koichi Terada
  • Patent number: 9040905
    Abstract: Provided is a technique of analyzing particles in real time while collecting and condensing the particles continuously. Gas and/or particles as a detection target substance that are attached to an authentication target 2 are removed by air flow from a blowing region 5. The removed sample is sucked and is condensed and sampled at a sampling region 10, and ions of the sample are generated at an ion source 21 and are then subjected to mass analysis at a mass analysis region 23. Determination of the obtained mass spectrum is made as to the presence or not of a mass spectrum derived from the detection target substance, and a monitor 27 displays a result thereof. Thereby, the detection target substance attached to the authentication target 2 can be detected continuously in real time, promptly and with a less error rate.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: May 26, 2015
    Assignee: HITACHI, LTD.
    Inventors: Hisashi Nagano, Yasutaka Suzuki, Hideo Kashima, Yuichiro Hashimoto, Masuyuki Sugiyama, Masakazu Sugaya, Yasunori Doi, Koichi Terada
  • Publication number: 20150108475
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Application
    Filed: October 21, 2014
    Publication date: April 23, 2015
    Inventors: Yoshinori Ando, Hidekazu Miyairi, Naoto Yamade, Asako Higa, Miki Suzuki, Yoshinori Ieda, Yasutaka Suzuki, Kosei Nei, Shunpei Yamazaki
  • Publication number: 20150069383
    Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.
    Type: Application
    Filed: September 2, 2014
    Publication date: March 12, 2015
    Inventors: Yasutaka Suzuki, Yuki Hata, Yoshinori Ieda
  • Publication number: 20140260542
    Abstract: Provided is an analyzer for a substance, including: a first particle holding unit having a tubular shape; a first intake pipe for sucking a gas from an upper side of the first particle holding unit to cause a cyclonic phenomenon inside the first particle holding unit; a first supply pipe for supplying a sample containing particles, the first supply pipe being connected to a side surface of the first particle holding unit; a first flow control unit for controlling a flow rate of a gas flowing into the first particle holding unit to hold the rotationally moving particles inside the first particle holding unit for a predetermined time period and then cause the particles to settle, the first flow control unit being connected to a lower part of the first particle holding unit; a first collection heating unit for collecting and heating the settled particles; and an analysis unit for analyzing a substance vaporized from the particles through the heating by the first collection heating unit, the analysis unit being c
    Type: Application
    Filed: February 27, 2014
    Publication date: September 18, 2014
    Applicant: Hitachi, Ltd.
    Inventors: Hisashi NAGANO, Yasuaki TAKADA, Yuichiro HASHIMOTO, Masakazu SUGAYA, Hideo KASHIMA, Koichi TERADA, Yasutaka SUZUKI
  • Publication number: 20140238106
    Abstract: Provided is a technique to identify a sample substance attached to an inspection target easily and precisely, while improving the rate of operation and reducing the number of persons required for inspection. A trace detecting system includes detection means to detect the size (vertical and horizontal dimensions) of an inspection target, and selects an air nozzle capable of spraying air jet at 15 m/s or more to the surface of the inspection target for air jet spraying.
    Type: Application
    Filed: October 2, 2012
    Publication date: August 28, 2014
    Inventors: Hideo Kashima, Masakazu Sugaya, Koichi Terada, Yasunori Doi, Yasutaka Suzuki, Hisashi Nagano, Yuichiro Hashimoto, Yasuaki Takada
  • Publication number: 20140151543
    Abstract: Provided is a technique of analyzing particles in real time while collecting and condensing the particles continuously. Gas and/or particles as a detection target substance that are attached to an authentication target 2 are removed by air flow from a blowing region 5. The removed sample is sucked and is condensed and sampled at a sampling region 10, and ions of the sample are generated at an ion source 21 and are then subjected to mass analysis at a mass analysis region 23. Determination of the obtained mass spectrum is made as to the presence or not of a mass spectrum derived from the detection target substance, and a monitor 27 displays a result thereof. Thereby, the detection target substance attached to the authentication target 2 can be detected continuously in real time, promptly and with a less error rate.
    Type: Application
    Filed: November 8, 2011
    Publication date: June 5, 2014
    Applicant: HITACHI, LTD.
    Inventors: Hisashi Nagano, Yasutaka Suzuki, Hideo Kashima, Yuichiro Hashimoto, Masuyuki Sugiyama, Masakazu Sugaya, Yasunori Doi, Koichi Terada
  • Publication number: 20120139736
    Abstract: A detector and an entry control system includes: an identifying unit including a surface to which an identification target is moved close; a blower supplying airflow along the surface; a sampling port sucking the airflow from the blower; an analyzing unit analyzing a compound sucked by the sampling port; a database unit including an analysis data; a determining unit determining an analyzed result based on the data of the database unit; and a control unit performing control in accordance with a determined result of the determining unit.
    Type: Application
    Filed: August 28, 2009
    Publication date: June 7, 2012
    Inventors: Yasutaka Suzuki, Yasuaki Takada, Hisashi Nagano, Masakazu Sugaya
  • Patent number: 7786482
    Abstract: A thin film transistor which includes a microcrystalline semiconductor film over a gate electrode with a gate insulating film interposed therebetween to be in an inner region in which end portions of microcrystalline semiconductor film are in an inside of end portions of the gate electrode, an amorphous semiconductor film which covers top and side surfaces of the microcrystalline semiconductor film, and an impurity semiconductor film to which an impurity element imparting one conductivity is added, and which forms a source region and a drain region, wherein the microcrystalline semiconductor film includes an impurity element serving as a donor is provided to reduce off current of a thin film transistor, to reduce reverse bias current of a diode, and to improve an image quality of a display device using a thin film transistor.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: August 31, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Hosoya, Yasutaka Suzuki, Saishi Fujikawa
  • Publication number: 20090159885
    Abstract: A thin film transistor which includes a microcrystalline semiconductor film over a gate electrode with a gate insulating film interposed therebetween to be in an inner region in which end portions of microcrystalline semiconductor film are in an inside of end portions of the gate electrode, an amorphous semiconductor film which covers top and side surfaces of the microcrystalline semiconductor film, and an impurity semiconductor film to which an impurity element imparting one conductivity is added, and which forms a source region and a drain region, wherein the microcrystalline semiconductor film includes an impurity element serving as a donor is provided to reduce off current of a thin film transistor, to reduce reverse bias current of a diode, and to improve an image quality of a display device using a thin film transistor.
    Type: Application
    Filed: December 17, 2008
    Publication date: June 25, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Kunio HOSOYA, Yasutaka SUZUKI, Saishi FUJIKAWA
  • Patent number: 7535106
    Abstract: A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: May 19, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Osamu Shiono, Takao Ishikawa, Takashi Namekawa, Yasutaka Suzuki, Takashi Naito, Hiroki Yamamoto, Daigorou Kamoto, Ken Takahashi, Tadanori Segawa, Toshiya Satoh, Takao Miwa, Shigehisa Motowaki
  • Patent number: 7286453
    Abstract: A temperature sensor (131) detects a temperature of a spindle motor (121) of a rotary drive unit (120) for rotating a disk-shaped recording medium (1), and a temperature information acquiring unit (134A) acquires the temperatures as temperature information. An eccentricity detector (132) detects a drive voltage level, and an eccentricity information acquiring unit (134B) acquires the drive voltage level as eccentricity information. When a determining unit (134C) determines that the temperature is higher than a predetermined temperature or that the drive voltage level is higher than a predetermined voltage, a servo controller (133) switches a rotation mode from constant liner velocity to constant angular velocity. That enables stable information processing over a long time with a simple strucure for constant linear velocity.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: October 23, 2007
    Assignee: Pioneer Corporation
    Inventors: Yasutaka Suzuki, Kazunori Matsuo
  • Patent number: 7259936
    Abstract: A glass substrate for a magnetic disk contains a transition metal. The substrate, which is subjected to formation of zone texturing by irradiating the substrate with a laser beam, has a high mechanical strength even if it is not chemically strengthened. The glass substrate contains a transition metal element and has a transmittance of 10% of less for light in a wavelength range of 300 to 2000 nm. The surface roughness of an information recording surface portion thereof is 2.0 nm or less. In addition to a transition metal element, the glass substrate may include a rare earth metal element.
    Type: Grant
    Filed: November 8, 2005
    Date of Patent: August 21, 2007
    Assignee: Hitachi Global Storage Technologies Japan, Ltd.
    Inventors: Hiroki Yamamoto, Takashi Namekawa, Takashi Naito, Yasutaka Suzuki, Akira Kato, Noriyuki Takeo, Kiyoshi Akamatsu, Youichi Inomata, Masatomo Terakado, Ken Takahashi
  • Publication number: 20070114653
    Abstract: A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.
    Type: Application
    Filed: January 24, 2007
    Publication date: May 24, 2007
    Applicants: Hitachi, Ltd., Renesas Technology Corp.
    Inventors: Osamu Shiono, Takao Ishikawa, Takashi Namekawa, Yasutaka Suzuki, Takashi Naito, Hiroki Yamamoto, Daigoro Kamoto, Ken Takahashi, Tadanori Segawa, Toshiya Sato, Takao Miwa, Shigehisa Motowaki
  • Patent number: 7183650
    Abstract: A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.
    Type: Grant
    Filed: July 12, 2002
    Date of Patent: February 27, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Osamu Shiono, Takao Ishikawa, Takashi Namekawa, Yasutaka Suzuki, Takashi Naito, Hiroki Yamamoto, Daigoro Kamoto, Ken Takahashi, Tadanori Segawa, Toshiya Sato, Takao Miwa, Shigehisa Motowaki