Abstract: An information processing apparatus comprises a processor configured to execute a program so as to: acquire viewpoint information, motion information and object information; process an object image wherein: the object image is an image representing a virtual substance and is updated based on the viewpoint information and the motion information; calculate a position when superimposing a background image and the object image, wherein: the background image is an image according to the field of view of the user; generate visual information superimposing the background image and the object image based on the position calculated, and output the generated visual information to a display device; and generate tactile information for an ultrasound generator irradiating the user with ultrasound corresponding to the object based on the position calculated, the motion information and the object information, and output the generated tactile information to the ultrasound generator.

Abstract: An information processing apparatus includes a rewriting unit and an execution unit. The rewriting unit rewrites a first instruction described at a trace point in a function defined in a program to a second instruction which gives instructions to execute a trace code, and stores the first instruction in a storage unit. The execution unit executes the trace code on the basis of the second instruction at the time of execution at the trace point in the function. If a third instruction which calls the function is included in the trace code, the execution unit replaces, at the time of executing the third instruction, the second instruction at the trace point in the function with the first instruction stored in the storage unit, and performs the function.

Abstract: A non-transitory computer-readable recording medium stores a memory management program that causes a computer to execute a process. The process includes detecting writing into a memory; and saving, in association with each other in a predetermined storage area, data before the writing which is stored in a data area of a write destination of the detected writing, and context information of a processor at a time of detecting the writing into the memory.

Abstract: A non-transitory computer-readable recording medium stores a memory management program that causes a computer to execute a process. The process includes detecting writing into a memory; and saving, in association with each other in a predetermined storage area, data before the writing which is stored in a data area of a write destination of the detected writing, and context information of a processor at a time of detecting the writing into the memory.

Abstract: An information processing device includes a processor that performs a process. The process includes: when the information stored in the first storage unit is stored in the second storage unit, storing the storing completion information corresponding to the stored information in the storing completion information storing unit; detecting a failure in the information processing device; performing a restart process on the information processing device using a region in which the stored information has been stored in the first storage unit on the basis of the storing completion information when the failure is detected; and discriminating information that has not been stored in the second storage unit from among the pieces of information stored in the first storage unit on the basis of the storing completion information when the failure is detected, and storing the discriminated information in the second storage unit.

Abstract: An information processing apparatus includes a rewriting unit and an execution unit. The rewriting unit rewrites a first instruction described at a trace point in a function defined in a program to a second instruction which gives instructions to execute a trace code, and stores the first instruction in a storage unit. The execution unit executes the trace code on the basis of the second instruction at the time of execution at the trace point in the function. If a third instruction which calls the function is included in the trace code, the execution unit replaces, at the time of executing the third instruction, the second instruction at the trace point in the function with the first instruction stored in the storage unit, and performs the function.

Abstract: The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.

Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

Abstract: An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.

Abstract: A micro device having a micro system structure includes a protection film disposed on the micro system structure for protecting from a particle. The protection film includes a first protection film having a Vickers hardness equal to or larger than 2500 Hv or a nano indentation hardness equal to or larger than 13.64 GPa. The first protection film has a thickness in a range between 0.1 ?m and 30 ?m. The protection film has a total stress defined as a product of a film stress and a film thickness, and the total stress is equal to or smaller than 700 N/m.

Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

Abstract: An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.

Abstract: An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.

Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

Abstract: A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.

Abstract: An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.

Abstract: A gas sensor includes a semiconductor substrate and a sensing membrane. The sensing membrane is located at the bottom of a recess, which is formed by etching the substrate, and includes a heater, heater extension electrodes, a gas sensitive film, and gas-sensitive-film extension electrodes. A first end of each heater extension electrode is in contact with the heater, and a second end of each heater extension electrode extends outward from the sensing membrane. A first end of each gas-sensitive-film extension electrode is in contact with the gas sensitive film, and a second end of each gas-sensitive-film extension electrode extends outward from the sensing membrane. All of the heater, the heater extension electrodes, and the gas-sensitive-film extension electrodes are made of polycrystalline silicon.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.