Abstract: A binary-type optical diffraction device having the excellent capability of antireflection includes a step structure by which lens elements of a Fresnel lens are approximated. The surface of the steps formed on a substrate is entirely covered with a thin film having a flat surface. The height of each step and the refractive index of the thin film are selected so that the antireflection conditions for the respective steps are satisfied and thus the intensity of the reflected light rays is minimized.

Abstract: An optical element manufacturing method includes a first process for forming a mask pattern on a substrate, and a second process for forming a step-like structure on the substrate by use of the mask pattern, wherein the first and second processes are repeated N times, and wherein, before execution of the (k)th time second process where 2≦k≦N, there is a process for determining a relative alignment error between a mask pattern as formed through the (k)th time first process and a mask pattern as formed through the (k−1)th time first process, and wherein the height of the step-like structure to be defined by the (k)th time second process is determined in accordance with the alignment error.

Abstract: An optical element manufacturing method includes a first process for forming a mask pattern on a substrate, and a second process for forming a step-like structure on the substrate by use of the mask pattern, wherein the first and second processes are repeated N times, and wherein, before execution of the (k)th time second process where 2.ltoreq.k.ltoreq.N, there is a process for determining a relative alignment error between a mask pattern as formed through the (k)th time first process and a mask pattern as formed through the (k-1)th time first process, and wherein the height of the step-like structure to be defined by the (k)th time second process is determined in accordance with the alignment error.

Abstract: A scanning type exposure apparatus includes an illumination device for Illuminating a mask, a projection device for projecting a pattern of the mask onto a substrate and a scanning device for scanning, in a scanning direction, the mask and the substrate relative to the illumination device and the projection device, respectively. The projection device includes a stop device for setting an effective numerical aperture in the scanning direction to be larger than an effective numerical aperture in a direction perpendicular to the scanning direction. Also disclosed are various photomasks, as well as a scanning type exposure apparatus which scans and exposes a substrate by using such photomasks and a device manufacturing method that includes a step of transferring a device pattern onto a substrate by using such photomasks.

Abstract: A binary-type optical diffraction device having the excellent capability of antireflection includes a step structure by which lens elements of a Fresnel lens are approximated. The surface of the steps formed on a substrate is entirely covered with a thin film having a flat surface. The height of each step and the refractive index of the thin film are selected so that the antireflection conditions for the respective steps are satisfied and thus the intensity of the reflected light rays is minimized.

Abstract: A projection optical apparatus includes a projection optical system including lenses, a measurement unit for measuring a change in the shape of one of the lenses, and an adjustment unit for adjusting the optical characteristics of the projection optical system in accordance with a signal from the measurement unit. Since a change in the shape of the lens due to a thermal change of the lens is directly measured and optical characteristics of the projection optical system are adjusted in accordance with the result of the measurement, projection can be performed with high stability and precision.

Abstract: In a projection apparatus and method, a mask and a substrate are scanned relative to an exposure beam in a scanning direction, with the exposure beam having a direction of polarization. The mask contains at least first and second patterns, with the first pattern extending in a different longitudinal direction than the second pattern, and the first and second patterns being formed at different positions with respect to the scanning direction. The direction of polarization of the exposure beam is changed during the scanning operation so that each of the first and second patterns is exposed to a polarized light beam which is polarized in the same direction as the longitudinal direction of the pattern.

Abstract: A scanning type exposure apparatus includes an illumination device for illuminating a mask, a projection device for projecting a pattern of the mask onto a substrate and a scanning device for scanning, in a scanning direction, the mask and the substrate relative to the illumination device and the projection device, respectively. The projection device includes a stop device for setting an effective numerical aperture in the scanning direction to be larger than an effective numerical aperture in a direction perpendicular to the scanning direction. Also disclosed are various photomasks, as well as a scanning type exposure apparatus which scans and exposes a substrate by using such photomasks and a device manufacturing method that includes a step of transferring a device pattern onto a substrate by using such photomasks.

Abstract: A projection exposure apparatus includes a projection optical system for projecting a pattern of a first object onto a second object, and a correcting device for substantially correcting rotational asymmetry in optical characteristic of the projection optical system to be produced in the projection optical system with an exposure process.

Abstract: A scanning projection exposure apparatus includes an imaging system for imaging a pattern of an original, placed on an object plane, upon a substrate, and a scanning device for relatively scanning the original and the substrate relative to the imaging system, wherein the imaging system provides different imaging positions with respect to a direction of an optical axis, to plural zones on the object plane, which zones are juxtaposedly defined along a direction of scan.

Abstract: An image of a fine pattern having light-projecting portions and non-light-projecting portions is formed by illuminating the fine pattern. Upon illumination of the fine pattern, light beams are projected from respective light-projecting portions of the pattern onto an image-forming surface to form an image. Coherency of light beams from respective adjacent light-projecting portions is reduced to provide an image of the fine pattern having high contrast.

Abstract: A projective exposure apparatus for imaging a pattern formed on an original onto a substrate at a predetermined magnification to form a pattern image on the substrate includes an original support member, a substrate support member, and a projection lens disposed between these support members for imaging the pattern onto the substrate. In the projection exposure apparatus, a partial deviation of positions of portions of the pattern image from regular positions are obtained in at least one of the directions along and perpendicular to a surface of the pattern image, and the partial deviation is eliminated by deforming at least one of the original and the substrate based on the thus obtained result.