Abstract: An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area. The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.

Abstract: Warp of a circuit device manufactured by the wafer level packaging technology is reduced. A semiconductor substrate used in a circuit device is provided with a circuit device and electrodes connected to the circuit device. A wiring layer having bumps connected to the electrodes is provided on a major surface of the semiconductor substrate. A metal layer is provided on a surface opposite to the major surface of the semiconductor substrate.