Abstract: An electric heating cloth having gaps and a connection structure thereof are disclosed. The electric heating cloth having gaps comprises plural conductive yarns arranged in a first direction and plural textile yarns and plural metal conductive wires arranged in a second direction for interweaving with the plural conductive yarns. The plural metal conductive wires are aligned at external sides of the plural textile yarns to form a first conductive side and a second conductive side respectively, and each of the first conductive side and the second conductive side has plural gaps.

Abstract: A semiconductor device having a channel formed from a nanowire with a multi-dimensional diameter is provided. The semiconductor device comprises a drain region formed on a semiconductor substrate. The semiconductor device further comprises a nanowire structure formed between a source region and the drain region. The nanowire structure has a first diameter section joined with a second diameter section. The first diameter section is coupled to the drain region and has a diameter greater than the diameter of the second diameter section. The second diameter section is coupled to the source region. The semiconductor device further comprises a gate region formed around the junction at which the first diameter section and the second diameter section are joined.

Abstract: An energy efficient vehicle is provided. Wheels are disposed on the front and rear sides of the car body. A gasoline engine in the car body is used to drive an electricity generator to produce electric energy transferred to a capacitive battery, and then to a multi-loop disc-type dynamic motor. The multi-loop disc-type dynamic motor drives the car by rotating the wheels through a transmission and a differential. The multi-loop disc-type dynamic motor can produce large torque and horsepower through multiple stator rings disposed on a stator base and multiple permanent magnetic sheets disposed on the multiple annular ribs of a rotor base. Therefore, the electricity can be saved to elevate the endurance of the vehicle, and the vehicle does not need to stop for charging.

Abstract: A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.

Abstract: An intelligent apparatus system for battery thermal insulation and protection is disclosed. It comprises a heating fabric cloth having plural conductive yarns arranged in a first direction, plural textile yarns and plural metal conductive wires arranged in a second direction for wrapping a battery assembly for temperature maintenance; a power supply electrically connected to the heating fabric cloth; and a temperature controlling circuit electrically connected to the heating fabric cloth and the power supply. Each of the plural conductive yarns comprises a plurality of filaments and an electric heating wire winding around the plurality of filaments.

Abstract: A wireless hearing-aid circumaural headphone is revealed. The wireless hearing-aid circumaural headphone includes a wireless headphone disposed with a wireless audio receiver, and a wireless audio transmitter electrically connected to the wireless audio receiver. The wireless audio receiver consists of an audio output module, a receiving antenna and a microphone receiver module. The wireless audio transmitter is composed of an audio input module, a microphone input module and a transmitting antenna.

Abstract: A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.

Abstract: A multi-ring disc motor is revealed. The multi-ring disc motor includes a plurality of stator rings and a plurality of permanent magnets. The stator rings are disposed in a stator base and the permanent magnets are mounted on a plurality of circular ribs of a rotor base. The permanent magnets on the respective circular rib of the rotor base are corresponding to a coil on the stator ring in a respective circular groove of the stator base by the stator base and the rotor base connected to each other. Thereby high torque and high horsepower are generated by the stator rings on the stator base and the permanent magnets on the circular ribs of the rotor base. The power consumption is reduced effectively. Thus the battery life of vehicles such as cars is extended and this eliminates the needs to stop for charging.

Abstract: An energy efficient vehicle is provided. Wheels are disposed on the front and rear sides of the car body. A gasoline engine in the car body is used to drive an electricity generator to produce electric energy transferred to a capacitive battery, and then to a multi-loop disc-type dynamic motor. The multi-loop disc-type dynamic motor drives the car by rotating the wheels through a transmission and a differential. The multi-loop disc-type dynamic motor can produce large torque and horsepower through multiple stator rings disposed on a stator base and multiple permanent magnetic sheets disposed on the multiple annular ribs of a rotor base. Therefore, the electricity can be saved to elevate the endurance of the vehicle, and the vehicle does not need to stop for charging.

Abstract: An automatic and intelligent clutch-type wind turbine system clutch-type wind turbine system is revealed. A rotor-blade base is disposed with rotor blades and connected to a main shaft. A gearbox of a split gearbox is connected to the main shaft while a turbine-driven set of the split gearbox is connected to a power shaft. A plurality of sets of disc generators is connected to the power shaft and a synchronous clutch is arranged between the two adjacent disc generators. A battery is connected to each disc generator. Thereby electricity is generated by the wind turbine system without being affected by wind force from surrounding area and the electricity is not wasted on braking. During the electricity generation process, the energy stored is converted into kinetic energy for assistance in generating electricity. Thus not only the power generation efficiency is improved, the total production cost is also reduced.

Abstract: A monitoring and hearing aid headphone intercom system is revealed. The system includes one primary headphone, at least one secondary headphone and a terminal device. The primary headphone is disposed with a first Bluetooth module, a first ISM (Industrial Scientific Medical) module, a first microphone set, and a first wired connection module. The secondary headphone is arranged with a second Bluetooth module, a second ISM (Industrial Scientific Medical) module, and a second microphone set. The secondary headphone is connected to the primary headphone by the second ISM module while the terminal device is connected to either the primary headphone or the secondary headphone by a third Bluetooth module or an input cable. Thereby audio signals the primary headphone received are shared with the secondary headphone. Users of the primary headphone and the secondary headphone can interact with each other.

Abstract: The present invention relates to a method for treating a refractory or relapsed lung cancer. Particularly, the invention provides a method and a formulation of using an immunomodulatory protein derived from Ganoderma microsporum in the treatment of a refractory or relapsed lung cancer.

Abstract: The present disclosure relates to a transistor device having an epitaxial carbon layer and/or a carbon implantation region that provides for a low variation of voltage threshold, and an associated method of formation. In some embodiments, the transistor device has an epitaxial region arranged within a recess within a semiconductor substrate. The epitaxial region has a carbon doped silicon epitaxial layer and a silicon epitaxial layer disposed onto the carbon doped silicon epitaxial layer. A gate structure is arranged over the silicon epitaxial layer. The gate structure has a gate dielectric layer disposed onto the silicon epitaxial layer and a gate electrode layer disposed onto the gate dielectric layer. A source region and a drain region are arranged on opposing sides of a channel region disposed below the gate structure.

Abstract: A semiconductor device includes a nanowire structure and a stressor. The nanowire structure includes a first channel section and a second channel section. The stressor subjects the first channel section to a first strain level and the second channel section to a second strain level greater than the first strain level. The difference between the second strain level and the first strain level is less than the second strain level.

Abstract: A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a channel in a semiconductor composite. The active area includes a first active area layer having a first dopant concentration, a second active area layer having a second dopant concentration over the first active area layer, and a third active area layer having a third dopant concentration, over the second active area. The third dopant concentration is greater than the second dopant concentration, and the second dopant concentration is greater than the first dopant concentration. The channel includes a second channel layer comprising carbon over a first channel layer and a third channel layer over the second channel layer. The active area configuration improves drive current and reduces contact resistance, and the channel configuration increases short channel control, as compared to a semiconductor device without the active area and channel configuration.

Abstract: A semiconductor device is provided having a channel formed from a nanowire with multi-level band gap energy. The semiconductor device comprises a nanowire structure formed between source and drain regions. The nanowire structure has a first band gap energy section joined with a second band gap energy section. The first band gap energy section is coupled to the source region and has a band gap energy level greater than the band gap energy level of the second band gap energy section. The second band gap energy section is coupled to the drain region. The first band gap energy section comprises a first material and the second band gap energy section comprises a second material wherein the first material is different from the second material. The semiconductor device further comprises a gate region around the junction between the first band gap energy section and the second band gap energy section.

Abstract: A semiconductor device with multi-level work function and multi-valued channel doping is provided. The semiconductor device comprises a nanowire structure and a gate region. The nanowire structure is formed as a channel between a source region and a drain region. The nanowire structure has a first doped channel section joined with a second doped channel section. The first doped channel section is coupled to the source region and has a doping concentration greater than the doping concentration of the second doped channel section. The second doped channel section is coupled to the drain region. The gate region is formed around the junction at which the first doped section and the second doped section are joined. The gate region has a first work function gate section joined with a second work function gate section. The first work function gate section is located adjacent to the source region and has a work function greater than the work function of the second work function gate section.

Abstract: The present invention relates to a method for treating a refractory or relapsed lung cancer. Particularly, the invention provides a method and a formulation of using an immunomodulatory protein derived from Ganoderma microsporum in the treatment of a refractory or relapsed lung cancer.

Abstract: A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.

Abstract: Some embodiments of the present disclosure relate to a semiconductor device configured to mitigate against parasitic coupling while maintaining threshold voltage control for comparatively narrow transistors. In some embodiments, a semiconductor device formed on a semiconductor substrate. The semiconductor device comprises a channel comprising an epitaxial layer that forms an outgrowth above the surface of the semiconductor substrate, and a gate material formed over the epitaxial layer. In some embodiments, a method of forming a semiconductor device is disclosed. The method comprises etching the surface of a semiconductor substrate to form a recess between first and second isolation structures, forming an epitaxial layer within the recess that forms an outgrowth above the surface of the semiconductor substrate, and forming a gate material over the epitaxial layer. Other embodiments are also disclosed.