Abstract: A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.

Abstract: A method for introducing and playing a media is disclosed, in which the method is implemented through a display device that is capable of linking to a network. In the method, detection is performed to determine whether a display of the display device shows a channel preview frame, and a plurality of preliminary previews are automatically and sequentially played when the channel preview frame is showing on the display. Further, detection is performed to determine whether a user selects one of the preliminary previews, and the user is provided with options of channel subscribing or detailed preview when the user selects one of the preliminary previews. Next, a fee paying procedure is executed when the user chooses to subscribe to the channel, and a channel information of the channel subscribed to is set.

Abstract: A split contact structure includes a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the first upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region.

Abstract: Immunogenic compositions, cancer vaccines and methods for treating cancer comprising FMS, the fucose-enriched polysaccharide fraction from Reishi F3, are provided. Compositions comprise fucose-enriched Reishi polysaccharide fraction (FMS) MW=˜35 kDa, wherein the FMS is isolated by size-exclusion chromatography from Reishi F3, and the FMS comprises polysaccharides having primarily a backbone selected from 1,4-mannan and 1,6-?-galactan, wherein the backbone is linked to a terminal fucose-containing side-chain Immunogenic compositions comprising glycolipid adjuvants are provided. Antibodies generated by immunogenic compositions disclosed herein bind cancer cells comprising antigens Globo H, Globo H, Gb3, Gb4, Gb5 (SSEA-3) and SSEA-4 on the cell surface.

Abstract: An information exchange method includes steps of shaking a first electronic device and a second electronic device simultaneously; recording a first vibration waveform of the first electronic device and recording a second vibration waveform of the second electronic device; determining whether the first vibration waveform and the second vibration waveform match each other; and transmitting a first information related to the first electronic device to the second electronic device when the first vibration waveform and the second vibration waveform match each other.

Abstract: The present disclosure relates to a transistor device having an epitaxial carbon layer and/or a carbon implantation region that provides for a low variation of voltage threshold, and an associated method of formation. In some embodiments, the transistor device has an epitaxial region arranged within a recess within a semiconductor substrate. The epitaxial region has a carbon doped silicon epitaxial layer and a silicon epitaxial layer disposed onto the carbon doped silicon epitaxial layer. A gate structure is arranged over the silicon epitaxial layer. The gate structure has a gate dielectric layer disposed onto the silicon epitaxial layer and a gate electrode layer disposed onto the gate dielectric layer. A source region and a drain region are arranged on opposing sides of a channel region disposed below the gate structure.

Abstract: A semiconductor device includes a nanowire structure and a stressor. The nanowire structure includes a first channel section and a second channel section. The stressor subjects the first channel section to a first strain level and the second channel section to a second strain level greater than the first strain level. The difference between the second strain level and the first strain level is less than the second strain level.

Abstract: The present disclosure relates to a method of forming a transistor device having a carbon implantation region that provides for a low variation of voltage threshold, and an associated apparatus. The method is performed by forming a well region within a semiconductor substrate. The semiconductor substrate is selectively etched to form a recess within the well region. After formation of the recess, a carbon implantation is selectively performed to form a carbon implantation region within the semiconductor substrate at a position underlying the recess. An epitaxial growth is then performed to form one or more epitaxial layers within the recess at a position overlying the carbon implantation region. Source and drain regions are subsequently formed within the semiconductor substrate such that a channel region, comprising the one or more epitaxial layers, separates the source/drains from one another.

Abstract: A semiconductor device with variable channel strain is provided. The semiconductor device comprises a nanowire structure formed as a channel between a source region and a drain region. The nanowire structure has a first channel section subjected to a first strain level and joined with a second channel section subjected to a second strain level different from the first strain level. The first channel section is coupled adjacent to the drain region and the second channel section is coupled adjacent to the source region. The semiconductor device further comprises a gate region that has a first strain section and a second strain section. The first strain section is configured to cause the first channel section to be subjected to the first strain level and the second strain section is configured to cause the second channel section to be subjected to the second strain level.

Abstract: A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a channel in a semiconductor composite. The active area includes a first active area layer having a first dopant concentration, a second active area layer having a second dopant concentration over the first active area layer, and a third active area layer having a third dopant concentration, over the second active area. The third dopant concentration is greater than the second dopant concentration, and the second dopant concentration is greater than the first dopant concentration. The channel includes a second channel layer comprising carbon over a first channel layer and a third channel layer over the second channel layer. The active area configuration improves drive current and reduces contact resistance, and the channel configuration increases short channel control, as compared to a semiconductor device without the active area and channel configuration.

Abstract: Some embodiments of the present disclosure relate to a semiconductor device configured to mitigate against parasitic coupling while maintaining threshold voltage control for comparatively narrow transistors. In some embodiments, a semiconductor device formed on a semiconductor substrate. The semiconductor device comprises a channel comprising an epitaxial layer that forms an outgrowth above the surface of the semiconductor substrate, and a gate material formed over the epitaxial layer. In some embodiments, a method of forming a semiconductor device is disclosed. The method comprises etching the surface of a semiconductor substrate to form a recess between first and second isolation structures, forming an epitaxial layer within the recess that forms an outgrowth above the surface of the semiconductor substrate, and forming a gate material over the epitaxial layer. Other embodiments are also disclosed.

Abstract: Some embodiments of the present disclosure relate to an epitaxially grown replacement channel region within a transistor, which mitigates the variations within the channel of the transistor due to fluctuations in the manufacturing processes. The replacement channel region is formed by recessing source/drain and channel regions of the semiconductor substrate, and epitaxially growing a replacement channel region within the recess, which comprises epitaxially growing a lower epitaxial channel region over a bottom surface of the recess, and epitaxially growing an upper epitaxial channel region over a bottom surface of the recess. The lower epitaxial channel region retards dopant back diffusion from the upper epitaxial channel region, resulting in a steep retrograde dopant profile within the replacement channel region. The upper epitaxial channel region increases carrier mobility within the channel.

Abstract: A transmitting device includes a transmitting chain, a configurable power amplifier device and an impedance tuning circuit. The transmitting chain is arranged to generate a radio frequency signal. The configurable power amplifier device is arranged to support at least a first power amplifier configuration and a second power amplifier configuration, wherein the configurable power amplifier device employs the first power amplifier configuration to receive and amplify the radio frequency signal when the transmitting device is operated in a first operation mode, and employs the second power amplifier configuration to receive and amplify the radio frequency signal when the transmitting device is operated in a second operation mode. The impedance tuning circuit is arranged to adjust an output impedance of the configurable power amplifier device employing the second power amplifier configuration when the transmitting device is operated in the second operation mode.

Abstract: A semiconductor device with multi-level work function and multi-valued channel doping is provided. The semiconductor device comprises a nanowire structure and a gate region. The nanowire structure is formed as a channel between a source region and a drain region. The nanowire structure has a first doped channel section joined with a second doped channel section. The first doped channel section is coupled to the source region and has a doping concentration greater than the doping concentration of the second doped channel section. The second doped channel section is coupled to the drain region. The gate region is formed around the junction at which the first doped section and the second doped section are joined. The gate region has a first work function gate section joined with a second work function gate section. The first work function gate section is located adjacent to the source region and has a work function greater than the work function of the second work function gate section.

Abstract: A semiconductor device is provided having a channel formed from a nanowire with multi-level band gap energy. The semiconductor device comprises a nanowire structure formed between source and drain regions. The nanowire structure has a first band gap energy section joined with a second band gap energy section. The first band gap energy section is coupled to the source region and has a band gap energy level greater than the band gap energy level of the second band gap energy section. The second band gap energy section is coupled to the drain region. The first band gap energy section comprises a first material and the second band gap energy section comprises a second material wherein the first material is different from the second material. The semiconductor device further comprises a gate region around the junction between the first band gap energy section and the second band gap energy section.

Abstract: A semiconductor device having a channel formed from a nanowire with a multi-dimensional diameter is provided. The semiconductor device comprises a drain region formed on a semiconductor substrate. The semiconductor device further comprises a nanowire structure formed between a source region and the drain region. The nanowire structure has a first diameter section joined with a second diameter section. The first diameter section is coupled to the drain region and has a diameter greater than the diameter of the second diameter section. The second diameter section is coupled to the source region. The semiconductor device further comprises a gate region formed around the junction at which the first diameter section and the second diameter section are joined.

Abstract: The present disclosure relates to a method of forming a transistor device having a carbon implantation region that provides for a low variation of voltage threshold, and an associated apparatus. The method is performed by forming a well region within a semiconductor substrate. The semiconductor substrate is selectively etched to form a recess within the well region. After formation of the recess, a carbon implantation is selectively performed to form a carbon implantation region within the semiconductor substrate at a position underlying the recess. An epitaxial growth is then performed to form one or more epitaxial layers within the recess at a position overlying the carbon implantation region. Source and drain regions are subsequently formed within the semiconductor substrate such that a channel region, comprising the one or more epitaxial layers, separates the source/drains from one another.

Abstract: A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.

Abstract: A method for introducing and playing a media is disclosed, in which the method is implemented through a display device that is capable of linking to a network. In the method, detection is performed to determine whether a display of the display device shows a channel preview frame, and a plurality of preliminary previews are automatically and sequentially played when the channel preview frame is showing on the display. Further, detection is performed to determine whether a user selects one of the preliminary previews, and the user is provided with options of channel subscribing or detailed preview when the user selects one of the preliminary previews. Next, a fee paying procedure is executed when the user chooses to subscribe to the channel, and a channel information of the channel subscribed to is set.

Abstract: An information exchange method includes steps of shaking a first electronic device and a second electronic device simultaneously; recording a first vibration waveform of the first electronic device and recording a second vibration waveform of the second electronic device; determining whether the first vibration waveform and the second vibration waveform match each other; and transmitting a first information related to the first electronic device to the second electronic device when the first vibration waveform and the second vibration waveform match each other.