Abstract: A viewing angle switch module including a viewing angle limiting device and a first electrically controlled viewing angle switch device is provided. A plurality of first block walls of the viewing angle limiting device are arranged along a first direction and extended in a second direction. The first electrically controlled viewing angle switch device has a first liquid crystal layer, a first polarizer and a second polarizer. An angle of 90±20 degrees is included between an optical axis of the first liquid crystal layer and the first direction. The first polarizer and the second polarizer are respectively located at two opposite sides of the first liquid crystal layer. An absorption axis of the first polarizer and a, absorption axis of the second polarizer are parallel to or perpendicular to the first direction. A display apparatus adopting the viewing angle switch module is also provided.

Abstract: An antenna structure includes a metal mechanism element, a ground element, a feeding radiation element, and a dielectric substrate. The metal mechanism element has a slot. The slot has a first closed end and a second closed end. The ground element is coupled to the metal mechanism element. The feeding radiation element has a feeding point. The feeding radiation element is coupled to the ground element. The dielectric substrate has a first surface and a second surface which are opposite to each other. The feeding radiation element is disposed on the first surface of the dielectric substrate. The second surface of the dielectric substrate is adjacent to the metal mechanism element. The slot of the metal mechanism element is excited to generate a first frequency band and a second frequency band. The feeding radiation element is excited to generate a third frequency band.

Abstract: A photographing optical system includes eight lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. The eight lens elements each have an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has positive refractive power. The fifth lens element has positive refractive power. The object-side surface of the seventh lens element is convex in a paraxial region thereof. The image-side surface of the eighth lens element is concave in a paraxial region thereof. At least one lens surface of at least one lens element of the photographing optical system has at least one critical point in an off-axis region thereof.

Abstract: A high electron mobility transistor includes a channel layer, a barrier layer, a first compound semiconductor layer, and a second compound semiconductor layer. The channel layer is disposed on the substrate, and the barrier layer is disposed on the channel layer. The first compound semiconductor layer is disposed on the barrier layer. The second compound semiconductor layer is disposed between the barrier layer and the first compound semiconductor layer, where the first compound semiconductor layer and the second compound semiconductor layer include a concentration distribution of metal dopant, and the concentration distribution of metal dopant includes a first peak in the first compound semiconductor layer and a second peak in the second compound semiconductor layer.

Abstract: An electronic assembly is provided, including a wiring board, a control element, and a pair of first internal electrical connectors. The wiring board includes a mounting surface, a first patterned conductive layer, a plurality of second patterned conductive layers, a plurality of near conductive holes, a plurality of far conductive holes, and a first conductive path. The first patterned conductive layer is located between the mounting surface and the second patterned conductive layers. The control element is mounted on the mounting surface of the wiring board. The pair of first internal electrical connectors are mounted on the mounting surface of the wiring board, and are adapted for mounting a pair of memory modules. The first conductive path extends from the control element at least through the corresponding second patterned conductive layer and the first patterned conductive layer to the pair of first internal electrical connectors.

Abstract: A multi-functional control device includes a casing unit, and press button modules disposed on a main circuit board in the casing unit. Each press button module includes a sub-circuit board connected to the main circuit board, a micro-contact switch mounted on the sub-circuit board, an auxiliary case removably mounted on the micro-contact switch, a driving circuit board removably disposed in the auxiliary case to connect the sub-circuit board, a display module removably disposed on the auxiliary case. A transparent cap covers the display module and the auxiliary case, and is detachably connected to the auxiliary case.

Abstract: A multi-functional control device includes a casing unit, and press button modules disposed on a main circuit board in the casing unit. Each press button module includes a sub-circuit board connected to the main circuit board, a micro-contact switch mounted on the sub-circuit board, an auxiliary case removably mounted on the micro-contact switch, a driving circuit board removably disposed in the auxiliary case to connect the sub-circuit board, a display module removably disposed on the auxiliary case. A transparent cap covers the display module and the auxiliary case, and is detachably connected to the auxiliary case.

Abstract: A semiconductor device is provided, including a substrate, a seed layer on the substrate, an epitaxial layer on the seed layer, an electrode structure on the epitaxial layer and an electric field modulation structure. The electrode structure includes a gate structure, a source structure and a drain structure, wherein the source structure and the drain structure are positioned on opposite sides of the gate structure. The electric field modulation structure includes an electric connection structure and a conductive layer electrically connected to the electric connection structure. The conductive layer is positioned between the gate structure and the drain structure. The electric connection structure is electrically connected to the source structure and the drain structure.

Abstract: A package structure is provided. The package structure includes a die, a lead frame, and a conductive glue. The lead frame includes a die pad and a retaining wall structure. The die pad is configured to support the die, and the retaining wall structure surrounds the die. The conductive glue is disposed between the die and the lead frame.

Abstract: A high electron mobility transistor includes a channel layer, a barrier layer, a first compound semiconductor layer, and a second compound semiconductor layer. The channel layer is disposed on the substrate, and the barrier layer is disposed on the channel layer. The first compound semiconductor layer is disposed on the barrier layer. The second compound semiconductor layer is disposed between the barrier layer and the first compound semiconductor layer, where the first compound semiconductor layer and the second compound semiconductor layer include a concentration distribution of metal dopant, and the concentration distribution of metal dopant includes a first peak in the first compound semiconductor layer and a second peak in the second compound semiconductor layer.

Abstract: Methods are provided for treatment of several conditions of one or more body features, where the method comprises implanting an acellular soft tissue-derived matrix in, on, proximate to, or a combination thereof, the body feature, wherein the acellular soft tissue-derived matrix comprises a delipidated, decellularized adipose matrix. The delipidated, decellularized adipose tissue matrix is produced by delipidating an adipose tissue sample, followed by decellularizing the delipidated adipose tissue sample. The resulting matrix contains a proportion of lipids which is less than the proportion of lipids contained in a matrix produced by decellularizing an adipose tissue sample prior to delipidating. The delipidated, decellularized adipose matrix may be provided as particles, a slurry, a paste, a gel, an injectable form, or in some other form.

Abstract: An apparatus and a method for forming alignment marks are disclosed. The method for forming alignment marks is a photolithography-free process and includes the following operations. A laser beam is provided. The laser beam is divided into a plurality of laser beams separated from each other. The plurality of laser beams is shaped into a plurality of patterned beams, so that the plurality of patterned beams is shaped with patterns corresponding to alignment marks. The plurality of patterned beams is projected onto a semiconductor wafer.

Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: A semiconductor substrate is provided. The semiconductor substrate includes a ceramic base, a seed layer, and a nucleation layer. The ceramic base has a front surface and a back surface, and the front surface is a non-flat surface. The seed layer is disposed on the front surface of the ceramic substrate. The nucleation layer is disposed on the seed layer.

Abstract: A sensing device is provided in the present invention. The sensing device includes a first conductive element, a second conductive element, a processing unit, a cover and a base. The processing electrically connects to the first conductive element and the second conductive element. The cover has an opening. The base forms a space with the cover, and the first conductive element and the second conductive element are set on the base.

Abstract: Aspects of the disclosure provide an electronic device. The electronic device can include transceiver circuitry and processing circuitry. The transceiver circuitry can be configured to receive signals from wireless service provider networks. The processing circuitry can be configured to detect, from the signals, a high speed rail (HSR) signature of one of the wireless service provider networks. The HSR signature can indicate that the one of the wireless service provider networks is a first network for a high speed rail usage. The processing circuitry can also be configured to determine a mobility of the electronic device based on the signals in a time duration. Further, the processing circuitry can be configured to selectively camp on a first cell of the first network based on the mobility of the electronic device.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: Decellularized muscle matrices are provided for use as implants and grafts to repair, regenerate, supplement, reinforce and replace muscle tissue. The decellularized muscle matrices are derived from muscle tissue having preserved extracellular matrix components, retained muscle-forming potential, and from which immunogenic components have been removed. The decellularized muscle matrices are produced in various physical forms and combinations. Methods for making and using the decellularized muscle matrices are also provided.

Abstract: A photographing optical lens assembly includes seven lens elements, the seven lens elements are, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element, wherein the first lens element has positive refractive power, the fifth lens element with negative refractive power has image-side surface being concave in a paraxial region thereof, the sixth lens element has an image-side surface being convex in a paraxial region thereof, and the seventh lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface of the seventh lens element includes at least one convex critical point in an off-axis region thereof.

Abstract: A semiconductor device includes a substrate and a first III-V compound layer disposed on the substrate. The first III-V compound layer includes a plurality of crystal lattices, each of which has a prism plane. The semiconductor device further includes a second III-V compound layer disposed on the first III-V compound layer. The semiconductor device includes a source electrode, a drain electrode and a gate electrode disposed on the second III-V compound layer. The source electrode and the drain electrode define a channel region that has a plurality of channels of charge carriers in the first III-V compound layer. The normal direction of the prism plane defines an m-axis, and each of the channels of the charge carriers is parallel with the m-axis.