Patents by Inventor Yen-Chen Chen

Yen-Chen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210160753
    Abstract: Aspects of the disclosure provide an electronic device. The electronic device can include transceiver circuitry and processing circuitry. The transceiver circuitry can be configured to receive signals from wireless service provider networks. The processing circuitry can be configured to detect, from the signals, a high speed rail (HSR) signature of one of the wireless service provider networks. The HSR signature can indicate that the one of the wireless service provider networks is a first network for a high speed rail usage. The processing circuitry can also be configured to determine a mobility of the electronic device based on the signals in a time duration. Further, the processing circuitry can be configured to selectively camp on a first cell of the first network based on the mobility of the electronic device.
    Type: Application
    Filed: May 15, 2018
    Publication date: May 27, 2021
    Applicant: MEDIATEK SINGAPORE PTE. LTD.
    Inventors: Jianwei ZHANG, Yen-Chen CHEN, Yuanyuan ZHANG, Yih-Shen CHEN, Chi-Yuan PENG
  • Publication number: 20210126131
    Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
    Type: Application
    Filed: January 3, 2021
    Publication date: April 29, 2021
    Inventors: Chien-Ming Lai, Yen-Chen Chen, Jen-Po Huang, Sheng-Yao Huang, Hui-Ling Chen, Qinggang Xing, Ding-Lung Chen, Li Li Ding, Yao-Hung Liu
  • Patent number: 10805149
    Abstract: The method includes the steps of: a) creating a high availability (HA) network equipment cluster and network connection and assigning a virtual destination IP address (VIP address); b) defining an operating device and a backup device in the HA network equipment cluster, wherein the operating device and the backup device have respective physical addresses (MAC addresses); c) disposing a packet detection controller in the backup device; d) informing the operating device when the packet detection controller detects a packet with the VIP address as a destination; and e) the operating device announcing an ARP (Address Resolution Protocol) broadcast packet with correspondence of the VIP address and its own MAC address to drive an external network device with wrong ARP correspondence to make ARP update.
    Type: Grant
    Filed: December 25, 2018
    Date of Patent: October 13, 2020
    Assignee: ITEX INTERNATIONAL INC.
    Inventors: Chao-Jen Liu, Yen-Chen Chen
  • Publication number: 20200264442
    Abstract: A light projector including a light source, a beam multiplication film, and a tunable wave plate is provided. The light source is configured to emit a light beam. The beam multiplication film is disposed on a transmission path of the light beam and made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the beam multiplication film. The tunable wave plate is disposed on transmission paths of the separated light beams from the beam multiplication film and configured to modulate the separated light beams.
    Type: Application
    Filed: May 6, 2020
    Publication date: August 20, 2020
    Applicant: LIQXTAL TECHNOLOGY INC.
    Inventors: Hung-Shan Chen, Yen-Chen Chen
  • Patent number: 10731976
    Abstract: An optical sensing device configured to detect an object or features of the object is provided. The optical sensing device includes a structured light projector and a sensor. A structured light projector is configured to project a structured light to the object and includes a light source and at least one tunable liquid crystal diffractive optical element (LCDOE). The light source is configured to emit a light beam. The at least one tunable LCDOE is disposed on a path of the light beam and configured to convert the light beam into the structured light to form a structured light pattern on the object. The LCDOE is capable of controlling the structured light pattern by controlling voltage distribution to a liquid crystal layer in the LCDOE. The sensor is configured to sense a reflected light formed by the object reflecting the structured light. Besides, a structured light projector is also provided.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: August 4, 2020
    Assignee: LIQXTAL TECHNOLOGY INC.
    Inventors: Hung-Shan Chen, Yen-Chen Chen
  • Publication number: 20200228764
    Abstract: A tunable light projector including a light source, a fixed optical phase modulator, and a tunable liquid crystal panel is provided. The light source is configured to emit a light beam, and the fixed optical phase modulator is disposed on a path of the light beam and configured to modulate phases of the light beam. The tunable liquid crystal panel is disposed on the path of the light beam and configured to be switched between a plurality of states, wherein the plurality of states include a lens array state in which the tunable liquid crystal panel comprises a lens array.
    Type: Application
    Filed: April 1, 2020
    Publication date: July 16, 2020
    Applicant: LIQXTAL TECHNOLOGY INC.
    Inventors: Yen-Chen Chen, Hung-Shan Chen
  • Patent number: 10670630
    Abstract: A probe card device and a rectangular probe are provided. The rectangular probe includes a metallic pin, an insulating film, and an insulating latch. The metallic pin includes a connecting portion, a detecting portion, and a middle segment arranged between the connecting portion and the detecting portion. The insulating film covers entirely outer surfaces of the middle segment. The insulating latch is in a ring shape and is arranged around at least part of the insulating film. A bottom of the insulating latch is arranged adjacent to the detecting portion. A length of the insulating latch is less than or equal to that of the insulating film, and a thickness of the insulating latch is larger than that of the insulating film and is at least 10 ?m.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: June 2, 2020
    Assignee: CHUNGHWA PRECISION TEST TECH. CO., LTD.
    Inventors: Chih-Peng Hsieh, Yen-Chen Chen, Wei-Jhih Su
  • Publication number: 20200111149
    Abstract: An information recommendation system and method of the present invention provide a user interface for the user to operate and thereby to generate some confirmation signals. A processing unit calculates recommendation parameters respectively based on aforesaid confirmation signals which includes a temperature confirmation signal, a physique confirmation signal, a residence confirmation signal, and a wearing habit confirmation signal. In another word, the generation of the recommendation information is based on the user's residence temperature and climate as well as the user's physique and wearing habits, and in particular, by further calculating on every recommendation parameters. Therefore, the products recommended by the recommendation information can better match the user's residence and habits whereby increasing the product fitness and decreasing the chances of waste due to unfitness.
    Type: Application
    Filed: April 3, 2019
    Publication date: April 9, 2020
    Inventor: Yen-Chen CHEN
  • Patent number: 10613117
    Abstract: A rectangular probe of a probe card device includes an upper positioned segment, an upper contacting segment, a deformable segment, a lower positioned segment, and a lower contacting segment. The upper positioned segment includes an offset portion, a first positioned portion extending from the offset portion along a first direction, and a second positioned portion extending from a second direction being parallel to and opposite to the first direction. In a width direction perpendicular to the first direction, a width of the first positioned portion is 25%-95% of a width of the offset portion, and a width of the second positioned portion is 25%-95% of the width of the offset portion. The upper contacting segment extends from the first positioned portion along the first direction. The deformable segment, the lower positioned segment, and the lower contacting segment sequentially extend from the second positioned portion along the second direction.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: April 7, 2020
    Assignee: CHUNGHWA PRECISION TEST TECH CO., LTD.
    Inventors: Yen-Chen Chen, Wei-Jhih Su, Chih-Peng Hsieh
  • Patent number: 10605830
    Abstract: A probe card device and a rectangular probe thereof are provided. The rectangular probe includes a branch segment, a first contacting segment and a second contacting segment. The branch segment is ring-shaped and has a perforation, and the branch segment includes two branch arms respectively located at two sides of the perforation. The first contacting segment is located at a side of the branch segment and is pierced through a first through hole of a first guide plate. The second contacting segment is located at the other side of the branch segment. A maximum width portion of the branch segment has a variable width greater than a hole size of the first through hole, and the two branch arms of the branch segment are compressible to enable the variable width to be less than or equal to the hole size of the first through hole.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: March 31, 2020
    Assignee: CHUNGHWA PRECISION TEST TECH. CO., LTD.
    Inventors: Chih-Peng Hsieh, Yen-Chen Chen, Wei-Jhih Su
  • Publication number: 20200097789
    Abstract: An inductive comforter has a comforter body and an inductive assembly. The inductive assembly is mounted on the comforter body and includes an inductive chip readable by a sensor. Therefore, as the inductive comforter is free from worn-off bar code or QR code, the inductive comforter will not become unreadable after use over a long time. Moreover, by using a sensor to read an inductive chip, no mechanical or optical contact between the sensor and the inductive chip is needed. Thus, the inductive chip is still readable even if the comforter has been folded and the chip has been covered. Therefore, the personnel's data-reading efficiency will be highly improved.
    Type: Application
    Filed: May 20, 2019
    Publication date: March 26, 2020
    Inventor: Yen Chen Chen
  • Publication number: 20200083380
    Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
    Type: Application
    Filed: October 8, 2018
    Publication date: March 12, 2020
    Inventors: Chien-Ming Lai, Yen-Chen Chen, Jen-Po Huang, Sheng-Yao Huang, Hui-Ling Chen, Qinggang Xing, Ding-Lung Chen, Li Li Ding, Yao-Hung Liu
  • Publication number: 20200006514
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Application
    Filed: September 4, 2019
    Publication date: January 2, 2020
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Patent number: 10510549
    Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.
    Type: Grant
    Filed: December 25, 2017
    Date of Patent: December 17, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shouguo Zhang, Hai Tao Liu, Ming Hua Du, Yen-Chen Chen
  • Patent number: 10490643
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: November 26, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Yun-Tzu Chang, Wei-Ming Hsiao, Nien-Ting Ho, Shih-Min Chou, Yang-Ju Lu, Ching-Yun Chang, Yen-Chen Chen, Kuan-Chun Lin, Chi-Mao Hsu
  • Publication number: 20190324057
    Abstract: A rectangular probe of a probe card device includes an upper positioned segment, an upper contacting segment, a deformable segment, a lower positioned segment, and a lower contacting segment. The upper positioned segment includes an offset portion, a first positioned portion extending from the offset portion along a first direction, and a second positioned portion extending from a second direction being parallel to and opposite to the first direction. In a width direction perpendicular to the first direction, a width of the first positioned portion is 25%-95% of a width of the offset portion, and a width of the second positioned portion is 25%-95% of the width of the offset portion. The upper contacting segment extends from the first positioned portion along the first direction. The deformable segment, the lower positioned segment, and the lower contacting segment sequentially extend from the second positioned portion along the second direction.
    Type: Application
    Filed: July 16, 2018
    Publication date: October 24, 2019
    Inventors: YEN-CHEN CHEN, WEI-JHIH SU, CHIH-PENG HSIEH
  • Patent number: 10446689
    Abstract: An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: October 15, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jen-Po Huang, Chien-Ming Lai, Yen-Chen Chen, Sheng-Yao Huang, Hui-Ling Chen, Seng Wah Liau, Han Chuan Fang
  • Patent number: 10446688
    Abstract: An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: October 15, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jen-Po Huang, Chien-Ming Lai, Yen-Chen Chen, Sheng-Yao Huang, Hui-Ling Chen, Seng Wah Liau, Han Chuan Fang
  • Publication number: 20190267492
    Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Applicant: United Microelectronics Corp.
    Inventors: Yen-Chen Chen, Xiao Wu, Hai Tao Liu, Ming Hua Du, Shouguo Zhang, Yao-Hung Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Publication number: 20190227101
    Abstract: The present disclosure discloses a probe card device and a rectangular probe. The rectangular probe includes a metallic pin, an insulating film, and an insulating latch. The metallic pin includes a connecting portion, a detecting portion, and a middle segment arranged between the connecting portion and the detecting portion. The insulating film covers entirely outer surfaces of the middle segment. The insulating latch is in a ring shape and is arranged around at least part of the insulating film. A bottom of the insulating latch is arranged adjacent to the detecting portion. A length of the insulating latch is less than or equal to that of the insulating film, and a thickness of the insulating latch is larger than that of the insulating film and is at least 10 ?m.
    Type: Application
    Filed: March 20, 2018
    Publication date: July 25, 2019
    Inventors: Chih-Peng Hsieh, Yen-Chen Chen, Wei-Jhih Su