Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: An embodiment of the invention provides a communication apparatus comprising a radio transceiver and a modem processor. The radio transceiver is configured to transmit or receive wireless signals in a wireless network. The modem processor is coupled to the radio transceiver and configured to perform operations comprising: dividing a tracking reference signal (TRS) set into a plurality of TRS subsets; scheduling a first part of the plurality of TRS subsets for a beam management; and scheduling a second part of the plurality of TRS subsets for a synchronization.

Abstract: A method for bandwidth allocation is to be implemented by a base station (BS) that communicates with a plurality of reconfigurable intelligent surfaces (RISs). The method comprising steps of: receiving a plurality of join messages respectively from a plurality of user equipments (UEs) via the RISs, the join messages being transmitted simultaneously by the UEs in a contention area according to a map message; and according to the join messages, grouping the UEs into at least one group by allocating a frequency band within the contention area to each of the at least one group, wherein those of the UEs in the same group share the same frequency band.

Abstract: Apparatus and methods are provided for determining AR filter coefficient and numbers of synchronization. In one novel aspect, the AR filter coefficient and times of synchronization are determined based on the temperatures of the oscillator. In one embodiment, the UE determines a temperature drift rate by collecting sets of temperatures before and after the UE in the sleep mode of the CDRX, generates one or more threshold look-up tables and performs an optimization selection based on the temperature drift rate and the one or more threshold of look-up tables, wherein the optimization selection comprising selecting an alpha coefficient and a number of subframes for synchronization. In another embodiment, the optimization selection is further determined based on a subcarrier spacing, and a channel type of being a static channel type and a fading channel type. The UE further performs an on-the-fly oscillator S-curve calibration based on the set of temperatures.

Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: A device to control the charging or cessation of charging a robot battery is installed in a robot. The device for autonomous charging battery includes the robot battery, a charging mechanism, a relay, a first controller, and a second controller. The relay is electrically connected with the charging mechanism and the first controller, the battery is electrically connected with the charging mechanism, the second controller communicates with the first controller, and the charging mechanism is used for electrically connecting an external charging device. The second controller is configured to receive the robot control command and output the relay control command to the first controller based on the robot control command. The first controller is configured to switch the relay on or off based on the control command to control charging or cessation of charging. A method of autonomous charging battery is also provided.

Abstract: A device for substituting a spent battery with a fully charged battery in AGV and AMR robots and recharging the spent battery includes a supporting assembly, a detection assembly, a driving assembly, and a locking assembly. The supporting assembly 10 carries a battery. The driving assembly drives the battery to move into a position in the supporting assembly according to signals of the detection assembly and the locking assembly, to complete automatic replacement and installation process of the fresh battery. Battery replacement and installation process can be completed automatically, work efficiency is improved, and labor intensity of staff is reduced.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receives a target SSB from a base station. The UE obtains received data carried in a broadcast channel of the target SSB. The UE reconstructs, based on received data carried in a broadcast channel of a previously received SSB, transmitted data placed in the broadcast channel of the target SSB at the base station. The UE preforms a channel estimation and/or synchronization based on a comparison of the received data and the transmitted data of the target SSB.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: A tunable light projector including a light source, a fixed optical phase modulator, and a tunable liquid crystal panel is provided. The light source is configured to emit a light beam, and the fixed optical phase modulator is disposed on a path of the light beam and configured to modulate phases of the light beam. The tunable liquid crystal panel is disposed on the path of the light beam and configured to be switched between a plurality of states, wherein the plurality of states include a lens array state in which the tunable liquid crystal panel comprises a lens array.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A database system includes a master server, a pair of slave servers and a main storage carrier. Each slave server is provided with a database management system (DBMS). The main storage carrier and the pair of slave servers uses the ISCSI protocol to make the pair of slave servers serving as the DBMS and the main storage carrier serving as a database (DB) connect and communicate to further make the DBMS and the DB independent and separate. The master server performs service assignment to the pair of slave servers according to a predetermined weight value. All connections of the database are directed to the slave server with a high weight value, and the other slave server with a low weight value serves as a standby.

Abstract: A database system includes a master server, a pair of slave servers and a main storage carrier. Each slave server is provided with a database management system (DBMS). The main storage carrier and the pair of slave servers uses the ISCSI protocol to make the pair of slave servers serving as the DBMS and the main storage carrier serving as a database (DB) connect and communicate to further make the DBMS and the DB independent and separate. The master server performs service assignment to the pair of slave servers according to a predetermined weight value. All connections of the database are directed to the slave server with a high weight value, and the other slave server with a low weight value serves as a standby.

Abstract: An information recommendation system and method of the present invention provide a user interface for the user to operate and thereby to generate some confirmation signals. A processing unit calculates recommendation parameters respectively based on aforesaid confirmation signals which includes a temperature confirmation signal, a physique confirmation signal, a residence confirmation signal, and a wearing habit confirmation signal. In another word, the generation of the recommendation information is based on the user's residence temperature and climate as well as the user's physique and wearing habits, and in particular, by further calculating on every recommendation parameters. Therefore, the products recommended by the recommendation information can better match the user's residence and habits whereby increasing the product fitness and decreasing the chances of waste due to unfitness.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receives, from a first base station, a data transmission on a first cell using a first RAT. The UE determines a CRS transmission using a second RAT on a second cell from a second base station. The UE determines that the CRS transmission on the second cell interferes with receiving the data transmission on the first cell at the UE. The UE applies an interference cancellation on the first cell to mitigate an interference from the CRS transmission on the second cell to the data transmission on the first cell.

Abstract: A light projector including a light source, a beam multiplication film, and a tunable wave plate is provided. The light source is configured to emit a light beam. The beam multiplication film is disposed on a transmission path of the light beam and made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the beam multiplication film. The tunable wave plate is disposed on transmission paths of the separated light beams from the beam multiplication film and configured to modulate the separated light beams.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A temperature correction method is provided for detecting a temperature of a computer device that includes a first ambient temperature sensor and a second ambient temperature sensor that are spaced apart from each other, and a fan module. When a temperature difference between the temperatures sensed by the first and second ambient temperature sensors is greater than a predetermined threshold value, a controller of the computer device performs temperature correction that is related to the temperature difference, a fan speed of the fan module, and at least one of the sensed temperatures.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.