Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: An electronic assembly is provided, including a wiring board, a control element, and a pair of first internal electrical connectors. The wiring board includes a mounting surface, a first patterned conductive layer, a plurality of second patterned conductive layers, a plurality of near conductive holes, a plurality of far conductive holes, and a first conductive path. The first patterned conductive layer is located between the mounting surface and the second patterned conductive layers. The control element is mounted on the mounting surface of the wiring board. The pair of first internal electrical connectors are mounted on the mounting surface of the wiring board, and are adapted for mounting a pair of memory modules. The first conductive path extends from the control element at least through the corresponding second patterned conductive layer and the first patterned conductive layer to the pair of first internal electrical connectors.

Abstract: An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Abstract: Aspects of the disclosure provide an electronic device. The electronic device can include transceiver circuitry and processing circuitry. The transceiver circuitry can be configured to receive signals from wireless service provider networks. The processing circuitry can be configured to detect, from the signals, a high speed rail (HSR) signature of one of the wireless service provider networks. The HSR signature can indicate that the one of the wireless service provider networks is a first network for a high speed rail usage. The processing circuitry can also be configured to determine a mobility of the electronic device based on the signals in a time duration. Further, the processing circuitry can be configured to selectively camp on a first cell of the first network based on the mobility of the electronic device.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: An electronic assembly is provided, including a wiring board, a control element, and a pair of first internal electrical connectors. The wiring board includes a mounting surface, a first patterned conductive layer, a plurality of second patterned conductive layers, a plurality of near conductive holes, a plurality of far conductive holes, and a first conductive path. The first patterned conductive layer is located between the mounting surface and the second patterned conductive layers. The control element is mounted on the mounting surface of the wiring board. The pair of first internal electrical connectors are mounted on the mounting surface of the wiring board, and are adapted for mounting a pair of memory modules. The first conductive path extends from the control element at least through the corresponding second patterned conductive layer and the first patterned conductive layer to the pair of first internal electrical connectors.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: An electronic assembly is provided, including a wiring board, a control element, and a pair of first internal electrical connectors. The wiring board includes a mounting surface, an outer patterned conductive layer, a plurality of inner patterned conductive layers, a plurality of near conductive holes, a plurality of far conductive holes, and a first conductive path. The outer patterned conductive layer is located between the mounting surface and the inner patterned conductive layers. The control element is mounted on the mounting surface of the wiring board. The pair of first internal electrical connectors are mounted on the mounting surface of the wiring board, and are adapted for mounting a pair of memory modules.

Abstract: Aspects of the disclosure provide an electronic device. The electronic device can include transceiver circuitry and processing circuitry. The transceiver circuitry can be configured to receive signals from wireless service provider networks. The processing circuitry can be configured to detect, from the signals, a high speed rail (HSR) signature of one of the wireless service provider networks. The HSR signature can indicate that the one of the wireless service provider networks is a first network for a high speed rail usage. The processing circuitry can also be configured to determine a mobility of the electronic device based on the signals in a time duration. Further, the processing circuitry can be configured to selectively camp on a first cell of the first network based on the mobility of the electronic device.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: The method includes the steps of: a) creating a high availability (HA) network equipment cluster and network connection and assigning a virtual destination IP address (VIP address); b) defining an operating device and a backup device in the HA network equipment cluster, wherein the operating device and the backup device have respective physical addresses (MAC addresses); c) disposing a packet detection controller in the backup device; d) informing the operating device when the packet detection controller detects a packet with the VIP address as a destination; and e) the operating device announcing an ARP (Address Resolution Protocol) broadcast packet with correspondence of the VIP address and its own MAC address to drive an external network device with wrong ARP correspondence to make ARP update.

Abstract: A light projector including a light source, a beam multiplication film, and a tunable wave plate is provided. The light source is configured to emit a light beam. The beam multiplication film is disposed on a transmission path of the light beam and made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the beam multiplication film. The tunable wave plate is disposed on transmission paths of the separated light beams from the beam multiplication film and configured to modulate the separated light beams.

Abstract: An optical sensing device configured to detect an object or features of the object is provided. The optical sensing device includes a structured light projector and a sensor. A structured light projector is configured to project a structured light to the object and includes a light source and at least one tunable liquid crystal diffractive optical element (LCDOE). The light source is configured to emit a light beam. The at least one tunable LCDOE is disposed on a path of the light beam and configured to convert the light beam into the structured light to form a structured light pattern on the object. The LCDOE is capable of controlling the structured light pattern by controlling voltage distribution to a liquid crystal layer in the LCDOE. The sensor is configured to sense a reflected light formed by the object reflecting the structured light. Besides, a structured light projector is also provided.

Abstract: A tunable light projector including a light source, a fixed optical phase modulator, and a tunable liquid crystal panel is provided. The light source is configured to emit a light beam, and the fixed optical phase modulator is disposed on a path of the light beam and configured to modulate phases of the light beam. The tunable liquid crystal panel is disposed on the path of the light beam and configured to be switched between a plurality of states, wherein the plurality of states include a lens array state in which the tunable liquid crystal panel comprises a lens array.

Abstract: A probe card device and a rectangular probe are provided. The rectangular probe includes a metallic pin, an insulating film, and an insulating latch. The metallic pin includes a connecting portion, a detecting portion, and a middle segment arranged between the connecting portion and the detecting portion. The insulating film covers entirely outer surfaces of the middle segment. The insulating latch is in a ring shape and is arranged around at least part of the insulating film. A bottom of the insulating latch is arranged adjacent to the detecting portion. A length of the insulating latch is less than or equal to that of the insulating film, and a thickness of the insulating latch is larger than that of the insulating film and is at least 10 ?m.

Abstract: An information recommendation system and method of the present invention provide a user interface for the user to operate and thereby to generate some confirmation signals. A processing unit calculates recommendation parameters respectively based on aforesaid confirmation signals which includes a temperature confirmation signal, a physique confirmation signal, a residence confirmation signal, and a wearing habit confirmation signal. In another word, the generation of the recommendation information is based on the user's residence temperature and climate as well as the user's physique and wearing habits, and in particular, by further calculating on every recommendation parameters. Therefore, the products recommended by the recommendation information can better match the user's residence and habits whereby increasing the product fitness and decreasing the chances of waste due to unfitness.