Abstract: An electronic device including a display panel and a CPU is provided. The display panel updates displayed images at a refresh rate. The CPU implements a latency monitor, a system resource controller, a display controller, and an application. The latency monitor collects time information related to touch latency. The touch latency is the duration between the time point at which the display panel detects a touch event and the time point at which the display panel displays an image generated by the application in response to said touch event. The display controller informs the system resource controller of the refresh rate. The system resource controller adjusts the resource allocation of the electronic device to cause the touch latency to be lower than a threshold, according to the time information and the refresh rate.

Abstract: A gas dispenser utilized in a deposition apparatus is provided. The gas dispenser includes a showerhead comprising a plurality of holes, and a mask layer formed on a surface of the showerhead, wherein the holes penetrate through the mask layer. A deposition apparatus using the gas dispenser is also disclosed.

Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

Abstract: A device includes first and second gate electrodes, a word line and a first metal island. The first gate electrode corresponds to transistors of a memory cell. The second gate electrode is separated from the first gate electrode and corresponds to the transistors. The word line is coupled to the memory cell and located between the first and the second gate electrodes. The first metal island is configured to couple a first power supply to the memory cell. A first boundary of the first metal island is located between first and second boundaries of the first gate electrode and is located between first and second boundaries of the word line, and each of the first boundary of the first gate electrode and the first boundary of the word line is located between first and second boundaries of the first metal island.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varies at different heights along the side of the photodiode.

Abstract: An integrated circuit includes a front-side horizontal conducting line and a front-side vertical conducting line at the front side of the substrate, a transistor in a semiconductor structure at the front side of the substrate, and a backside conducting line at a backside of the substrate. The front-side horizontal conducting line is directly connected to a first terminal of the transistor through a front-side terminal via-connector and directly connected to the front-side horizontal conducting line through a front-side metal-to-metal via-connector. A word connection line directly is connected to a gate terminal of the transistor through a gate via-connector. The backside conducting line is directly connected to a second terminal of the transistor through a backside terminal via-connector. In the integrated circuit, a front-side fuse element is conductively connected to either the front-side vertical conducting line or the front-side horizontal conducting line.

Abstract: An integrated circuit includes a transistor formed in a semiconductor structure, a front-side horizontal conducting line in a first metal layer above the semiconductor structure, and a front-side vertical conducting line in a second metal layer above the first metal layer. The front-side horizontal conducting line is directly connected to a first terminal of the transistor, and the front-side vertical conducting line is directly connected to the front-side horizontal conducting line. In the integrated circuit, a front-side fuse element is conductively connected to the front-side vertical conducting line, and a backside conducting line is directly connected to a second terminal of the transistor. A word connection line extending in the first direction is directly connected to a gate terminal of the transistor.

Abstract: An IC includes a device-under-test (DUT) configured to receive a first AC signal at a first node and output a second AC signal at a second node, the second AC signal being based on the first AC signal, and first and second detection circuits. Each of the first and second detection circuits includes a first gain stage coupled to a corresponding one of the first or second nodes through a first capacitive device, a second gain stage in a cascade arrangement with the first gain stage, and a low-pass filter configured to generate a DC signal based on an output signal of the second gain stage.

Abstract: A testing system includes: a dividing circuit configured to receive a testing signal and provide a plurality of input signals according to the testing signal; and a plurality of integrated power-amplifiers coupled to the dividing circuit, each of the plurality of integrated power-amplifiers being configured to be tested by receiving a respective input signal of the plurality of input signals and generating a respective output signal for a predetermined testing time.

Abstract: A testing system includes: a dividing circuit configured to receive a testing signal and provide a plurality of input signals according to the testing signal; and a plurality of power-amplifier chips coupled to the dividing circuit, each of the plurality of power-amplifier chips being configured to be tested by receiving a respective input signal of the plurality of input signals and generating a respective output signal for a predetermined testing time.

Abstract: An integrated circuit includes a transistor formed in a semiconductor structure, a front-side horizontal conducting line in a first metal layer above the semiconductor structure, and a front-side vertical conducting line in a second metal layer above the first metal layer. The front-side horizontal conducting line is directly connected to a first terminal of the transistor, and the front-side vertical conducting line is directly connected to the front-side horizontal conducting line. In the integrated circuit, a front-side fuse element is conductively connected to the front-side vertical conducting line, and a backside conducting line is directly connected to a second terminal of the transistor. A word connection line extending in the first direction is directly connected to a gate terminal of the transistor.

Abstract: An integrated circuit includes a front-side horizontal conducting line in a first metal layer, a front-side vertical conducting line in a second metal layer, a front-side fuse element, and a backside conducting line. The front-side horizontal conducting line is directly connected to the drain terminal-conductor of a transistor through a front-side terminal via-connector. The front-side vertical conducting line is directly connected to the front-side horizontal conducting line through a front-side metal-to-metal via-connector. The front-side fuse element having a first fuse terminal conductively connected to the front-side vertical conducting line. The backside conducting line is directly connected to the source terminal-conductor of the transistor through a backside terminal via-connector.

Abstract: An IC includes a device-under-test (DUT) configured to receive a first AC signal at a first node and output a second AC signal at a second node, the second AC signal being based on the first AC signal, and first and second detection circuits. Each of the first and second detection circuits includes a first gain stage coupled to a corresponding one of the first or second nodes through a first capacitive device, a second gain stage in a cascade arrangement with the first gain stage, and a low-pass filter configured to generate a DC signal based on an output signal of the second gain stage.

Abstract: A composite heat dissipation device includes an electromagnetic radiation dissipation pile including a polar dielectric material assembly including a plurality of polar dielectric material units. The polar dielectric material assembly is configured to interact with solar radiation. Surfaces of the polar dielectric material units each are configured to interact with the solar radiation to generate scattering of light. The polar dielectric material units each include an optical phonon configured to interact with thermal radiation to increase strength of the thermal radiation.

Abstract: An IC includes a plurality of pads at a top surface of a semiconductor wafer, an amplifier configured to receive a first AC signal at an input terminal, and output a second AC signal at an output terminal, a first detection circuit coupled to the input terminal and configured to output a first DC voltage to a first pad of the plurality of pads responsive to the first AC signal, and a second detection circuit coupled to the output terminal and configured to output a second DC voltage to a second pad of the plurality of pads responsive to the second AC signal.

Abstract: An IC includes a plurality of pads at a top surface of a semiconductor wafer, an amplifier configured to receive a first AC signal at an input terminal, and output a second AC signal at an output terminal, a first detection circuit coupled to the input terminal and configured to output a first DC voltage to a first pad of the plurality of pads responsive to the first AC signal, and a second detection circuit coupled to the output terminal and configured to output a second DC voltage to a second pad of the plurality of pads responsive to the second AC signal.

Abstract: A thermal radiation heat dissipation device for an electronic component includes a heat dissipation substrate including a heat dissipation surface having a heat dissipation surface emissivity; and an emissivity modulation layer disposed on the heat dissipation surface including an emissivity modulation layer surface having an emissivity modulation layer surface emissivity. The emissivity modulation layer surface emissivity is greater the heat dissipation surface emissivity.

Abstract: A thermal radiation heat dissipation device includes a radiation heat transfer pile including a plurality of polar dielectric material units of high energy gap, the polar dielectric material units each including at least one light scattering unit and a thermal radiation unit. The light scattering unit interacts with solar radiation to generate scattering of light. The thermal radiation unit interacts with thermal radiation to increase strength of thermal radiation.

Abstract: A composite heat dissipation device includes an electromagnetic radiation dissipation pile including a polar dielectric material assembly including a plurality of polar dielectric material units. The polar dielectric material assembly is configured to interact with solar radiation. Surfaces of the polar dielectric material units each are configured to interact with the solar radiation to generate scattering of light. The polar dielectric material units each include an optical phonon configured to interact with thermal radiation to increase strength of the thermal radiation.

Abstract: An integrated circuit includes a front-side horizontal conducting line in a first metal layer, a front-side vertical conducting line in a second metal layer, a front-side fuse element, and a backside conducting line. The front-side horizontal conducting line is directly connected to the drain terminal-conductor of a transistor through a front-side terminal via-connector. The front-side vertical conducting line is directly connected to the front-side horizontal conducting line through a front-side metal-to-metal via-connector. The front-side fuse element having a first fuse terminal conductively connected to the front-side vertical conducting line. The backside conducting line is directly connected to the source terminal-conductor of the transistor through a backside terminal via-connector.