Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Abstract: The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Abstract: A color-temperature-tunable device comprises a first light emitting diode (LED) chip group comprising at least one first blue LED chip that emits a first light having a first peak wavelength, a second LED chip group comprising at least one second blue LED chip that emits a second light having a second peak wavelength different from the first peak wavelength, and a wavelength converting layer above at least a portion of the first LED chip group and a portion of the second LED chip group. The first LED chip group and the second LED chip group are driven by a first driving current and a second driving current, respectively.

Abstract: A wireless transmission system includes several candidate devices, a wireless transmission interface and a wireless transmission device. The wireless transmission device includes a storage unit, a transmission direction information generating unit -and a processing unit. The processing unit receives the device information of each of the candidate devices from each of the candidate devices respectively through the wireless transmission interface. The processing unit calculates transmission direction range according to the transmission direction information, which is generated through the transmission direction information generating unit. The processing unit selects at least one of the candidate devices, which matches the transmission direction range. Wherein, the selected at least one candidate device is taken as at least one transmission target device.

Abstract: A color-temperature-tunable device comprises a first light emitting diode (LED) chip group comprising at least one first blue LED chip that emits a first light having a first peak wavelength, a second LED chip group comprising at least one second blue LED chip that emits a second light having a second peak wavelength different from the first peak wavelength, and a wavelength converting layer above at least a portion of the first LED chip group and a portion of the second LED chip group. The first LED chip group and the second LED chip group are driven by a first driving current and a second driving current, respectively.

Abstract: An intelligent wall switch comprises an extend operation panel including sensor areas with a first conducting film; a glass on the back sides of the sensor areas including second conducting films; a first circuit board including a backlight LED and an infrared emitter and connected to a flexible cable connected to the second conducting film; a frame on a back side of the glass; a controller system including a second circuit board having an AC-DC power module, relays, AC output connectors, an AC input connector all on a back side thereof, and having a flat cable connector, an infrared receiver, and multiple indicating LEDs all on a front side thereof; a connecting piece and a housing being used to receive the AC-DC power module, the connecting piece being disposed on a back side of the frame, the AC-DC power module being connected to the cable by the flat cable connector.

Abstract: An intelligent wall switch comprises an extend operation panel including sensor areas with a first conducting film; a glass on the back sides of the sensor areas including second conducting films; a first circuit board including a backlight LED and an infrared emitter and connected to a flexible cable connected to the second conducting film; a frame on a back side of the glass; a controller system including a second circuit board having an AC-DC power module, relays, AC output connectors, an AC input connector all on a back side thereof, and having a flat cable connector, an infrared receiver, and multiple indicating LEDs all on a front side thereof; a connecting piece and a housing being used to receive the AC-DC power module, the connecting piece being disposed on a back side of the frame, the AC-DC power module being connected to the cable by the flat cable connector.

Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Abstract: A chip testing device having a plurality of testing units is provided. Each testing unit comprises a selector, a flip-flop unit, a first buffer and a second buffer. The selector is controlled by a control signal and has a first input terminal, a feedback input terminal, and a first output terminal. The flip-flop unit has a second input terminal coupled to the first output terminal, a clock signal input terminal for receiving a reference clock signal, and a second output terminal outputting an output data. The first buffer is coupled to the flip-flop unit to convert the output data to a high voltage data, and outputs the high voltage data. The second buffer is coupled to the first buffer to convert high voltage data to low voltage data and transmit the low voltage data to the feedback input terminal.

Abstract: The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract: The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

Abstract: A manufacturing system for processing a container body into a heat dissipating device includes: a support for supporting the container body thereon; an elastically deformable member covering a periphery of an opening in an upper wall of the container body and defining a cavity in fluid communication with interior of the container body through the opening; a vacuuming device connected to the elastically deformable member for vacuuming the inner space; a working fluid-loading device connected to the elastically deformable member for filling a predetermined amount of the working fluid into the container body; a depressing device including opposite upper and lower pressing members; and a driving mechanism for driving movement of at least one of the upper and lower pressing members.

Abstract: This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.

Abstract: A level shifter including a first boost circuit, an inverter, a second boost circuit and a level shift circuit is disclosed. The first boost circuit receives an input signal, and a first amplification factor for the input signal is determined based on a control signal. The inverter receives the input signal to generate an inverted input signal. The second boost circuit is coupled to an output terminal of the inverter to receive the inverted input signal, and a second amplification factor for the inverted input signal is determined based on the control signal. The level shift circuit has a first input terminal and a second input terminal respectively coupled to output terminals of the first boost circuit and second boost circuit to change the voltage level of output signals from the first boost circuit and second boost circuit to a first voltage level.

Abstract: A multi-level flash memory comprises a semiconductor substrate, a gate structure having a lower block positioned in the semiconductor substrate and an upper block positioned on the semiconductor substrate, and a plurality of storage structures separated by the gate structure. The upper block connects to the lower block of the gate structure, and each of the storage structures includes a charge-trapping site and an insulation structure surrounding the charge-trapping site.

Abstract: A method for preparing a multi-level flash memory comprising the steps of forming a recess in a semiconductor substrate, forming a plurality of storage structures at the sides of the recess, and forming a gate structure having a lower block in the recess and an upper block on the lower block. The storage structures are separated by the gate structure, and each of the storage structures includes a charge-trapping site and an insulation structure surrounding the charge-trapping site.

Abstract: Systems, including compositions and methods, for measuring pH, particularly in cells, organelles, and other samples. The compositions include pH-sensitive fluorescent and fluorogenic 2?,7?-dialkylfluorescein derivatives and associated nonfluorescent precursor compounds. The compositions may permit ratiometric measurement in the excitation spectrum and the emission spectrum. The methods include adding a precursor compound to a sample cell, incubating the sample cell to release the free indicator, illuminating the sample cell, and detecting the fluorescence response of the free indicator.