Patents by Inventor Yen-Wen Lu

Yen-Wen Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11409203
    Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: August 9, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Yu Cao, Yen-Wen Lu, Peng Liu, Rafael C. Howell, Roshni Biswas
  • Patent number: 11379648
    Abstract: A method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: July 5, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Frank Gang Chen, Joseph Werner De Vocht, Yuelin Du, Wanyu Li, Yen-Wen Lu
  • Publication number: 20220179321
    Abstract: A method for training a patterning process model, the patterning process model configured to predict a pattern that will be formed by a patterning process. The method involves obtaining an image data associated with a desired pattern, a measured pattern of the substrate, a first model including a first set of parameters, and a machine learning model including a second set of parameters; and iteratively determining values of the first set of parameters and the second set of parameters to train the patterning process model. An iteration involves executing, using the image data, the first model and the machine learning model to cooperatively predict a printed pattern of the substrate; and modifying the values of the first set of parameters and the second set of parameters such that a difference between the measured pattern and the predicted pattern is reduced.
    Type: Application
    Filed: March 5, 2020
    Publication date: June 9, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Ziyang MA, Jin CHENG, Ya LUO, Leiwu ZHENG, Xin GUO, Jen-Shiang WANG, Yongfa FAN, Feng CHEN, Yi-Yin CHEN, Chenji ZHANG, Yen- Wen LU
  • Patent number: 11353797
    Abstract: A method of controlling a computer process for designing or verifying a photolithographic component includes building a source tree including nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: June 7, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Yen-Wen Lu, Xiaorui Chen, Yang Lin
  • Publication number: 20220121804
    Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.
    Type: Application
    Filed: December 29, 2021
    Publication date: April 21, 2022
    Applicant: ASML NETHERLAND B.V.
    Inventors: Quan Zhang, Been-Der Chen, Rafael C. Howell, Jing Su, Yi Zou, Yen-Wen Lu
  • Patent number: 11232249
    Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: January 25, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Quan Zhang, Been-Der Chen, Rafael C. Howell, Jing Su, Yi Zou, Yen-Wen Lu
  • Publication number: 20210271173
    Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 2, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Yu CAO, Yen-Wen LU, Peng LIU, Rafael C. HOWELL, Roshni BISWAS
  • Publication number: 20210271172
    Abstract: Methods of determining, and using, a process model that is a machine learning model. The process model is trained partially based on simulation or based on a non-machine learning model. The training data may include inputs obtained from a design layout, patterning process measurements, and image measurements.
    Type: Application
    Filed: February 16, 2021
    Publication date: September 2, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Ya Luo, Yu Cao, Jen-Shiang Wang, Yen-Wen Lu
  • Publication number: 20210208507
    Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.
    Type: Application
    Filed: May 14, 2019
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jen-Shiang WANG, Qian Zhao, Yunbo GUO, Yen-Wen LU, Mu FENG, Qiang ZHANG
  • Publication number: 20210208510
    Abstract: A method of controlling a computer process for designing or verifying a photolithographic component includes building a source tree including nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.
    Type: Application
    Filed: November 24, 2017
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Yen-Wen LU, Xiaorui CHEN, Yang LIN
  • Patent number: 11016395
    Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: May 25, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Yu Cao, Yen-Wen Lu, Peng Liu, Rafael C. Howell, Roshni Biswas
  • Patent number: 10996565
    Abstract: A method including: obtaining a characteristic of a portion of a design layout; determining a characteristic of M3D of a patterning device including or forming the portion; and training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and whose supervisory signal includes the characteristic of the M3D. Also disclosed is a method including: obtaining a characteristic of a portion of a design layout; obtaining a characteristic of a lithographic process that uses a patterning device including or forming the portion; determining a characteristic of a result of the lithographic process; training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and the characteristic of the lithographic process, and whose supervisory signal includes the characteristic of the result.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: May 4, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Peng Liu, Ya Luo, Yu Cao, Yen-Wen Lu
  • Patent number: 10948831
    Abstract: Methods of determining, and using, a patterning process model that is a machine learning model. The process model is trained partially based on simulation or based on a non-machine learning model. The training data may include inputs obtained from a design layout, patterning process measurements, and image measurements.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: March 16, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Ya Luo, Yu Cao, Jen-Shiang Wang, Yen-Wen Lu
  • Publication number: 20210048753
    Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.
    Type: Application
    Filed: February 28, 2019
    Publication date: February 18, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Quan ZHANG, Been-Der CHENG, Rafael C. HOWELL, Jing SU, Yi ZOU, Yen-Wen LU
  • Publication number: 20200380362
    Abstract: Methods of training machine learning models related to a patterning process, including a method for training a machine learning model configured to predict a mask pattern. The method including obtaining (i) a process model of a patterning process configured to predict a pattern on a substrate, wherein the process model comprises one or more trained machine learning models, and (ii) a target pattern, and training the machine learning model configured to predict a mask pattern based on the process model and a cost function that determines a difference between the predicted pattern and the target pattern.
    Type: Application
    Filed: February 20, 2019
    Publication date: December 3, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Yu CAO, Ya LUO, Yen-Wen LU, Been-Der CHEN, Rafael C. HOWELL, Yi ZOU, Jing SU, Dezheng SUN
  • Publication number: 20200372201
    Abstract: A method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.
    Type: Application
    Filed: August 14, 2020
    Publication date: November 26, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Frank Gang CHEN, Joseph Werner De Vocht, Yuelin Du, Wanyu Li, Yen-Wen Lu
  • Publication number: 20200356011
    Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.
    Type: Application
    Filed: September 5, 2018
    Publication date: November 12, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jing SU, Yen-Wen LU, Ya LUO
  • Patent number: 10755025
    Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: August 25, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Frank Gang Chen, Joseph Werner De Vocht, Yuelin Du, Wanyu Li, Yen-Wen Lu
  • Publication number: 20200073260
    Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
    Type: Application
    Filed: December 6, 2017
    Publication date: March 5, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Yu CAO, Yen-Wen LU, Peng LIU, Rafael C. HOWELL
  • Publication number: 20200050099
    Abstract: A method including: obtaining a portion of a design layout; determining characteristics of assist features based on the portion or characteristics of the portion; and training a machine learning model using training data including a sample whose feature vector includes the characteristics of the portion and whose label includes the characteristics of the assist features. The machine learning model may be used to determine characteristics of assist features of any portion of a design layout, even if that portion is not part of the training data.
    Type: Application
    Filed: May 4, 2018
    Publication date: February 13, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jing SU, Yi ZOU, Chenxi LIN, Yu CAO, Yen-Wen LU, Been-Der CHEN, Quan ZHANG, Stanislas Hugo Louis BARON, Ya LUO