Abstract: A flexible organic light-emitting diode display and a method of manufacturing the same are disclosed. In one aspect, the display includes a substrate formed of a first material including a metal and an OLED formed over the substrate.

Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.

Abstract: Disclosed herein is a flexible display device, including: a substrate that comprises a first surface and a second surface which is an opposite surface to the first surface; a light-emitting device disposed on the first surface; a reduction layer disposed on the second surface; and a barrier layer disposed between the second surface and the reduction layer.

Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.

Abstract: Disclosed herein is a flexible display device, including: a substrate that comprises a first surface and a second surface which is an opposite surface to the first surface; a light-emitting device disposed on the first surface; a reduction layer disposed on the second surface; and a barrier layer disposed between the second surface and the reduction layer.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract: A flexible organic light-emitting diode display and a method of manufacturing the same are disclosed. In one aspect, the display includes a substrate formed of a first material including a metal and an OLED formed over the substrate.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: Provided is an organic light-emitting display device that includes: a substrate; a first wiring that extends in a first direction on the substrate and comprises first and second portions with an opening therebetween; a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction; an insulating film that covers the first wiring and the second wiring and comprises a first contact hole that exposes the first portion of the first wiring and a second contact hole that exposes the second portion; and a bridge electrode that is formed on the insulating film, is electrically connected to the first and second portions through the first and second contact holes, and comprises a transparent conductive oxide and a metal.

Abstract: Provided is an organic light-emitting display device that includes: a substrate; a first wiring that extends in a first direction on the substrate and comprises first and second portions with an opening therebetween; a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction; an insulating film that covers the first wiring and the second wiring and comprises a first contact hole that exposes the first portion of the first wiring and a second contact hole that exposes the second portion; and a bridge electrode that is formed on the insulating film, is electrically connected to the first and second portions through the first and second contact holes, and comprises a transparent conductive oxide and a metal.

Abstract: There are provided a back plane for a flat panel display and a method of manufacturing the back plane, and more particularly, a back plane for an organic light-emitting display device, which enables front light-emitting, and a method of manufacturing the back plane. The back plane for a flat panel display includes: a substrate; a gate electrode on the substrate; a first capacitor on the substrate, the first capacitor comprising a first electrode, an insulation pattern layer on the first electrode, and a second electrode on the insulation pattern layer; a first insulation layer on the substrate to cover the gate electrode and the first capacitor; an active layer on the first insulation layer to correspond to the gate electrode; and a source electrode and a drain electrode on the substrate to contact a portion of the active layer.

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.

Abstract: A display device and a manufacturing method thereof with improved performance and low manufacturing complexity are provided. One inventive aspect includes: a first control electrode, a semiconductor layer, an etch stop layer, a first input electrode and a first output electrode, a third control electrode, a passivation layer and a pixel electrode. The third control electrode is formed on the etch stop layer. The passivation layer is formed on the first electrode, the first output electrode and the third control electrode. The pixel electrode is formed on the passivation layer and connects to the first output electrode.

Abstract: An organic light-emitting display apparatus includes a substrate. A capacitor is formed on the substrate. The capacitor includes a first lower electrode, a second lower electrode, an upper electrode, a first insulating layer disposed between the first lower electrode and the second lower electrode, and a second insulting layer disposed between the second lower electrode and the upper electrode. A thin film transistor (TFT) includes a gate electrode disposed on a same layer as the first lower electrode, an active layer, and source and drain electrodes disposed on a same layer as the upper electrode. A wiring includes the same material layer as the second lower electrode.

Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.