Abstract: A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween.

Abstract: An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

Abstract: Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1014 to about 1×1018 cm?3.

Abstract: The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.

Abstract: A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

Abstract: An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.

Abstract: A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.

Abstract: A flat panel display capable of preventing a pixel circuit from electrically short-circuiting, and a method of manufacturing the flat panel display are disclosed. In one embodiment, the flat panel display includes an insulating film having an aperture, a pixel electrode having a portion exposed by the aperture of the insulating film, a conductor formed on the insulating film, and a capping layer covering the conductor. According to embodiments of the present invention, the conductor is formed from a conductive paste and the rough surface of the conductive paste is passivated by a capping layer formed on the conductor, and thus, a short circuit between the conductor and an opposing pixel electrode can be prevented.

Abstract: A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.

Abstract: A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.

Abstract: A polysilicon thin film transistor (TFT) may include a substrate, at least one insulating layer, a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a heat retaining layer formed to contact the semiconductor layer. The heat retaining layer may reduce and/or prevent a reduction in a melt duration time of amorphous silicon during a crystallization process for forming a polysilicon layer of the TFT.

Abstract: A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

Abstract: An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.

Abstract: An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

Abstract: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

Abstract: A flat panel display for preventing a thin film transistor from deteriorating due to voltage, static electricity, and external force, accidentally applied to a substrate, and a method for driving the same. The flat panel display includes a conductive substrate, at least one insulating layer formed on the conductive substrate, at least one thin film transistor formed on the conductive substrate, and a ground formed in a region of the conductive substrate to ground the conductive substrate. Thus, the deterioration of the thin film transistor that would be generated by voltage, static electricity, or external force, accidentally applied to the conductive substrate can be substantially prevented and the performance of the display is enhanced.

Abstract: An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

Abstract: A method of manufacturing an electronic apparatus including a plastic substrate, which can facilitate in separating the electronic apparatus including the plastic substrate from a stage, an electronic apparatus manufactured using the method, and an apparatus including the stage for use in the method. The method includes: preparing a stage on which a plurality of island-shaped separation lubricators are arranged; disposing the plastic substrate on the stage; forming a device on the plastic substrate; and separating the plastic substrate from the stage.

Abstract: An organic light emitting display (OLED), which includes a display unit and a controlling unit, is provided. The display unit includes an organic light emission layer and a transparent thin film transistor (TFT) to drive the organic light emission layer, and the display unit emits light into two opposite surfaces (upper and lower surfaces). The controlling unit includes an electro-optical layer that is capable of being switched from one state to another state by applying voltage to the layer. The controlling unit controls transmission of light emitted from the display unit. Therefore the flat panel display of the present invention is capable of displaying an image in one surface or in two surfaces. The selection of surface of image display can be manually or automatically controlled by a user. The controlling unit can includes a liquid crystal device, an electrophoretic device, or an electrochromic device.

Abstract: In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode.