Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract: A display device and a manufacturing method thereof with improved performance and low manufacturing complexity are provided. One inventive aspect includes: a first control electrode, a semiconductor layer, an etch stop layer, a first input electrode and a first output electrode, a third control electrode, a passivation layer and a pixel electrode. The third control electrode is formed on the etch stop layer. The passivation layer is formed on the first electrode, the first output electrode and the third control electrode. The pixel electrode is formed on the passivation layer and connects to the first output electrode.

Abstract: A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.

Abstract: A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween.

Abstract: A thin film transistor includes a gate electrode provided on a substrate, a semiconductor layer insulated from the gate electrode and including indium, tin, zinc and gallium oxide, and source/drain electrodes formed on the semiconductor layer.

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract: A pixel circuit of a flat panel display device and a method for driving thereof are provided.

Abstract: An organic light-emitting display apparatus includes a substrate. A capacitor is formed on the substrate. The capacitor includes a first lower electrode, a second lower electrode, an upper electrode, a first insulating layer disposed between the first lower electrode and the second lower electrode, and a second insulting layer disposed between the second lower electrode and the upper electrode. A thin film transistor (TFT) includes a gate electrode disposed on a same layer as the first lower electrode, an active layer, and source and drain electrodes disposed on a same layer as the upper electrode. A wiring includes the same material layer as the second lower electrode.

Abstract: A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

Abstract: Provided is an organic light-emitting display device that includes: a substrate; a first wiring that extends in a first direction on the substrate and comprises first and second portions with an opening therebetween; a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction; an insulating film that covers the first wiring and the second wiring and comprises a first contact hole that exposes the first portion of the first wiring and a second contact hole that exposes the second portion; and a bridge electrode that is formed on the insulating film, is electrically connected to the first and second portions through the first and second contact holes, and comprises a transparent conductive oxide and a metal.

Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Abstract: There are provided a back plane for a flat panel display and a method of manufacturing the back plane, and more particularly, a back plane for an organic light-emitting display device, which enables front light-emitting, and a method of manufacturing the back plane. The back plane for a flat panel display includes: a substrate; a gate electrode on the substrate; a first capacitor on the substrate, the first capacitor comprising a first electrode, an insulation pattern layer on the first electrode, and a second electrode on the insulation pattern layer; a first insulation layer on the substrate to cover the gate electrode and the first capacitor; an active layer on the first insulation layer to correspond to the gate electrode; and a source electrode and a drain electrode on the substrate to contact a portion of the active layer.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and display device having the TFT of which the TFT includes a metal catalyst layer disposed on a substrate, a semiconductor layer disposed on the metal catalyst layer, a gate insulating layer disposed on the entire surface of the substrate, a gate electrode disposed on the gate insulating layer at a position corresponding to the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes disposed on the interlayer insulating layer and connected to the semiconductor layer, wherein the metal catalyst layer includes one of carbon, nitrogen, and halogen. The thin film transistor includes a poly-Si layer that may be formed to a smaller thickness than in conventional deposition methods thereby producing a TFT in which the remaining amount of metal catalyst in a semiconductor layer is reduced.

Abstract: A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.